SBOS996C May   2020  – May 2021 LMH9235

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Matching to a 100 Ω AFE
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Shifting the Operating Band
        1. 8.2.2.1 Design Requirements and Procedure
        2. 8.2.2.2 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3 Feature Description

The LMH9235 device is single-ended to differential RF amplifier for narrow band active balun implementation. The device integrates the functionality of a single-ended RF amplifier and passive balun in traditional receive applications achieving small form factor with comparable linearity and noise performance, as shown in Figure 7-2.

The active balun implementation coupled with higher operating temperature of 105°C allows for more robust receiver system implementation compared to passive balun that is prone to reliability failures at high temperatures. The high temperature operation is achieved by the on-chip active bias circuitry which maintains device performance over a wide temperature and supply voltage range.

GUID-C97D9BE1-C070-4DA9-BBCD-AE04B50EA382-low.gifFigure 7-2 Single-Ended Input to Differential Output, Active Balun Implementation