SBOS996C May   2020  – May 2021 LMH9235

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Matching to a 100 Ω AFE
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Shifting the Operating Band
        1. 8.2.2.1 Design Requirements and Procedure
        2. 8.2.2.2 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description

The LMH9235 device is a high-performance, single-channel, single-ended input to differential output receive RF gain block amplifier supporting 3.6 GHz center frequency band. The device is well suited to support requirements for the next generation 5G AAS or small cell applications where LNA gain is not sufficient to drive full-scale of an analog front-end (AFE). The RF amplifier provides 17 dB typical gain with good linearity performance of 34 dBm Output IP3, while maintaining about 3 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 50 Ω impedance at both the single-ended input as well as the differential output providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE).

Operating on a single 3.3 V supply, the device consumes about 270 mW of active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8 V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LMH9235 WQFN (12) 2.00 mm × 2.00 mm
For all available packages, see the orderable addendum at the end of the data sheet.
GUID-AD2AA8AC-E748-459D-ABE4-DB7EFAE10F8D-low.gif LMH9235: Single-Ended to Differential Amplifier