SNOS032I August 1999 – June 2016 LMV821-N , LMV822-N , LMV822-N-Q1 , LMV824-N , LMV824-N-Q1
PRODUCTION DATA.
The LMV821/LMV822/LMV824 op amps bring performance and economy to low voltage, low power systems. With a 5 MHz unity-gain frequency, at 2.7 V supply, and a 1.4 V/µs slew rate, the quiescent current is only 220 µA per amplifier. They provide rail to rail output (RRO) swing into 600 Ω load. The input common-mode voltage range includes ground and the maximum input offset voltage is 3.5 mV. They are also capable of easily driving large capacitive loads as indicated in the applications section.
The LMV821 single op amp is available in the tiny SC70-5 package, which is about half the size of the previous title holder, the SOT23-5. The LMV824NDGV is specified over the extended industrial temperature range and is in a TVSOP package.
Overall, the LMV821/LMV822/LMV824 devices are low voltage, low power and performance op amps designed for a wide range of applications at an economical price.
DEVICE NAME | PACKAGE | BODY SIZE |
---|---|---|
LMV821-N | SOT23 (5) | 2.92 mm x 1.60 mm |
SC70 (5) | 2.00 mm x 1.25 mm | |
LMV822-N | SOIC (8) | 4.90 mm x 3.91 mm |
VSSOP (8) | 3.00 mm x 3.00 mm | |
LMV822-N-Q1 | VSSOP (8) | 3.00 mm x 3.00 mm |
LMV824-N | SOIC (14) | 8.65 mm x 3.91 mm |
TSSOP (14) | 5.00 mm x 4.40 mm | |
LMV824-N-Q1 | TSSOP (14) | 5.00 mm x 4.40 mm |
LMV824I | TVSOP (14) | 4.40 mm x 3.60 mm |
Changes from H Revision (April 2014) to I Revision
Changes from G Revision (November 2013) to H Revision
Changes from D Revision (February 2013) to G Revision
PIN NAME | I/O | DESCRIPTION | |
---|---|---|---|
+IN | I | Non-Inverting Input | |
-IN | I | Inverting Input | |
OUT | O | Output | |
V- | P | Negative Supply | |
V+ | P | Positive Supply |
MIN | MAX | UNIT | |
---|---|---|---|
Differential Input Voltage | V– | V+ | V |
Supply Voltage (V+– V −) | –0.3 | 5.5 | V |
Output Short Circuit to V+(3) | See (3) | ||
Output Short Circuit to V−(3) | See (3) | ||
Soldering Information | |||
Infrared or Convection (20 sec) | 235 | °C | |
Junction Temperature(1) | 150 | °C | |
Storage Temperature Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) (2)(3) | ±2000 | V |
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) LMV821 | ±1500 | |||
Machine Model (MM) (4) | ±200 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Supply Voltage | 2.5 | 5.5 | V | ||
Temperature Range | LMV821, LMV822, LMV824 | –40 | 85 | °C | |
LMV822-Q1, LMV824I and LMV824-Q1 | –40 | 125 |
THERMAL METRIC(1) | DCK SC70-5 PACKAGE |
DBV SOT23-5 PACKAGE |
UNIT | |
---|---|---|---|---|
5 PIN | 5 PIN | |||
RθJA | Junction-to-ambient thermal resistance | 263.4 | 217.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 102.8 | 142.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 50.9 | 49.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 3.7 | 29.1 | °C/W |
ψJB | Junction-to-board characterization parameter | 50.2 | 48.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
THERMAL METRIC(1) | D SOIC PACKAGE |
