SNAS826E April 2022 – April 2024 LMK6C , LMK6D , LMK6H , LMK6P
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Current Consumption Characteristics | ||||||
IDD | Device Power Consumption (LVPECL,VDD = 2.5 V/3.3 V, Excluding load current) | 100 MHz | 65 | 82 | mA | |
156.25 MHz | 69 | 87 | mA | |||
200 MHz | 67 | 85 | mA | |||
312.5 MHz | 76 | 95 | mA | |||
400 MHz | 88 | 108 | mA | |||
Device Power Consumption (LVPECL,VDD = 1.8 V, Excluding load current) | 100 MHz | 61 | 79 | mA | ||
156.25 MHz | 66 | 83 | mA | |||
200 MHz | 64 | 82 | mA | |||
312.5 MHz | 73 | 91 | mA | |||
400 MHz | 84 | 104 | mA | |||
Device Power Consumption (HCSL,VDD = 2.5 V/3.3 V, Excluding load current) | 100 MHz | 65 | 82 | mA | ||
156.25 MHz | 69 | 87 | mA | |||
200 MHz | 67 | 86 | mA | |||
312.5 MHz | 76 | 96 | mA | |||
400 MHz | 88 | 108 | mA | |||
Device Power Consumption (HCSL,VDD = 1.8 V, Excluding load current) | 100 MHz | 58 | 75 | mA | ||
156.25 MHz | 62 | 80 | mA | |||
200 MHz | 60 | 78 | mA | |||
312.5 MHz | 69 | 88 | mA | |||
400 MHz | 77 | 97 | mA | |||
Device Power Consumption (LVDS,VDD = 2.5 V/3.3 V, Excluding load current) | 100 MHz | 54 | 71 | mA | ||
156.25 MHz | 58 | 75 | mA | |||
200 MHz | 56 | 74 | mA | |||
312.5 MHz | 65 | 84 | mA | |||
400 MHz | 76 | 96 | mA | |||
Device Power Consumption (LVDS,VDD = 1.8 V, Excluding load current) | 100 MHz | 52 | 68 | mA | ||
156.25 MHz | 56 | 72 | mA | |||
200 MHz | 54 | 71 | mA | |||
312.5 MHz | 63 | 80 | mA | |||
400 MHz | 74 | 92 | mA | |||
Device Power Consumption (LVCMOS,VDD = 2.5 V / 3.3 V, with load) | 100 MHz | 45 | 62 | mA | ||
156.25 MHz | 55 | 71 | mA | |||
200 MHz | 61 | 77 | mA | |||
Device Power Consumption (LVCMOS,VDD = 1.8 V, with load) | 100 MHz | 44 | 59 | mA | ||
156.25 MHz | 50 | 65 | mA | |||
200 MHz | 56 | 72 | mA | |||
IDD-STBY | Device Stand By current | ST (Stand By) = GND | 6 | 13 | mA | |
IDD-PD | Device current with output disabled (100 MHz) | OE = GND, LVPECL mode, VDD = 3.3 V | 48 | 67 | mA | |
OE = GND, HCSL mode, VDD = 3.3 V | 49 | 67 | mA | |||
OE = GND, LVDS mode, VDD = 3.3 V | 49 | 66 | mA | |||
OE = GND, LVCMOS mode, VDD = 3.3 V | 40 | 56 | mA | |||
LVPECL Output Characteristics | ||||||
Fout | Output Frequency | 1 | 400 | MHz | ||
VOD | Output Voltage Swing (VOH - VOL) | AC coupled, VDD = 3.3V | 525 | 645 | 765 | mV |
AC coupled, VDD = 2.5V | 450 | 555 | 660 | mV | ||
AC coupled, VDD = 1.8 V | 280 | 375 | 470 | mV | ||
DC coupled, VDD = 2.5 V/ 3.3 V(1) | 650 | 800 | 950 | mV | ||
DC coupled, VDD = 1.8 V(1) | 450 | 600 | 750 | mV | ||
VOD,DIFF | Differential Output peak-peak swing | 2×|VOD| | Vpp | |||
VOS | Output Common-Mode Voltage | VDD = 3.3 V(1) | 1.5 | 1.6 | 1.7 | V |
VDD = 2.5 V(1) | 0.825 | 0.9 | 0.975 | V | ||
VDD = 1.8 V(1) | 0.45 | 0.5 | 0.55 | V | ||
tR/tF | Output Rise/Fall Time | 20% to 80% of VOD,DIFF, VDD = 2.5 V/ 3.3 V | 120 | 200 | ps | |
20% to 80% of VOD,DIFF, VDD = 1.8 V | 120 | 200 | ps | |||
ODC | Output Duty Cycle | VDD = 2.5 V/ 3.3V, measured between 50% points on the waveform | 45 | 50 | 55 | % |
VDD = 1.8 V, measured between 50% points on the waveform | 45 | 50 | 55 | % | ||
LVDS Output Characteristics | ||||||
Fout | Output Frequency | 1 | 400 | MHz | ||
VOD | Output Voltage Swing (VOH - VOL) | Under LVDS Load condition | 250 | 350 | 450 | mV |
VOD,DIFF | Differential Output peak-peak swing | 2×|VOD| | Vpp | |||
VOS | Output Common Mode Voltage | VDD = 2.5V/3.3 V | 1.025 | 1.2 | 1.375 | V |
VDD = 1.8 V | 0.80 | 0.9 | 1.0 | V | ||
tR/tF | Output Rise/Fall Time | 20% to 80% of VOD,DIFF, VDD = 2.5V/3.3 V | 150 | 250 | ps | |
