SNIS201A October   2017  – June 2022 LMT86-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Accuracy Characteristics
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 LMT86-Q1 Transfer Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Mounting and Thermal Conductivity
      2. 8.4.2 Output Noise Considerations
      3. 8.4.3 Capacitive Loads
      4. 8.4.4 Output Voltage Shift
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Connection to an ADC
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Conserving Power Dissipation With Shutdown
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.4 Output Voltage Shift

The LMT86-Q1 device is very linear over temperature and supply voltage range. Due to the intrinsic behavior of an NMOS/PMOS rail-to-rail buffer, a slight shift in the output can occur when the supply voltage is ramped over the operating range of the device. The location of the shift is determined by the relative levels of VDD and VOUT. The shift typically occurs when VDD – VOUT = 1 V.

This slight shift (a few millivolts) takes place over a wide change (approximately 200 mV) in VDD or VOUT. Because the shift takes place over a wide temperature change of 5°C to 20°C, VOUT is always monotonic. The accuracy specifications in the Accuracy Characteristics table already include this possible shift.