DGK VSSOP PACKAGE |
UNIT | |
---|---|---|---|---|
8 PIN | 8 PIN | |||
RθJA | Junction-to-ambient thermal resistance | 132.6 | 193.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 76.9 | 84.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 73.2 | 114.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 25.0 | 21.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 72.6 | 113.0 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
THERMAL METRIC(1) | D SOIC PACKAGE |
PW TSSOP PACKAGE |
DGV TVSOP PACKAGE |
UNIT | |
---|---|---|---|---|---|
14 PIN | 14 PIN | 14 PIN | |||
RθJA | Junction-to-ambient thermal resistance | 109.7 | 135.6 | 148.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 65.9 | 63.8 | 67.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 64.1 | 77.4 | 77.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 24.5 | 13.0 | 12.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 63.9 | 76.8 | 76.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN (3) | TYP (2) | MAX (3) | UNIT | |
---|---|---|---|---|---|---|
VOS | Input Offset Voltage | LMV821/822/822-Q1/824 | 1 | 3.5 | mV | |
LMV821/822/822-Q1/824, Over Temperature | 4 | |||||
LMV824-Q1/LMV824I | 1 | |||||
LMV824-Q1/LMV824I, Over Tempeature | 5.5 | |||||
TCVOS | Input Offset Voltage Average Drift | 1 | μV/°C | |||
IB | Input Bias Current | 30 | 90 | nA | ||
Over Temperature | 140 | |||||
IOS | Input Offset Current | 0.5 | 30 | nA | ||
Over Temperature | 50 | |||||
CMRR | Common Mode Rejection Ratio | 0V ≤ VCM ≤ 1.7V | 70 | 85 | dB | |
0V ≤ VCM ≤ 1.7V, Over Temperature | 68 | |||||
+PSRR | Positive Power Supply Rejection Ratio | 1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/LMV824I |
75 | 85 | dB | |
1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/LMV824I, Over Temperature |
70 | |||||
LMV822-Q1 | 75 | 85 | ||||
−PSRR | Negative Power Supply Rejection Ratio | -1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/LMV824I |
73 | 85 | dB | |
-1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/LMV824I, Over Temperature |
70 | |||||
LMV822-Q1 | 73 | 85 | ||||
VCM | Input Common-Mode Voltage Range | For CMRR ≥ 50dB | –0.3 | –0.2 | V | |
1.9 | 2.0 | |||||
AV | Large Signal Voltage Gain | Sourcing, RL = 600Ω to 1.35V, VO = 1.35V to 2.2V; LMV821/822/824 |
90 | 100 | dB | |
Sourcing, RL = 600Ω to 1.35V, VO = 1.35V to 2.2V; LMV821/822/824, Over Temperature |
85 | |||||
LMV822-Q1/LMV824-Q1/LMV824I | 90 | 100 | ||||
Sinking, RL = 600Ω to 1.35V, VO = 1.35V to 0.5V LMV821/822/824 |
85 | 90 | dB | |||
Sinking, RL = 600Ω to 1.35V, VO = 1.35V to 0.5V LMV821/822/824, Over Temperature |
80 | |||||
LMV824I | 85 | 90 | ||||
LMV824I, Over Temperature | 78 | |||||
LMV822-Q1/LMV824-Q1 | 85 | 90 | ||||
Sourcing, RL =2kΩ to 1.35V, VO = 1.35V to 2.2V; LMV821/822/824 |
95 | 100 | dB | |||
Sourcing, RL =2kΩ to 1.35V, VO = 1.35V to 2.2V; LMV821/822/824, Over Temperature |
90 | |||||
LMV822-Q1/LMV824-Q1/LMV824I | 95 | 100 | ||||
Sinking, RL = 2kΩ to 1.35V, VO = 1.35V to 0.5V LMV821/822/824 |
90 | 95 | dB | |||
