SNOSA87C October   2003  – October 2016 LMV116 , LMV118

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: 2.7 V
    6. 6.6 Electrical Characteristics: 5 V
    7. 6.7 Electrical Characteristics: ±5 V
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Quasi-Saturated State
      2. 7.4.2 Micro-Power Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application: 2.7-V Single Supply 2:1 MUX
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage (V+ - V−) 12.6 V
Voltage at INPUT and OUTPUT pins V− −0.8 V+ + 0.8 V
Output short-circuit duration See(3), (4)
Junction temperature(5) 150 °C
Soldering information Infrared or convection (20 seconds) 235 °C
Wave soldering lead temperature (10 seconds) 260 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the TI Sales Office/ Distributors for availability and specifications.
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(4) Output short circuit duration is infinite for VS < 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.
(5) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA . All numbers apply for packages soldered directly onto a PC board.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage (V+ – V−) 2.5 12 V
Temperature(1) −40 85 °C
(1) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ RθJA . All numbers apply for packages soldered directly onto a PC board.

6.4 Thermal Information

THERMAL METRIC(1) LMV116 LMV118 UNIT
DBV (SOT-23) DBV (SOT-23)
5 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 182.7 182.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 139.9 139.9 °C/W
RθJB Junction-to-board thermal resistance 41.4 41.4 °C/W
ψJT Junction-to-top characterization parameter 28.5 28.5 °C/W
ψJB Junction-to-board characterization parameter 40.9 40.9 °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

6.5 Electrical Characteristics: 2.7 V

Unless otherwise specified, all limits apply for TJ = 25°C, V+ = 2.7 V, V− = 0 V, VCM = VO = V+ / 2, and RF = 2 kΩ, and
RL = 1 kΩ to V+ / 2.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0 V ≤ VCM ≤ 1.7 V ±1 ±5 mV
0 V ≤ VCM ≤ 1.7 V
–40°C to 85°C		 ±6
TC VOS Input offset average drift See(3) ±5 μV/C
IB Input bias current See(4) −2 −0.4 μA
See(4), –40°C to 85°C –2.2
IOS Input offset current 1 500 nA
CMRR Common mode rejection ratio VCM stepped from 0 V to 1.55 V 73 88 dB
PSRR Power supply rejection ratio V+ = 2.7 V to 3.7 V or V− = 0 V to −1 V 72 85 dB
RIN Common mode input resistance 3 MΩ
CIN Common mode input capacitance 2 pF
CMVR Input common-mode voltage range CMRR ≥ 50 dB −0.3 1.7 V
CMRR ≥ 50 dB, –40°C to 85°C –0.1
AVOL Large signal voltage gain VO = 0.35 V to 2.35 V 73 87 dB
VO = 0.35 V to 2.35 V, –40°C to 85°C 70
VO Output swing high RL = 1 kΩ to V+/2 2.55 2.66 V
RL = 10 kΩ to V+/2 2.68
Output swing low RL = 1 kΩ to V+/2 150 40 mV
RL = 10 kΩ to V+/2 20
ISC Output short-circuit current Sourcing to V−
VID = 200 mV(5)		 25 35 mA
Sinking to V+
VID = −200 mV(5)		 25 32
IOUT Output current VOUT = 0.5 V from rails ±20 mA
IS Supply current Normal operation 600 900 μA
Shutdown mode (LMV118) 15 50
SR Slew rate (6) AV = +1, VO = 1 VPP 40 V/μs
BW −3 dB BW AV = +1, VOUT = 200 mVPP 45 MHz
en Input-referred voltage noise f = 100 kHz 40 nV/√Hz
f = 1 kHz 60
in Input-referred current noise f = 100 kHz 0.75 pA/√Hz
f = 1 kHz 1.2
ton Turnon time (LMV118) 250 ns
toff Turnoff time (LMV118) 560 ns
THSD Shutdown threshold (LMV118) IS ≤ 50 μA 1.95 2.3 V
ISD SHUTDOWN pin input current (LMV118) See(4) −20 μA
(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(4) Positive current corresponds to current flowing into the device.
(5) Short-circuit test is a momentary test. See Absolute Maximum Ratings, note 4.
(6) Slew rate is the average of the rising and falling slew rates.

6.6 Electrical Characteristics: 5 V

Unless otherwise specified, all limits apply for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2, and RF = 2 kΩ, and RL = 1 kΩ to V+/2.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0 V ≤ VCM ≤ 1.7 V ±1 ±5 mV
0 V ≤ VCM ≤ 1.7 V
–40°C to 85°C		 ±6
TC VOS Input offset average drift See(3) ±5 μV/C
IB Input bias current See(4) −2 −0.4 μA
See(4), –40°C to 85°C –2.2
IOS Input offset current 1 500 nA
CMRR Common mode rejection ratio VCM stepped from 0 V to 3.8 V 77 85 dB
PSRR Power supply rejection ratio V+ = 5 V to 6 V or V− = 0 V to −1 V 72 95 dB
RIN Common mode input resistance 3 MΩ
CIN Common mode input capacitance 2 pF
CMVR Input common-mode voltage range CMRR ≥ 50 dB −0.3 4 V
CMRR ≥ 50 dB, –40°C to 85°C –0.1
AVOL Large signal voltage gain VO = 1.5 V to 3.5 V 73 87 dB
VO = 1.5 V to 3.5 V, –40°C to 85°C 70
VO Output swing high RL = 1 kΩ to V+/2 4.8 4.95 V
RL = 10 kΩ to V+/2 4.98
Output swing low RL = 1 kΩ to V+/2 200 50 mV
RL = 10 kΩ to V+/2 20
ISC Output short-circuit current Sourcing to V−
VID = 200 mV(5)		 35 45 mA
Sinking to V+
VID = –200 mV(5)		 35 43
IOUT Output current VOUT = 0.5 V from rails ±20 mA
IS Supply current Normal operation 600 900 μA
Shutdown mode (LMV118) 10 50
SR Slew rate (6) AV = +1, VO = 1 VPP 40 V/μs
BW −3 dB BW AV = +1, VOUT = 200 mVPP 45 MHz
en Input-referred voltage noise f = 100 kHz 40 nV/√Hz
f = 1 kHz 60
in Input-referred current noise f = 100 kHz 0.75 pA/√Hz
f = 1 kHz 1.2
ton Turnon time (LMV118) 210 ns
toff Turnoff time (LMV118) 500 ns
THSD Shutdown threshold (LMV118) IS ≤ 50 μA 4.25 4.6 V
ISD SHUTDOWN pin input current (LMV118) See(4) −20 μA
(1) All limits are specified by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(4) Positive current corresponds to current flowing into the device.

