SNAS826E April   2022  – April 2024 LMK6C , LMK6D , LMK6H , LMK6P

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Ordering Information
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Environmental Compliance
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Timing Diagrams
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Device Output Configurations
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bulk Acoustic Wave (BAW)
      2. 8.3.2 Device Block-Level Description
      3. 8.3.3 Function Pins
      4. 8.3.4 Clock Output Interfacing and Termination
      5. 8.3.5 Temperature Stability
      6. 8.3.6 Mechanical Robustness
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Providing Thermal Reliability
        2. 9.4.1.2 Recommended Solder Reflow Profile
      2. 9.4.2 Layout
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.1 Bulk Acoustic Wave (BAW)

TI’s BAW resonator technology uses piezoelectric transduction to generate high-Q resonance at 2.5GHz. The resonator is defined by the quadrilateral area overlaid by top and bottom electrodes. Alternating high- and low-acoustic impedance layers form acoustic mirrors beneath the resonant body to prevent acoustic energy leakage into the substrate. Furthermore, these acoustic mirrors are also placed on top of the resonator stack to protect the device from contamination and minimize energy leakage into the package materials. This unique dual-Bragg acoustic resonator (DBAR) allows efficient excitation without the need of costly vacuum cavities around the resonator. As a result, TI’s BAW resonator is immune to frequency drift caused by adsorption of surface contaminants and can be directly placed in a non-hermetic plastic package with the oscillator IC in small standard oscillator footprints. Refer to BAW for more details on BAW technology.