SNOSD63 Data sheet

SNOSD63 June 2017 LMH6624-MIL

PRODUCTION DATA.

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Mechanical Data (Package|Pins)

Thermal pad, mechanical data (Package|Pins)

Orderable Information

snosd63_oa

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_IN differential			±1.2	V
Supply voltage (V⁺ – V^–)			13.2	V
Voltage at input pins			V⁺ +0.5, V^– –0.5	V
Input current			±10	mA
Soldering information	Infrared or convection (20 s)		235	°C
Soldering information	Wave soldering (10 s)		260	°C
Junction temperature⁽²⁾			150	°C
Storage temperature		–65	150	°C

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Machine model⁽²⁾	±200	V

(1) Human body model, 1.5 kΩ in series with 100 pF. JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 2000-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.

(2) Machine model, 0 Ω in series with 200 pF. JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Operating temperature⁽²⁾	–40	+125	°C
Operating supply voltage (V+ – V–)	±2.25	±6.3	V

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMH6624-MIL		UNIT
		DBV	D
		5 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance⁽²⁾	265	166	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) The maximum power dissipation is a function of T_J(MAX), R_θJA, and T_A. The maximum allowable power dissipation at any ambient temperature is P_D = (T_J(MAX) – T_A)/ R_θJA . All numbers apply for packages soldered directly onto a PC board.

6.5 Electrical Characteristics ±2.5 V

Unless otherwise specified, all limits ensured at T_A = 25°C, V⁺ = 2.5 V, V^– = –2.5 V, V_CM = 0 V, A_V = +20, R_F = 500 Ω,
R_L = 100 Ω. See ⁽⁹⁾.

PARAMETER		TEST CONDITIONS		MIN⁽⁴⁾	TYP⁽³⁾	MAX⁽⁴⁾	UNIT
DYNAMIC PERFORMANCE
f_CL	–3-dB BW	V_O = 400 mV_PP			90		MHz
SR	Slew rate⁽⁶⁾	V_O = 2 V_PP, A_V = +20			300		V/μs
SR	Slew rate⁽⁶⁾	V_O = 2 V_PP, A_V = +10			360		V/μs
t_r	Rise time	V_O = 400 mV Step, 10% to 90%			4.1		ns
t_f	Fall time	V_O = 400 mV Step, 10% to 90%			4.1		ns
t_s	Settling time 0.1%	V_O = 2 V_PP (Step)			20		ns
DISTORTION and NOISE RESPONSE
e_n	Input referred voltage noise	f = 1 MHz			0.92		nV/√Hz
e_n	Input referred voltage noise	f = 1 MHz			1.0		nV/√Hz
