SNVSAH4C December 2015 – February 2018 LMR23610
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more EMI is generated. High frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing ceramic bypass capacitor(s) as close as possible to the VIN and PGND pins is the key to EMI reduction.
The SW pin connecting to the inductor should be as short as possible, and just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) should be used for high current conduction path to minimize parasitic resistance. The output capacitors should be placed close to the VOUT end of the inductor and closely grounded to PGND pin and exposed PAD.
The bypass capacitors on VCC should be placed as close as possible to the pin and closely grounded to PGND and the exposed PAD.