SNVSAR5B December 2016 – March 2018 LMR23625-Q1
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
Radiated EMI is generated by the high di/dt components in pulsing currents in switching converters. The larger area covered by the path of a pulsing current, the more EMI is generated. High-frequency ceramic bypass capacitors at the input side provide primary path for the high di/dt components of the pulsing current. Placing ceramic bypass capacitor(s) as close as possible to the VIN and PGND pins is the key to EMI reduction.
The SW pin connecting to the inductor must be as short as possible, just wide enough to carry the load current without excessive heating. Short, thick traces or copper pours (shapes) must be used for high-current conduction path to minimize parasitic resistance. Place the output capacitors close to the VOUT end of the inductor and closely grounded to PGND pin and exposed PAD.
Place the bypass capacitors on VCC as close as possible to the pin and closely grounded to PGND and the exposed PAD.