i_n	Input referred current noise	f = 1 MHz			2.3		pA/√Hz
HD2	2^nd harmonic distortion	f_C= 10 MHz, V_O = 1 V_PP, R_L 100 Ω			–60		dBc
HD3	3^rd harmonic distortion	f_C= 10 MHz, V_O = 1 V_PP, R_L 100 Ω			–76		dBc
INPUT CHARACTERISTICS
V_OS	Input offset voltage	V_CM = 0 V		–0.75	–0.25	+0.75	mV
	Input offset voltage	V_CM = 0 V	–40°C ≤ T_J ≤ 125°C	–0.95		+0.95	mV
	Average drift⁽⁵⁾	V_CM = 0 V			±0.25		μV/°C
I_OS	Input offset current	V_CM = 0 V		–1.5	–0.05	+1.5	μA
	Input offset current	V_CM = 0 V	–40°C ≤ T_J ≤ 125°C	–2.0		+2.0	μA
	Average drift⁽⁵⁾	V_CM = 0 V			2		nA/°C
I_B	Input bias current	V_CM = 0 V			13	+20	μA
	Input bias current	V_CM = 0 V	–40°C ≤ T_J ≤ 125°C			+25	μA
	Average drift⁽⁵⁾	V_CM = 0 V			12		nA/°C
R_IN	Input resistance⁽⁷⁾	Common Mode			6.6		MΩ
R_IN	Input resistance⁽⁷⁾	Differential Mode			4.6		kΩ
C_IN	Input capacitance⁽⁷⁾	Common Mode			0.9		pF
C_IN	Input capacitance⁽⁷⁾	Differential Mode			2.0		pF
CMRR	Common-mode rejection ratio	Input referred, V_CM = –0.5 V to +1.9 V		87	90		dB
CMRR	Common-mode rejection ratio	Input referred, V_CM = –0.5 V to +1.75 V	–40°C ≤ T_J ≤ 125°C	85			dB
TRANSFER CHARACTERISTICS
A_VOL	Large signal voltage gain	R_L = 100 Ω, V_O = –1 V to +1 V		75	79		dB
A_VOL	Large signal voltage gain	R_L = 100 Ω, V_O = –1 V to +1 V	–40°C ≤ T_J ≤ 125°C	70			dB
OUTPUT CHARACTERISTICS
V_O	Output swing	R_L = 100 Ω		±1.1	±1.5		V
		R_L = 100 Ω	–40°C ≤ T_J ≤ 125°C	±1.0
		No load		±1.4	±1.7
		No load	–40°C ≤ T_J ≤ 125°C	±1.25
R_O	Output impedance	f ≤ 100 KHz			10		mΩ
I_SC	Output short circuit current	Sourcing to ground ΔV_IN = 200 mV ⁽²⁾⁽⁸⁾		90	145		mA
		Sourcing to ground ΔV_IN = 200 mV ⁽²⁾⁽⁸⁾	–40°C ≤ T_J ≤ 125°C	75
		Sinking to ground ΔV_IN = –200 mV ⁽²⁾⁽⁸⁾		90	145
		Sinking to ground ΔV_IN = –200 mV ⁽²⁾⁽⁸⁾	–40°C ≤ T_J ≤ 125°C	75
I_OUT	Output current	Sourcing, V_O = +0.8 V Sinking, V_O = –0.8 V			100		mA
POWER SUPPLY
PSRR	Power supply rejection ratio	V_S = ±2 V to ±3 V		82	90		dB
PSRR	Power supply rejection ratio	V_S = ±2 V to ±3 V	–40°C ≤ T_J ≤ 125°C	80			dB
I_S	Supply current (per channel)	No load			11.4	16	mA
I_S	Supply current (per channel)	No load	–40°C ≤ T_J ≤ 125°C			18	mA

