SNVS632S December 2009 – July 2017 LMZ14203
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN, RON to GND | –0.3 | 43.5 | V | |
EN, FB, SS to GND | –0.3 | 7 | V | |
Junction Temperature | 150 | °C | ||
Peak Reflow Case Temperature (30 sec) | 245 | °C | ||
Storage Temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | 6 | 42 | V | |
EN | 0 | 6.5 | V | |
Operation Junction Temperature | −40 | 125 | °C |
THERMAL METRIC(1) | LMZ14203 | UNIT | ||
---|---|---|---|---|
NDW (TO-PMOD) | ||||
7 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 4-layer JEDEC Printed Circuit Board, No air flow | 19.3 | °C/W |
2-layer JEDEC Printed Circuit Board, No air flow | 21.5 | |||
RθJC(top) | Junction-to-case (top) thermal resistance | No air flow | 1.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN(1) | TYP(2) | MAX(1) | UNIT | ||
---|---|---|---|---|---|---|---|
SYSTEM PARAMETERS | |||||||
Enable Control(3) | |||||||
VEN | EN threshold trip point | VEN rising | TJ = 25°C | 1.18 | V | ||
over the junction temperature (TJ) range of –40°C to +125°C | 1.1 | 1.25 | |||||
VEN-HYS | EN threshold hysteresis | VEN falling | 90 | mV | |||
Soft Start | |||||||
ISS | SS source current | VSS = 0V | TJ = 25°C | 8 | µA | ||
over the junction temperature (TJ) range of –40°C to +125°C | 5 | 11 | |||||
ISS-DIS | SS discharge current | –200 | µA | ||||
Current Limit | |||||||
ICL | Current limit threshold | DC average VIN= 12 V to 24 V |
TJ = 25°C | 4.2 | A | ||
over the junction temperature (TJ) range of –40°C to +125°C | 3.2 | 5.25 | |||||
ON/OFF Timer | |||||||
tON-MIN | ON timer minimum pulse width | 150 | ns | ||||
tOFF | OFF timer pulse width | 260 | ns | ||||
Regulation and Overvoltage Comparator | |||||||
VFB | In-regulation feedback voltage | VSS > 0.8 V TJ = –40°C to 125°C IO = 3 A |
TJ = 25°C | 0.804 | V | ||
over the junction temperature (TJ) range of –40°C to +125°C | 0.784 | 0.825 | |||||
VSS > 0.8 V TJ = 25°C IO = 10 mA |
0.786 | 0.802 | 0.818 | V | |||
VFB-OV | Feedback overvoltage protection threshold | 0.92 | V | ||||
IFB | Feedback input bias current | 5 | nA | ||||
IQ | Nonswitching Input Current | VFB= 0.86 V | 1 | mA | |||
ISD | Shut Down Quiescent Current | VEN= 0 V | 25 | μA | |||
Thermal Characteristics | |||||||
TSD | Thermal Shutdown | Rising | 165 | °C | |||
TSD-HYST | Thermal shutdown hysteresis | Falling | 15 | °C | |||
PERFORMANCE PARAMETERS | |||||||
ΔVO | Output Voltage Ripple | 8 | mV PP | ||||
ΔVO/ΔVIN | Line Regulation | VIN = 12 V to 42 V, IO= 3 A | 0.01% | ||||
ΔVO/IOUT | Load Regulation | VIN = 24 V | 1.5 | mV/A | |||
η | Efficiency | VIN = 24 V VO = 3.3 V IO = 1 A | 92% | ||||
η | Efficiency | VIN = 24 V VO = 3.3 V IO = 3 A | 85% |