Sinking, RL = 2kΩ to 1.35V, VO = 1.35V to 0.5V LMV821/822/824, Over Temperature |
85 | |||||
LMV822-Q1/LMV824-Q1/LMV824I | 90 | 95 | ||||
V O | Output Swing | V+ = 2.7V, RL= 600Ω to 1.35V | 2.50 | 2.58 | V | |
0.13 | 0.20 | |||||
V+ = 2.7V, RL= 600Ω to 1.35V, Over Temp | 2.40 | 0.30 | ||||
V+ = 2.7V, RL= 2kΩ to 1.35V | 2.60 | 2.66 | V | |||
0.08 | 0.120 | |||||
V+ = 2.7V, RL= 2kΩ to 1.35V, Over Temp | 2.50 | 0.200 | ||||
IO | Output Current | Sourcing, VO = 0V | 12 | 16 | mA | |
Sinking, VO = 2.7V | 12 | 26 | ||||
IS | Supply Current | LMV821 (Single) | 0.22 | 0.3 | mA | |
LMV821, Over Temperature | 0.5 | |||||
LMV822 (Dual) | 0.45 | 0.6 | mA | |||
LMV822, Over Temperature | 0.8 | |||||
LMV824 (Quad) | 0.72 | 1.0 | mA | |||
LMV824, Over Temperature | 1.2 |
PARAMETER | CONDITION | MIN (3) | TYP (2) | MAX (3) | UNIT | |
---|---|---|---|---|---|---|
VOS | Input Offset Voltage | LMV821/822/822-Q1/824 | 1 | 3.5 | mV | |
LMV821/822/822-Q1/824, Over Temperature | 4 | |||||
LMV824-Q1/LMV824I | 1 | |||||
LMV824-Q1/LMV824I, Over Temperature | 5.5 | |||||
V O | Output Swing | V+ = 2.5V, RL = 600Ω to 1.25V | 2.30 | 2.37 | V | |
0.13 | 0.20 | |||||
V+ = 2.5V, RL = 600Ω to 1.25V, Over Temperature | 2.20 | 0.30 | ||||
V+ = 2.5V, RL = 2kΩ to 1.25V | 2.40 | 2.46 | V | |||
0.08 | 0.12 | |||||
V+ = 2.5V, RL = 2kΩ to 1.25V, Over Temperature | 2.30 | 0.20 |
PARAMETER | TEST CONDITIONS | MIN (3) | TYP (2) | MAX (3) | UNIT | |
---|---|---|---|---|---|---|
SR | Slew Rate | See (4) | 1.5 | V/μs | ||
GBW | Gain-Bandwdth Product | 5 | MHz | |||
Φm | Phase Margin | 61 | Deg. | |||
Gm | Gain Margin | 10 | dB | |||
Amp-to-Amp Isolation | See (5) | 135 | dB | |||
en | Input-Related Voltage Noise | f = 1 kHz, VCM = 1V | 28 | nV/√Hz | ||
in | Input-Referred Current Noise | f = 1 kHz | 0.1 | pA/√Hz | ||
THD | Total Harmonic Distortion | f = 1 kHz, AV = −2, RL = 10 kΩ, VO = 4.1 V PP |
0.01% |
PARAMETER | TEST CONDITIONS | MIN (3) | TYP (2) | MAX (3) | UNIT | |
---|---|---|---|---|---|---|
VOS | Input Offset Voltage | LMV821/822/822-Q1/824 | 1 | 3.5 | mV | |
LMV821/822/822-Q1/824, Over Temperature | 4.0 | |||||
LMV824-Q1/LMV824I | 1 | |||||
LMV824-Q1/ LMV824I, Over Temperature | 5.5 | |||||
TCVOS | Input Offset Voltage Average Drift | 1 | μV/°C | |||
IB | Input Bias Current | 40 | 100 | nA | ||
Over Temperature | 150 | |||||
IOS | Input Offset Current | 0.5 | 30 | nA | ||
Over Temperature | 50 | |||||
CMRR | Common Mode Rejection Ratio | 0V ≤ VCM ≤ 4.0V | 72 | 90 | dB | |
0V ≤ VCM ≤ 4.0V, Over Temperature | 70 | |||||
+PSRR | Positive Power Supply Rejection Ratio | 1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/824I |
85 | 75 | dB | |
1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/824I, Over Temperature |
70 | |||||
LMV822-Q1 | 75 | 85 | ||||
−PSRR | Negative Power Supply Rejection Ratio | -1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/824I |
73 | 85 | dB | |
-1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V LMV821/822/824/824-Q1/824I |
70 | |||||
LMV822-Q1 | 73 | 85 | ||||
