SNVSBE0G October 2020 – May 2024 LMR43610-Q1 , LMR43620-Q1
PRODUCTION DATA
Figure 8-1 shows a typical application circuit for the LMR436x0-Q1. This device is designed to function over a wide range of external components and system parameters. However, the internal compensation is optimized for a certain range of external inductance and output capacitance. As a quick-start guide, Table 8-1 and Table 8-2 provide typical component values for a range of the most common output voltages.
ƒSW(1) (2) (kHz) | VOUT (V) | L (µH) | NOMINAL COUT (RATED CAPACITANCE) | RFBT (3) (kΩ) | RFBB (kΩ) | CIN | CBOOT | CVCC |
---|---|---|---|---|---|---|---|---|
400 | 3.3 | 10 | 3 × 22µF | 33.2 | 14.3 | 4.7µF + 1 × 100nF | 100nF | 1µF |
2200 | 3.3 | 2.2 | 2 × 22µF | 33.2 | 14.3 | 4.7µF + 1 × 100nF | 100nF | 1µF |
400 | 5 | 10 | 3 × 22µF | 49.9 | 12.4 | 4.7µF + 1 × 100nF | 100nF | 1µF |
2200 | 5 | 2.2 | 2 × 22µF | 49.9 | 12.4 | 4.7µF + 1 × 100nF | 100nF | 1µF |
ƒSW(1) (2) (kHz) | VOUT (V) | L (µH) | NOMINAL COUT (RATED CAPACITANCE) | RFBT (kΩ) | RFBB (3) (kΩ) | CIN | CBOOT | CVCC |
---|---|---|---|---|---|---|---|---|
400 | 3.3 | 10 | 3 × 22µF | 0 | DNP | 4.7µF + 1 × 100nF | 100nF | 1µF |
2200 | 3.3 | 2.2 | 2 × 22µF | 0 | DNP | 4.7µF + 1 × 100nF | 100nF | 1µF |
400 | 5 | 10 | 3 × 22µF | 0 | DNP | 4.7µF + 1 × 100nF | 100nF | 1µF |
2200 | 5 | 2.2 | 2 × 22µF | 0 | DNP | 4.7µF + 1 × 100nF | 100nF | 1µF |