6.7 Electrical Characteristics: ±5 V

Unless otherwise specified, all limits apply for TJ = 25°C, V+ = 5 V, V− = –5 V, VCM = VO = 0 V, and RF = 2 kΩ, and RL = 1 kΩ to V+/2.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX(1) UNIT
VOS Input offset voltage 0 V ≤ VCM ≤ 1.7 V ±1 ±5 mV
0 V ≤ VCM ≤ 1.7 V
–40°C to 85°C		 ±6
TC VOS Input offset average drift See(3) ±5 μV/C
IB Input bias current See(4) −2 −0.4 μA
See(4), –40°C to 85°C –2.2
IOS Input offset current 3 500 nA
CMRR Common mode rejection ratio VCM stepped from 0 V to 3.8 V 78 104 dB
PSRR Power supply rejection ratio V+ = 5 V to 6 V or V− = 0 V to −1 V 72 95 dB
RIN Common mode input resistance 3 MΩ
CIN Common mode input capacitance 2 pF
CMVR Input common-mode voltage range CMRR ≥ 50 dB −5.3 4 V
CMRR ≥ 50 dB, –40°C to 85°C –5.1
AVOL Large signal voltage gain VO = 1.5 V to 3.5 V 74 85 dB
VO = 1.5 V to 3.5 V, –40°C to 85°C 71
VO Output swing high RL = 1 kΩ to V+/2 4.7 4.92 V
RL = 10 kΩ to V+/2 4.97
Output swing low RL = 1 kΩ to V+/2 –4.7 –4.92 V
RL = 10 kΩ to V+/2 –4.98
ISC Output short-circuit current Sourcing to V−
VID = 200 mV(5)		 40 57 mA
Sinking to V+
VID = −200 mV(5)		 40 54
IOUT Output current VOUT = 0.5 V from rails ±20 mA
IS Supply current Normal operation 600 900 μA
Shutdown mode (LMV118) 15 50
SR Slew rate (6) AV = 1, VO = 1 VPP 35 V/μs
BW −3 dB BW AV = 1, VOUT = 200 mVPP 45 MHz
en Input-referred voltage noise f = 100 kHz 40 nV/√Hz
f = 1 kHz 60
in Input-referred current noise f = 100 kHz 0.75 pA/√Hz
f = 1 kHz 1.2
ton Turnon time (LMV118) 200 ns
toff Turnoff time (LMV118) 700 ns
THSD Shutdown threshold (LMV118) IS ≤ 50 μA 4.25 4.6 V
ISD SHUTDOWN pin input current (LMV118) See(4) −20 μA
(1) Typical values represent the most likely parametric norm.
(2) Offset voltage average drift determined by dividing the change in VOS. All limits are specified by testing or statistical analysis.
(3) at temperature extremes into the total temperature change.
(4) Positive current corresponds to current flowing into the device.
(5) Short-circuit test is a momentary test. See Absolute Maximum Ratings, note 4.

6.8 Typical Characteristics

At TJ = 25°C. Unless otherwise specified.
LMV116 LMV118 20080701.gif
Figure 1. Supply Current vs Supply Voltage
LMV116 LMV118 20080719.gif
Figure 3. Gain and Phase vs Frequency
LMV116 LMV118 20080713.gif
Figure 5. PSRR vs Frequency
LMV116 LMV118 20080717.gif
Figure 7. Input Current Noise vs Frequency
LMV116 LMV118 20080715.gif
Figure 9. Frequency Response For Various (AV)
LMV116 LMV118 20080705.gif
Figure 11. Offset Voltage vs Common Mode Voltage
(a Typical Unit)
LMV116 LMV118 20080707.gif
Figure 13. Offset Voltage vs Common Mode Range
(a Typical Unit)
LMV116 LMV118 20080708.gif
Figure 15. Input Bias Current vs VCM
LMV116 LMV118 20080709.gif
Figure 17. Sink Current vs VOUT
LMV116 LMV118 20080711.gif
Figure 19. Source Current vs VOUT
LMV116 LMV118 20080703.gif
Figure 2. Supply Current vs VCM
LMV116 LMV118 20080720.gif
Figure 4. CMRR vs Frequency
LMV116 LMV118 20080718.gif
Figure 6. Input Voltage Noise vs Frequency
LMV116 LMV118 20080716.gif
Figure 8. Closed-Loop Frequency Response for Various Temperature
LMV116 LMV118 20080714.gif
Figure 10. Large Signal Step Response
LMV116 LMV118 20080706.gif
Figure 12. Offset Voltage vs Common Mode Voltage (a Typical Unit)
LMV116 LMV118 20080702.gif
Figure 14. Input Bias Current vs Supply Voltage
LMV116 LMV118 20080710.gif
Figure 16. Sink Current vs VOUT
LMV116 LMV118 20080712.gif
Figure 18. Souce Current vs VOUT