VCM | Input Common-Mode Voltage Range | For CMRR ≥ 50dB | -0.3 | -0.2 | V | |
4.2 | 4.3 | V | ||||
AV | Large Signal Voltage Gain | Sourcing, RL = 600Ω to 2.5V, VO = 2.5V to 4.5V; LMV821/822/824 |
95 | 105 | dB | |
Sourcing, RL = 600Ω to 2.5V, VO = 2.5V to 4.5V; LMV821/822/824, Over Temperature |
90 | |||||
LMV822-Q1/LMV824-Q1/LMV824I | 95 | 105 | ||||
Sinking, RL = 600Ω to 2.5V, VO = 2.5V to 0.5V LMV821/822/824 |
95 | 105 | dB | |||
Sinking, RL = 600Ω to 2.5V, VO = 2.5V to 0.5V LMV821/822/824, Over Temperature |
90 | |||||
LMV824I | 95 | 105 | ||||
LMV824I, Over Temperature | 82 | |||||
LMV822-Q1/LMV824-Q1 | 95 | 105 | ||||
Sourcing, RL =2kΩ to 2.5V, VO = 2.5V to 4.5V; LMV821/822/824 |
95 | 105 | dB | |||
Sourcing, RL =2kΩ to 2.5V, VO = 2.5V to 4.5V; LMV821/822/824, Over Temperature |
90 | |||||
LMV822-Q1/LMV824-Q1/LMV824I | 95 | 105 | ||||
Sinking, RL = 2kΩ to 2.5V, VO = 2.5V to 0.5V LMV821/822/824 |
95 | 105 | dB | |||
Sinking, RL = 2kΩ to 2.5V, VO = 2.5V to 0.5V LMV821/822/824, Over Temperature |
90 | |||||
LMV822-Q1/LMV824-Q1/LMV824I | 95 | 105 | ||||
V O | Output Swing | V+ = 5V,RL = 600Ω to 2.5V | 4.75 | 4.84 | V | |
V+ = 5V,RL = 600Ω to 2.5V, Over Temperature | 4.70 | |||||
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I) | 4.84 | |||||
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I), Over Temperature | 4.60 | |||||
V+ = 5V,RL = 600Ω to 2.5V | 0.17 | 0.250 | V | |||
V+ = 5V,RL = 600Ω to 2.5V, Over Temperature | 0.30 | |||||
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I) | 0.17 | |||||
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I), Over Temperature | 0.40 | |||||
V+ = 5V, RL = 2kΩ to 2.5V | 4.85 | 4.90 | V | |||
0.10 | 0.15 | |||||
V+ = 5V, RL = 2kΩ to 2.5V, Over Temperature | 4.80 | 0.20 | ||||
IO | Output Current | Sourcing, VO = 0V | 20 | 45 | mA | |
Sourcing, VO = 0V, Over Temperature | 15 | |||||
Sourcing, VO = 0V LMV824I |
20 | 45 | mA | |||
Sourcing, VO = 0V LMV824I, Over Temperature |
10 | |||||
Sinking, VO = 5V | 20 | 40 | mA | |||
Sinking, VO = 5V, Over Temperature | 15 | |||||
Sinking, VO = 5V LMV824I |
20 | 40 | mA | |||
Sinking, VO = 5V LMV824I, Over Temperature |
10 | |||||
IS | Supply Current | LMV821 (Single) | 0.30 | 0.4 | mA | |
LMV821, Over Temperature | 0.6 | |||||
LMV822 (Dual) | 0.5 | 0.7 | mA | |||
LMV822, Over Temperature | 0.9 | |||||
LMV824 (Quad) | 1.0 | 1.3 | mA | |||
LMV824, Over Temperature | 1.5 | |||||
LMV824I (Quad) | 1.0 | 1.3 | mA | |||
LMV824I, Over Temperature | 1.6 |
PARAMETER | TEST CONDITIONS | MIN (3) | TYP (2) | MAX (3) | UNIT | |
---|---|---|---|---|---|---|
SR | Slew Rate | See (4) | 1.4 | 2.0 | V/μs min | |
GBW | Gain-Bandwdth Product | 5.6 | MHz | |||
Φm | Phase Margin | 67 | Deg. | |||
Gm | Gain Margin | 15 | dB | |||
Amp-to-Amp Isolation | See (5) | 135 | dB | |||
en | Input-Related Voltage Noise | f = 1 kHz, VCM = 1V | 24 | nV/√Hz | ||
in | Input-Referred Current Noise | f = 1 kHz | 0.25 | pA/√Hz | ||
THD | Total Harmonic Distortion | f = 1 kHz, AV = −2, RL = 10 kΩ, VO = 4.1 V PP |
0.01% |