SBOS923I December   2017  – July 2024 LMV321A , LMV324A , LMV358A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Functions and Configurations
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information: LMV321A
    5. 5.5 Thermal Information: LMV358A
    6. 5.6 Thermal Information: LMV324A
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Operating Voltage
      2. 6.3.2 Input Common Mode Range
      3. 6.3.3 Rail-to-Rail Output
      4. 6.3.4 Overload Recovery
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 LMV3xxA Low-Side, Current Sensing Application
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Single-Supply Photodiode Amplifier
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Input and ESD Protection
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.7 Electrical Characteristics

For VS = (V+) – (V–) = 2.5 V to 5.5 V (±1.25 V to ±2.75 V), TA = 25°C, RL = 10 kΩ connected to VS / 2, and VCM = VOUT = VS / 2 (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OFFSET VOLTAGE
VOSInput offset voltageVs = 5 V±1±4mV
Vs = 5 V, TA = –40°C to 125°C±5
dVOS/dTVOS vs temperatureTA = –40°C to 125°C±1µV/°C
PSRRPower-supply rejection ratioVS = 2.5 to 5.5 V, VCM = (V–)78100dB
INPUT VOLTAGE RANGE
VCMCommon-mode
voltage range		No phase reversal, rail-to-rail input(V–) – 0.1(V+) – 1V
CMRRCommon-mode
rejection ratio		VS = 2.5 V, (V–) – 0.1 V < VCM < (V+) – 1.4 V
TA = –40°C to 125°C		86dB
VS = 5.5 V, (V–) – 0.1 V < VCM < (V+) – 1.4 V
TA = –40°C to 125°C		95
VS = 5.5 V, (V–) – 0.1 V < VCM < (V+) + 0.1 V
TA = –40°C to 125°C		6377
VS = 2.5 V, (V–) – 0.1 V < VCM < (V+) + 0.1 V
TA = –40°C to 125°C		68
INPUT BIAS CURRENT
IBInput bias currentVs = 5 V±10pA
IOSInput offset current±3pA
NOISE
EnInput voltage noise
(peak-to-peak)		ƒ = 0.1 Hz to 10 Hz, Vs = 5 V5.1µVPP
enInput voltage noise densityƒ = 1 kHz, Vs = 5 V33nV/√ Hz
ƒ = 10 kHz, Vs = 5 V30
inInput current noise densityƒ = 1 kHz, Vs = 5 V25fA/√ Hz
INPUT CAPACITANCE
CIDDifferential1.5pF
CICCommon-mode5pF
OPEN-LOOP GAIN
AOLOpen-loop voltage gainVS = 5.5 V, (V–) + 0.05 V < VO < (V+) – 0.05 V, RL = 10 kΩ100115dB
VS = 2.5 V, (V–) + 0.04 V < VO < (V+) – 0.04 V, RL = 10 kΩ98
VS = 2.5 V, (V–) + 0.1 V < VO < (V+) – 0.1 V, RL = 2 kΩ112
VS = 5.5 V, (V–) + 0.15 V < VO < (V+) – 0.15 V, RL = 2 kΩ128
FREQUENCY RESPONSE
GBWGain-bandwidth productVs = 5 V1MHz
φmPhase marginVS = 5.5 V, G = 176°
SRSlew rateVs = 5 V1.7V/µs
tSSettling timeTo 0.1%, VS = 5 V, 2-V step , G = +1, CL = 100 pF3µs
To 0.01%, VS = 5 V, 2-V step , G = +1, CL = 100 pF4
tOROverload recovery timeVS = 5 V, VIN × gain > VS0.9µs
THD+NTotal harmonic distortion
+ noise		VS = 5.5 V, VCM = 2.5 V, VO = 1 VRMS, G = +1, f = 1 kHz,
80-kHz measurement BW		0.005%
OUTPUT
VOVoltage output swing
from supply rails		VS = 5.5 V, RL = 10 kΩ2050mV
VS = 5.5 V, RL = 2 kΩ4075
ISCShort-circuit currentVs = 5.5 V±40mA
ZOOpen-loop output impedanceVs = 5 V, f = 1 MHz1200Ω
POWER SUPPLY
VSSpecified voltage range2.5 (±1.25)5.5 (±2.75)V
IQQuiescent current per amplifierIO = 0 mA, VS = 5.5 V70125µA
IO = 0 mA, VS = 5.5 V, TA = –40°C to 125°C150
Power-on timeVS = 0 V to 5 V, to 90% IQ level50µs