SLOS263Y august   1999  – august 2023 LMV321 , LMV324 , LMV358

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: LMV321
    5. 6.5 Thermal Information: LMV324
    6. 6.6 Thermal Information: LMV358
    7. 6.7 Electrical Characteristics: VCC+ = 2.7 V
    8. 6.8 Electrical Characteristics: VCC+ = 5 V
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Unity-Gain Bandwidth
      3. 7.3.3 Slew Rate
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Typical Application
      1. 8.1.1 Design Requirements
      2. 8.1.2 Detailed Design Procedure
        1. 8.1.2.1 Amplifier Selection
        2. 8.1.2.2 Passive Component Selection
      3. 8.1.3 Application Curves
    2. 8.2 Power Supply Recommendations
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|14
  • PW|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.