20% to 80% of VOD,DIFF, VDD = 1.8V | 150 | 250 | ps | |||
ODC | Output Duty Cycle | VDD = 2.5 V/3.3 V, measured between 50% points on the waveform | 45 | 50 | 55 | % |
VDD = 1.8V, measured between 50% points on the waveform | 45 | 50 | 55 | % | ||
HCSL Output characteristics | ||||||
Fout | Output Frequency | 1 | 400 | MHz | ||
VOH | Output High Voltage | DC coupled, 50 ohms to ground, VDD = 2.5 V/ 3.3 V | 650 | 750 | 850 | mV |
DC coupled, 50 ohms to ground, VDD = 1.8 V | 460 | 560 | 660 | mV | ||
VOL | Output Low Voltage | DC coupled, 50 ohms to ground, VDD = 2.5 V/ 3.3 V | –150 | 0 | 150 | mV |
DC coupled, 50 ohms to ground, VDD = 1.8 V | –150 | 0 | 150 | mV | ||
VOD,DIFF | Differential Output peak-peak swing | 2×|VOH - VOL| | V | |||
Vcross | Absolute Crossing Point Voltage | VDD = 3.3 V / 2.5 V, fout = 100 MHz | 0.2 | 0.35 | 0.50 | Vpp |
VDD = 1.8 V, fout = 100 MHz | 0.15 | 0.275 | 0.40 | Vpp | ||
Vcross-delta | Absolute Crossing Point Voltage variation | VDD = 3.3 V / 2.5 V / 1.8 V, fout = 100 MHz | 0.14 | V | ||
dV/dt | Output Slew Rate | 50 ohms to ground; DC coupled load; measured slew rate in +/-150mV from Center. | 2 | 12 | V/ns | |
ΔdV/dt | Output Slew Rate variation | 20 | % | |||
ODC | Output Duty Cycle | 45 | 50 | 55 | % | |
LVCMOS Output Characteristics | ||||||
Fout | Output Frequency | 1 | 200 | MHz | ||
VOL | Output Low Voltage | IOL = 3.6 mA, VDD = 1.8 V | 0.36 | V | ||
IOL = 5.0 mA, VDD = 2.5 V | 0.5 | V | ||||
IOL = 6.6 mA, VDD = 3.3 V | 0.66 | V | ||||
VOH | Output High Voltage | IOH = 3.6 mA, VDD = 1.8 V | 1.44 | V | ||
IOH = 5.0 mA, VDD = 2.5 V | 2 | V | ||||
IOH = 6.6 mA, VDD = 3.3 V | 2.64 | V | ||||
tR/tF | Output Rise/Fall Time | 20% to 80% of VOH -VOL, CL = 2 pF | 0.5 | 1 | ns | |
ODC | Output Duty Cycle | 45 | 50 | 55 | % | |
Rout | Output Impedance | OE = HIGH | 40 | 50 | 60 | Ω |
CL | Maximum capacitive load | Fout > 50 MHz(3) | 15 | pF | ||
Fout < 50 MHz(3) | 30 | pF | ||||
Function Pin Input Characteristics (OE/ST pin) | ||||||
VIL | Input Low Voltage | 0.6 | V | |||
VIH | Input High Voltage | 1.3 | V | |||
IIL | Input Low Current | OE = GND | -40 | µA | ||
IIH | Input High Current | OE = VDD | 40 | µA | ||
CIN | Input Capacitance | 2 | pF | |||
LVDS, HCSL and LVPECL Frequency Tolerance | ||||||
FT | Total Frequency Stability | Inclusive of: solder shift, initial tolerance, variation over -40℃ to 85℃, variation over rated supply voltage range, and 10 year aging at 25℃. | –25 | 25 | ppm | |
Inclusive of: solder shift, initial tolerance, variation over -40℃ to 85℃, variation over supply voltage range. | –20 | 20 | ppm | |||
LVCMOS Frequency Tolerance | ||||||
FT | Total Frequency Stability | Inclusive of: solder shift, initial tolerance, variation over -40℃ to 105℃, variation over rated supply voltage range, and 10 year aging at 25℃. | -25 | 25 | ppm | |
Inclusive of: solder shift, initial tolerance, variation over -40℃ to 105℃, variation over rated supply voltage range. | -20 | 20 | ppm | |||
Differential output PSRR Characteristics | ||||||
PSRR | Spur induced by 50 mV power supply ripple at 156.25 MHz output, VDD = 2.5 V/3.3 V, No power supply decoupling capacitor | Sine wave at 50 kHz | –71 | dBc | ||
Sine wave at 100 kHz | –71 | dBc | ||||
Sine wave at 500 kHz | –72 | dBc | ||||
Sine wave at 1 MHz | –70 | dBc | ||||
PSRR | Spur induced by 50 mV power supply ripple at 156.25 MHz output, VDD = 1.8 V, No power supply decoupling capacitor | Sine wave at 50 kHz | –64 | dBc | ||
Sine wave at 100 kHz | –64 | dBc | ||||
Sine wave at 500 kHz | –67 | dBc | ||||
