SNVSAR5B December   2016  – March 2018 LMR23625-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Efficiency vs Load, VIN = 12 V, PFM Option
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Fixed-Frequency Peak-Current-Mode Control
      2. 8.3.2  Adjustable Output Voltage
      3. 8.3.3  EN/SYNC
      4. 8.3.4  VCC, UVLO
      5. 8.3.5  Minimum ON-Time, Minimum OFF-Time and Frequency Foldback at Dropout Conditions
      6. 8.3.6  Power Good (PGOOD)
      7. 8.3.7  Internal Compensation and CFF
      8. 8.3.8  Bootstrap Voltage (BOOT)
      9. 8.3.9  Overcurrent and Short-Circuit Protection
      10. 8.3.10 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
      3. 8.4.3 CCM Mode
      4. 8.4.4 Light Load Operation (PFM Option)
      5. 8.4.5 Light Load Operation (FPWM Option)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design With WEBENCH® Tools
        2. 9.2.2.2  Output Voltage Setpoint
        3. 9.2.2.3  Switching Frequency
        4. 9.2.2.4  Inductor Selection
        5. 9.2.2.5  Output Capacitor Selection
        6. 9.2.2.6  Feed-Forward Capacitor
        7. 9.2.2.7  Input Capacitor Selection
        8. 9.2.2.8  Bootstrap Capacitor Selection
        9. 9.2.2.9  VCC Capacitor Selection
        10. 9.2.2.10 Undervoltage Lockout Setpoint
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Compact Layout for EMI Reduction
      2. 11.1.2 Ground Plane and Thermal Considerations
      3. 11.1.3 Feedback Resistors
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 Custom Design With WEBENCH® Tools
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DRR|12
  • DDA|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.1.2 Ground Plane and Thermal Considerations

TI recommends using one of the middle layers as a solid ground plane. Ground plane provides shielding for sensitive circuits and traces. It also provides a quiet reference potential for the control circuitry. The AGND and PGND pins must be connected to the ground plane using vias right next to the bypass capacitors. PGND pin is connected to the source of the internal LS switch. They must be connected directly to the grounds of the input and output capacitors. The PGND net contains noise at switching frequency and may bounce due to load variations. Constrain the PGND trace, as well as VIN and SW traces, to one side of the ground plane. The other side of the ground plane contains much less noise and must be used for sensitive routes.

TI recommends providing adequate device heat sinking by utilizing the PAD of the device as the primary thermal path. Use a minimum 4 by 2 array of 12 mil thermal vias to connect the PAD to the system ground plane heat sink. The vias must be evenly distributed under the PAD. Use as much copper as possible, for system ground plane, on the top and bottom layers for the best heat dissipation. Use a four-layer board with the copper thickness for the four layers, starting from the top of 2 oz / 1 oz / 1 oz / 2 oz. Four-layer boards with enough copper thickness provides low current-conduction impedance, proper shielding and lower thermal resistance.

The thermal characteristics of the LMR23625-Q1 are specified using the parameter RθJA, which characterize the junction temperature of silicon to the ambient temperature in a specific system. Although the value of RθJA is dependent on many variables, it still can be used to approximate the operating junction temperature of the device. To obtain an estimate of the device junction temperature, one may use Equation 22:

Equation 22. TJ = PD x RθJA + TA

where

  • TJ = junction temperature in °C
  • PD = VIN × IIN × (1 – efficiency) – 1.1 × IOUT2 × DCR in Watt
  • DCR = Inductor DC parasitic resistance in Ω
  • rθJA = Junction-to-ambient thermal resistance of the device in °C/W
  • TA = ambient temperature in °C

The maximum operating junction temperature of the LMR23625-Q1 is 125°C. RθJA is highly related to PCB size and layout, as well as environmental factors such as heat sinking and air flow.