SNVSBR8D March 2020 – June 2022 LMQ61460
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE AND CURRENT | ||||||
VIN_OPERATE | Input operating voltage(3) | Needed to start up | 3.95 | V | ||
Once operating | 3.0 | |||||
VIN_OPERATE_H | Hysteresis(3) | 1 | V | |||
IQ | Operating quiescent current (not switching); measured at the VIN pin(1) | VFB = +5%, VBIAS = 5 V | 0.6 | 6 | µA | |
IBIAS | Current into the BIAS pin (not switching, maximum at TJ = 125°C)(1) | VFB = +5%, VBIAS = 5 V, auto mode | 24 | 31.2 | µA | |
ISD | Shutdown quiescent current; measured at the VIN pin | EN = 0 V, TJ = 25℃ | 0.6 | 6 | µA | |
ENABLE | ||||||
VEN | Enable input threshold voltage – rising | 1.263 | V | |||
VEN-ACC | Enable input threshold voltage – rising deviation from typical | –8.1% | 8.1% | |||
VEN-HYST | Enable threshold hysteresis as percentage of VEN (typical) | 24% | 28% | 32% | ||
VEN-WAKE | Enable wake-up threshold | 0.4 | V | |||
IEN | Enable pin input current | VIN = EN = 13.5 V | 2.3 | µA | ||
VEN_SYNC | Edge height necessary to sync using the EN/SYNC pin | Rise and fall time < 30 ns | 2.4 | V | ||
LDO - VCC | ||||||
VCC | Internal VCC voltage | VBIAS > 3.4 V, CCM operation(3) | 3.3 | V | ||
VBIAS = 3.1 V, non-switching | 3.1 | |||||
VCC_UVLO | Internal VCC input undervoltage lockout | VCC rising undervoltage threshold | 3.6 | V | ||
VCC_UVLO_HYST | Internal VCC input undervoltage lockout | Hysteresis below VCC_UVLO | 1.1 | V | ||
FEEDBACK | ||||||
VFB_acc | Initial reference voltage accuracy for 5-V, 3.3-V, and adjustable (1 V FB) versions | VIN = 3.3 V to 36 V, TJ = 25℃, FPWM mode | –1% | 1% | ||
IFB | Input current from FB to AGND | Adjustable versions only, FB = 1 V | 10 | nA | ||
OSCILLATOR | ||||||
fADJ | Minimum adjustable frequency by RT or SYNC | RT = 66.5 kΩ | 0.18 | 0.2 | 0.22 | MHz |
Adjustable frequency by RT or SYNC with 400 kHz setting | RT = 33.2 kΩ | 0.36 | 0.4 | 0.44 | MHz | |
Maximum adjustable frequency by RT or SYNC | RT = 5.76 kΩ | 1.98 | 2.2 | 2.42 | MHz | |
MOSFETS | ||||||
RDS(ON)_HS | Power switch on-resistance | High-side MOSFET RDS(ON) | 41 | 82 | mΩ | |
RDS(ON)_LS | Power switch on-resistance | Low-side MOSFET RDS(ON) | 21 | 45 | mΩ | |
VBOOT_UVLO | Voltage on CBOOT pin compared to SW, which turns off high-side switch | 2.1 | V | |||
CURRENT LIMITS | ||||||
IL-HS | High-side switch current limit(2) | Duty cycle approaches 0% | 8.9 | 10.3 | 11.5 | A |
IL-LS | Low-side switch current limit | 6.1 | 7.1 | 8.1 | A | |
IL-ZC | Zero-cross current limit. Positive current direction is out of the SW pin | Auto mode, static measurement | 0.25 | A | ||
IL-NEG | Negative current limit FPWM and SYNC modes. Positive current direction is out of the SW pin. | FPWM operation | –3 | A | ||
IPK_MIN_0 | Minimum peak command in auto mode and device current rating | Pulse duration < 100 ns | 25% | |||
IPK_MIN_100 | Minimum peak command in auto mode and device current rating | Pulse duration > 1 µs | 12.5% | |||
VHICCUP | Ratio of FB voltage to in-regulation FB voltage | Not during soft start | 40% | |||
POWER GOOD | ||||||
PGDOV | PGOOD upper threshold – rising | % of VOUT setting | 105% | 107% | 110% | |
PGDUV | PGOOD lower threshold - falling | % of VOUT setting | 92% | 94% | 96.5% | |
PGDHYST | PGOOD upper threshold (rising and falling) | % of VOUT setting | 1.3% | |||
VIN(PGD_VALID) | Input voltage for proper PGOOD function | 1.0 | V | |||
VPGD(LOW) | Low level PGOOD function output voltage | 46-µA pullup to PGOOD pin, VIN = 1.0 V, EN = 0 V | 0.4 | V | ||
1-mA pullup to the PGOOD pin, VIN = 13.5 V, EN = 0 V | 0.4 | |||||
2-mA pullup to the PGOOD pin, VIN = 13.5 V, EN = 3.3 V | 0.4 | |||||
RPGD | RDS(ON) of PGOOD output | 1-mA pullup to PGOOD pin, EN = 0 V | 17 | 40 | Ω | |
1-mA pullup to PGOOD pin, EN = 3.3 V | 40 | 90 | Ω | |||
IOV | Pulldown current at the SW node under overvoltage condition | 0.5 | mA | |||
THERMAL SHUTDOWN | ||||||
TSD_R | Thermal shutdown rising threshold(3) | 158 | 168 | 180 | ℃ | |
TSD_HYST | Thermal shutdown hysteresis(3) | 10 | ℃ |