Sine wave at 1 MHz | –68 | dBc | ||||
PSRR | Jitter sensitivity to Power supply ripple; | 100 kHz sine wave ripple, 3.3 V Supply(2) | 4 | fs/mV | ||
LVCMOS PSRR Characteristics | ||||||
PSRR | Spur induced by 50 mV power supply ripple at 50MHz output, VDD = 2.5V/3.3 V, No power supply decoupling capacitor | Sine wave at 50 kHz | –72 | dBc | ||
Sine wave at 100 kHz | –71 | dBc | ||||
Sine wave at 500 kHz | –70 | dBc | ||||
Sine wave at 1 MHz | –69 | dBc | ||||
PSRR | Spur induced by 50 mV power supply ripple at 50MHz output, VDD = 1.8V, No power supply decoupling capacitor | Sine wave at 50 kHz | –50 | dBc | ||
Sine wave at 100 kHz | –50 | dBc | ||||
Sine wave at 500 kHz | –52 | dBc | ||||
Sine wave at 1 MHz | –55 | dBc | ||||
PSRR | Jitter sensitivity to Power supply ripple; | 100 kHz sine wave ripple, 3.3 V Supply(2) | 10 | fs/mV | ||
Power-On Characteristics | ||||||
tSTART_UP | Start-up Time | Time elapsed from 0.95 x VDD until output is enabled and output is within specification; Tested with a VDD supply ramp time of around 200 μs | 5 | ms | ||
tOE-EN | Output Enable Time | Time elapsed from OE = VIH until output is enabled and output is within specification, Fout > 10 MHz | 25 | µs | ||
tOE-DIS | Output Disable Time | Time elapsed from OE = VIL until output is disabled, Fout > 10 MHz | 1 | µs | ||
LVPECL - Clock Output Jitter | ||||||
RJ |
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 156.25 MHz | 100 | 125 | fs | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 156.25 MHz. | –95 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –127 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –146 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –156 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –158 | dBc/Hz | |||
RJ |
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 312.5 MHz | 100 | 125 | fs | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 312.5 MHz. | –89 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –121 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –140 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –150 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –154 | dBc/Hz | |||
RJ | RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 100 MHz | 125 | 170 | fs | |
Fout = 125 MHz | 100 | 125 | fs | |||
Fout = 155.52 MHz | 100 | 125 | fs | |||
Fout = 161.1328125 MHz | 110 | 150 | fs | |||
Fout = 200 MHz | 120 | 150 | fs | |||
Fout = 400 MHz | 100 | 135 | fs | |||
RPeriodJITT,RMS | RMS Period Jitter | Fout ≥ 25 MHz | 1.7 | ps | ||
RJITT,PK-PK | Peak-peak Period Jitter | Fout ≥ 25 MHz | 13 | ps | ||
LVDS - Clock Output Jitter | ||||||
RJ |
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 156.25 MHz | 100 | 125 | fs | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 156.25 MHz | –95 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –128 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –146 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –156 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –156.5 | dBc/Hz | |||
RJ |
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 312.5 MHz | 100 | 125 | fs | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 312.5 MHz. | –89 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –122 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –139 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –150 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –153.5 | dBc/Hz | |||
RJ | RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 100 MHz | 140 | 170 | fs | |
Fout = 125 MHz | 110 | 125 | fs | |||