6.6 Electrical Characteristics ±6 V

Unless otherwise specified, all limits ensured at T_A = 25°C, V⁺ = 6 V, V^– = –6 V, V_CM = 0 V, A_V = +20, R_F = 500 Ω,
R_L = 100 Ω. See ⁽⁹⁾.

PARAMETER		TEST CONDITIONS		MIN⁽⁴⁾	TYP⁽³⁾	MAX⁽⁴⁾	UNIT
DYNAMIC PERFORMANCE
f_CL	–3-dB BW	V_O = 400 mV_PP			95		MHz
SR	Slew rate⁽⁶⁾	V_O = 2 V_PP, A_V = +20			350		V/μs
SR	Slew rate⁽⁶⁾	V_O = 2 V_PP, A_V = +10			400		V/μs
t_r	Rise time	V_O = 400 mV Step, 10% to 90%			3.7		ns
t_f	Fall time	V_O = 400 mV Step, 10% to 90%			3.7		ns
t_s	Settling time 0.1%	V_O = 2 V_PP (Step)			18		ns
DISTORTION and NOISE RESPONSE
e_n	Input referred voltage noise	f = 1 MHz			0.92		nV/√Hz
i_n	Input referred current noise	f = 1 MHz			2.3		pA/√Hz
HD2	2^nd harmonic distortion	f_C= 10 MHz, V_O = 1 V_PP, R_L = 100 Ω			–63		dBc
HD3	3^rd harmonic distortion	f_C= 10 MHz, V_O = 1 V_PP, R_L = 100 Ω			–80		dBc
INPUT CHARACTERISTICS
V_OS	Input offset voltage	V_CM = 0 V		–0.5	±0.10	+0.5	mV
	Input offset voltage	V_CM = 0 V	–40°C ≤ T_J ≤ 125°C	–0.7		+0.7	mV
	Average drift⁽⁵⁾	V_CM = 0 V			±0.2		μV/°C
I_OS	Input offset current	V_CM = 0 V		–1.1	0.05	1.1	μA
	Input offset current	V_CM = 0 V	–40°C ≤ T_J ≤ 125°C	–2.5		2.5	μA
	Average drift⁽⁵⁾	V_CM = 0 V			0.7		nA/°C
I_B	Input bias current	V_CM = 0 V			13	+20	μA
	Input bias current	V_CM = 0 V	–40°C ≤ T_J ≤ 125°C			+25	μA
	Average drift⁽⁵⁾	V_CM = 0 V			12		nA/°C
R_IN	Input resistance⁽⁷⁾	Common Mode			6.6		MΩ
R_IN	Input resistance⁽⁷⁾	Differential Mode			4.6		kΩ
C_IN	Input capacitance⁽⁷⁾	Common Mode			0.9		pF
C_IN	Input capacitance⁽⁷⁾	Differential Mode			2.0		pF
CMRR	Common-mode rejection ratio	Input referred, V_CM = –4.5 V to +5.25 V		90	95		dB
CMRR	Common-mode rejection ratio	Input referred, V_CM = –4.5 V to +5 V	–40°C ≤ T_J ≤ 125°C	87			dB
TRANSFER CHARACTERISTICS
A_VOL	Large signal voltage gain	R_L = 100 Ω, V_O = –3 V to +3 V		77	81		dB
A_VOL	Large signal voltage gain	R_L = 100 Ω, V_O = –3 V to +3 V	–40°C ≤ T_J ≤ 125°C	72			dB
OUTPUT CHARACTERISTICS
V_O	Output swing	R_L = 100 Ω		±4.4	±4.9		V
		R_L = 100 Ω	–40°C ≤ T_J ≤ 125°C	±4.3
		No load		±4.8	±5.2
		No load	–40°C ≤ T_J ≤ 125°C	±4.65
R_O	Output impedance	f ≤ 100 KHz			10		mΩ
I_SC	Output short circuit current	Sourcing to ground ΔV_IN = 200 mV ⁽²⁾⁽⁸⁾		100	156		mA
		Sourcing to ground ΔV_IN = 200 mV ⁽²⁾⁽⁸⁾	–40°C ≤ T_J ≤ 125°C	85
		Sinking to ground ΔV_IN = –200 mV ⁽²⁾⁽⁸⁾		100	156
		Sinking to ground ΔV_IN = –200 mV ⁽²⁾⁽⁸⁾	–40°C ≤ T_J ≤ 125°C	85
I_OUT	Output current	Sourcing, V_O = +4.3 V Sinking, V_O = –4.3 V			100		mA
POWER SUPPLY
PSRR	Power supply rejection ratio	V_S = ±5.4 V to ±6.6 V		82	88		dB
PSRR	Power supply rejection ratio	V_S = ±5.4 V to ±6.6 V	–40°C ≤ T_J ≤ 125°C	80			dB
I_S	Supply current (per channel)	No load			12	16	mA
I_S	Supply current (per channel)	No load	–40°C ≤ T_J ≤ 125°C			18	mA

(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.

(2) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.

(3) Typical Values represent the most likely parametric norm.

(4) All limits are specified by testing or statistical analysis.

(5) Average drift is determined by dividing the change in parameter at temperature extremes into the total temperature change.

(6) Slew rate is the slowest of the rising and falling slew rates.

(7) Simulation results.

(8) Short circuit test is a momentary test. Output short circuit duration is 1.5 ms.

