SNOSDB6D December   2020  – October 2024 LMP7704-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 5 V
    6. 5.6 Electrical Characteristics VS = 10 V
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Radiation Hardened Performance
      2. 6.3.2 Engineering Model (Devices With /EM Suffix)
      3. 6.3.3 Diodes Between the Inputs
      4. 6.3.4 Capacitive Load
      5. 6.3.5 Input Capacitance
    4. 6.4 Device Functional Modes
      1. 6.4.1 Precision Current Source
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Low Input Voltage Noise
      2. 7.1.2 Total Noise Contribution
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • HBH|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5 Electrostatic Discharge Caution

LMP7704-SP This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.