Fout = 155.52 MHz | 105 | 140 | fs | |||
Fout = 161.1328125 MHz | 125 | 160 | fs | |||
Fout = 200 MHz | 125 | 150 | fs | |||
Fout = 400 MHz | 100 | 135 | fs | |||
RPeriodJITT,RMS | RMS Period Jitter | Fout ≥ 25 MHz | 1.6 | ps | ||
RJITT,PK-PK | Peak-peak Period Jitter | Fout ≥ 25 MHz | 13 | ps | ||
HCSL - Clock output jitter | ||||||
JPCIe1-cc | PCIe Gen 1 Common Clock jitter (jitter limit = 86 ps) | Fout = 100 MHz | 0.146 | 6.4 | ps | |
JPCIe1-SRNS | PCIe Gen 1 SRNS jitter | 0.447 | 6.99 | ps | ||
JPCIe2-cc | PCIe Gen 2 Common Clock jitter (jitter limit = 3 ps) | 0.103 | 0.554 | ps | ||
JPCIe2-SRNS | PCIe Gen 2 SRNS jitter | 0.135 | 0.56 | ps | ||
JPCIe3-cc | PCIe Gen 3 Common Clock jitter (jitter limit = 1 ps) | 0.029 | 0.164 | ps | ||
JPCIe3-SRNS | PCIe Gen 3 SRNS jitter | 0.033 | 0.180 | ps | ||
JPCIe4-cc | PCIe Gen 4 Common Clock jitter (jitter limit = 500 fs) | 0.029 | 0.164 | ps | ||
JPCIe4-SRNS | PCIe Gen 4 SRNS jitter | 0.033 | 0.180 | ps | ||
JPCIe5-cc | PCIe Gen 5 Common Clock jitter (jitter limit = 150 fs) | 0.007 | 0.070 | ps | ||
JPCIe5-SRNS | PCIe Gen 5 SRNS jitter | 0.007 | 0.074 | ps | ||
JPCIe6-cc | PCIe Gen 6 Common Clock jitter (jitter limit = 100 fs) | 0.007 | 0.042 | ps | ||
JPCIe6-SRNS | PCIe Gen 6 SRNS jitter | 0.009 | 0.052 | ps | ||
RJ |
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 156.25 MHz | 100 | 125 | fs | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 156.25 MHz. | –95 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –127 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –146 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –156 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –158 | dBc/Hz | |||
RJ |
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 312.5 MHz | 100 | 125 | fs | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 312.5 MHz. | –89 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –121 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –140 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –150 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –154 | dBc/Hz | |||
RJ | RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 100 MHz | 125 | 170 | fs | |
Fout = 125 MHz | 100 | 125 | fs | |||
Fout = 155.52 MHz | 100 | 125 | fs | |||
Fout = 161.1328125 MHz | 110 | 150 | fs | |||
Fout = 200 MHz | 120 | 150 | fs | |||
Fout = 400 MHz | 100 | 135 | fs | |||
RPeriodJITT,RMS | RMS Period Jitter | Fout ≥ 25 MHz | 1.7 | ps | ||
RJITT,PK-PK | Peak-peak Period Jitter | Fout ≥ 25 MHz | 13 | ps | ||
LVCMOS - Clock Output Jitter | ||||||
RJ | RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 156.25 MHz | 0.25 | 0.5 | ps | |
PN1k | Phase Noise at 1 kHz Offset | Fout = 156.25 MHz | –100 | dBc/Hz | ||
PN10k | Phase Noise at 10 kHz Offset | –128 | dBc/Hz | |||
PN100k | Phase Noise at 100 kHz Offset | –143 | dBc/Hz | |||
PN1M | Phase Noise at 1 MHz Offset | –150 | dBc/Hz | |||
PN10M | Phase Noise at 10 MHz Offset | –152 | dBc/Hz | |||
RJ | RMS Jitter (Integration BW: 12 kHz to 5 MHz) | Fout = 24 MHz | 0.25 | 0.5 | ps | |
Fout = 25 MHz | 0.25 | 0.5 | ps | |||
Fout = 33.33 MHz | 0.25 | 1 | ps | |||
RMS Jitter (Integration BW: 12 kHz to 20 MHz) | Fout = 40 MHz | 0.5 | 1 | ps | ||
Fout = 50 MHz | 0.4 | 1 | ps | |||
Fout = 66.66 MHz | 0.5 | 1 | ps | |||
Fout = 74.25 MHz | 0.3 | 0.5 | ps | |||
Fout = 78 MHz | 0.35 | 0.5 | ps | |||
Fout = 100 MHz | 0.35 | 0.5 | ps | |||
Fout = 125 MHz | 0.35 | 0.5 | ps | |||
RPeriodJITT,RMS | RMS Period Jitter | Fout ≥ 25 MHz | 1.5 | ps | ||
RJITT,PK-PK | Peak-peak Period Jitter | Fout ≥ 25 MHz | 13 | ps |