(9) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. Absolute maximum ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

6.7 Typical Characteristics

Figure 1. Voltage Noise vs Frequency

V_S = ±2.5 V
V_IN = 5 mVpp
R_L = 100 Ω

Figure 3. Inverting Frequency Response

V_S = ±2.5 V
R_F = 500 Ω
V_O = 2 Vpp

Figure 5. Non-Inverting Frequency Response

V_S = ±2.5 V

Figure 7. Open Loop Frequency Response
Over Temperature

V_S = ±2.5V	R_ISO = 10 Ω
A_V = +10	R_L = 1 kΩ\|\|C_L
R_F = 250 Ω

Figure 9. Frequency Response with Cap. Loading

V_S = ±2.5 V	R_ISO = 100 Ω
A_V = +10	R_L = 1 kΩ\|\|C_L
R_F = 250 Ω

Figure 11. Frequency Response with Cap. Loading

V_S = ±-2.5 V
A_V = +10
R_F = 500 Ω

Figure 13. Non-Inverting Frequency Response Varying V_IN

V_S = ±2.5 V
A_V = +20
R_F = 500 Ω

Figure 15. Non-Inverting Frequency Response Varying V_IN

V_S = ±2.5 V

Figure 17. Sourcing Current vs V_OUT

Figure 19. V_OS vs V_SUPPLY

V_S = ±6 V

Figure 21. Sinking Current vs V_OUT

A_V = +10
R_L = 100 Ω

Figure 23. Distortion vs Frequency

A_V = +20
R_L = 500 Ω

Figure 25. Distortion vs Frequency

A_V = +20
A_V = ±2.5V
R_L = 100 Ω

Figure 27. Distortion vs V_OUT Peak to Peak

V_S = ±2.5 V	R_L = 100 Ω
V_O = 1 Vpp
A_V = +10

Figure 29. Non-Inverting Large Signal Pulse Response

V_S = ±2.5 V	R_L = 100 Ω
V_O = 200 mv
A_V = +10

Figure 31. Non-Inverting Small Signal Pulse Response

V_S = ±2.5 V

Figure 33. PSRR vs Frequency

V_S = ±2.5V
V_IN = 5 mVpp

Figure 35. Input Referred CMRR vs Frequency

V_S = ±2.5 V
A_V = +10
R_L = 100 Ω

Figure 37. Amplifier Peaking with Varying R_F

Figure 2. Current Noise vs Frequency

V_S = ±6V
V_IN = 5 mVpp
R_L = 100 Ω

Figure 4. Inverting Frequency Response

V_S = ±6 V
R_F = 500 Ω
V_O = 2 Vpp

Figure 6. Non-Inverting Frequency Response

V_S = ±6V
R_L = 100 Ω

Figure 8. Open Loop Frequency Response
Over Temperature

V_S = ±6V	R_ISO = 10 Ω
A_V = +10	R_L = 1 kΩ\|\|C_L
R_F = 250 Ω

Figure 10. Frequency Response with Cap. Loading

V_S = ±6 V	R_ISO = 10 Ω
A_V = +10	R_L = 1 kΩ\|\|C_L
R_F = 250 Ω

Figure 12. Frequency Response with Cap. Loading

V_S = ±6 V
A_V = +10
R_F = 500 Ω

Figure 14. Non-Inverting Frequency Response Varying V_IN

V_S = ±6 V
A_V = +20
R_F = 500 Ω

Figure 16. Non-Inverting Frequency Response Varying V_IN

V_S = ±6 V

Figure 18. Sourcing Current vs V_OUT

V_S = ±2.5 V

Figure 20. Sinking Current vs V_OUT

Figure 22. I_OS vs V_SUPPLY

A_V = +20
R_L = 100 Ω

Figure 24. Distortion vs Frequency

V_S = ±6 V
V_O = 2 Vpp

Figure 26. Distortion vs Gain

A_V = +20
V_S = ±6 V
R_L = 100 Ω

Figure 28. Distortion vs V_OUT Peak to Peak

V_S = ±6 V	R_L = 100 Ω
V_O = 1 Vpp
A_V = +20

Figure 30. Non-Inverting Large Signal Pulse Response

V_S = ±6 V	R_L = 100 Ω
V_O = 500 mv
A_V = +20

Figure 32. Non-Inverting Small Signal Pulse Response

V_S = ±6 V

Figure 34. PSRR vs Frequency

V_S = ±6 V
V_IN = 5 mVpp

Figure 36. Input Referred CMRR vs Frequency

V_S = ±6 V
A_V = +10 V
R_L = 100 Ω

Figure 38. Amplifier Peaking with Varying R_F