SNAS665 May 2015 LMX2581E
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Vcc | Power supply voltage | –0.3 | 3.6 | V |
VIN | Input voltage to pins other than Vcc pins | –0.3 | (Vcc + 0.3) | V |
TL | Lead temperature (solder 4 sec.) | 260 | °C | |
TJ | Junction temperature | 150 | °C | |
VOSCin | Voltage on OSCin (Pin29) | ≤1.8 with Vcc Applied ≤1 with Vcc = 0 |
Vpp | |
Storage Temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2500 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1250 |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
Vcc | Power Supply Voltage | 3.15 | 3.3 | 3.45 | V |
TJ | Junction Temperature | 125 | °C | ||
TA | Ambient Temperature | -40 | 85 | °C |
THERMAL METRIC(1) | LMX2581E | UNIT | |
---|---|---|---|
DAP (WQFN) | |||
32 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 30 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | ||
RθJB | Junction-to-board thermal resistance | ||
ψJT | Junction-to-top characterization parameter | ||
ψJB | Junction-to-board characterization parameter | ||
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|---|---|
CURRENT CONSUMPTION | |||||||||
ICC | Entire chip supply current | One Output Enabled OUTx_PWR = 15 |
178 | mA | |||||
ICCCore | Supply current except for output buffers | Output Buffers and VCO Divider Disabled. | 134 | mA | |||||
ICCRFout | Additive current for each output buffer | OUTx_PWR = 15 | 44 | mA | |||||
ICCVCO_DIV | Additive VCO divider current | VCO Divider Enabled | 20 | mA | |||||
ICCPD | Power down current | Device Powered Down (CE Pin = LOW) |
7 | mA | |||||
OSCin REFERENCE INPUT | |||||||||
fOSCin | OSCin frequency range | Doubler Enabled | 5 | 250 | MHz | ||||
Doubler Disabled | 5 | 900 | |||||||
vOSCin | OSCin input voltage | AC Coupled | 0.4 | 1.7 | Vpp | ||||
SpurFoscin | Oscin spur | Foscin = 100 MHz, Offset = 100 MHz | -81 | dBc | |||||
PLL | |||||||||
fPD | Phase detector frequency | 200 | MHz | ||||||
KPD | Charge-pump gain | Gain = 1X | 110 | µA | |||||
Gain = 2X | 220 | ||||||||
... | ... | ||||||||
Gain = 31X | 3410 | ||||||||
PNPLL_1/f_Norm | Normalized PLL 1/f noise (1) |
Gain =31X Normalized to 1 GHz carrier and 10 kHz Offset |
–120.8 | dBc/Hz | |||||
PNPLL_FOM | PLL figure of merit (Normalized Noise Floor) (1) |
Gain =31X. Normalized to PLL1 and fPD=1Hz |
–229 | dBc/Hz | |||||
fRFin | External VCO input pin frequency | Internal VCOs Bypassed (OUTA_PD=OUTB_PD=1) |
0.5 | 2.2 | GHz | ||||
pRFin | External VCO input pin power | Internal VCOs Bypassed (OUTA_PD=OUTB_PD=1) |
0 | +8 | dBm | ||||
SpurFpd | Phase detector spurs (2) |
Fpd = 25 MHz | –85 | dBc | |||||
Fpd = 100 MHz | –81 | ||||||||
OUTPUTS | |||||||||
pRFoutA+/-
pRFoutB+/- |
Output power level(5)(5) | Inductor Pullup FOUT = 2.7 GHz |
OUTx_PWR=15 | 7.3 | dBm | ||||
OUTx_PWR=45 | 12 | ||||||||
H2RFoutX+/- | Second harmonic (6) |
FOUT = 2.7 GHz | OUTx_PWR=15 | –25 | dBc | ||||
VCO | |||||||||
fVCO | Before the VCO Divider | All VCO Cores Combined | 1880 | 3800 | MHz | ||||
KVCO | VCO gain | Vtune = 1.3 Volts |
Core 1 | 12 to 24 | MHz/V | ||||
Core 2 | 15 to 30 | ||||||||
Core 3 | 20 to 37 | ||||||||
Core 4 | 21 to 37 | ||||||||
ΔTCL | Allowable temperature drift (3) |
VCO not being re-calibrated | Fvco ≥2.5 GHz | –125 | +125 | °C | |||
Fvco < 2.5 GHz | –100 | +125 | |||||||
tVCOCal | VCO calibration time (4) |
fOSCin = 100 MHz fPD = 100 MHz Full Band Change 1880 — 3800 MHz |
No Pre-programming | 140 | µs | ||||
With Pre-programming | 10 | ||||||||
PNVCO | VCO phase noise (OUTx_PWR =15) |
fVCO = 1.9 GHz Core 1 |
10 kHz Offset | –85.4 | dBc/Hz | ||||
100 kHz Offset | –114.5 | ||||||||
1 MHz Offset | –137.0 | ||||||||
10 MHz Offset | –154.2 | ||||||||
40 MHz Offset | –156.7 | ||||||||
fVCO = 2.2 GHz Core 2 |
10 kHz Offset | –84.6 | dBc/Hz | ||||||
100 kHz Offset | –114.1 | ||||||||
1 MHz Offset | –137.5 | ||||||||
10 MHz Offset | –154.5 | ||||||||
40 MHz Offset | –156.1 | ||||||||
fVCO = 2.7 GHz Core 3 |
10 kHz Offset | –81.7 | dBc/Hz | ||||||
100 kHz Offset | –112.2 | ||||||||
1 MHz Offset | –136.0 | ||||||||
10 MHz Offset | –153.1 | ||||||||
40 MHz Offset | –155.0 | ||||||||
fVCO = 3.3 GHz Core 4 |
10 kHz Offset | –79.0 | dBc/Hz | ||||||
100 kHz Offset | –108.6 | ||||||||
1 MHz Offset | –132.6 | ||||||||
10 MHz Offset | –152.0 | ||||||||
40 MHz Offset | –155.0 | ||||||||
DIGITAL INTERFACE (DATA, CLK, LE, CE, MUXout, BUFEN, LD) | |||||||||
VIH | High-level input voltage | 1.4 | Vcc | V | |||||
VIL | Low level input voltage | 0.4 | V | ||||||
IIH | High-level input current | VIH = 1.75 V | –5 | 5 | µA | ||||
IIL | Low-level input current | VIL = 0 V | –5 | 5 | µA | ||||
VOH | High-level output voltage | IOH = –500 µA | 2 | V | |||||
VOL | Low-Level output voltage | IOL = –500 µA | 0 | 0.4 | V |
See Figure 1 | MIN | NOM | MAX | UNIT | |
---|---|---|---|---|---|
tES | Clock-to-enable low time | 35 | ns | ||
tCS | Data-to-clock set up time | 10 | ns | ||
tCH | Data-to-clock hold time | 10 | ns | ||
tCWH | Clock pulse width high | 25 | ns | ||
tCWL | Clock pulse width low | 25 | ns | ||
tCES | Enable-to-clock setup time | 10 | ns | ||
tEWH | Enable pulse width high | 10 | ns |