SNVSB11B June   2018  – May 2019 LMZM33606

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
    1.     Simplified Schematic
  3. 3 Description
    1.     Minimum Solution Size
    2.     Typical Efficiency (Auto Mode)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics (VIN = 12 V)
    8. 6.8 Typical Characteristics (VIN = 24 V)
    9. 6.9 Typical Characteristics (VIN = 36 V)
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Adjusting the Output Voltage
      2. 7.3.2  Input Capacitor Selection
      3. 7.3.3  Output Capacitor Selection
      4. 7.3.4  Transient Response
      5. 7.3.5  Feed-Forward Capacitor
      6. 7.3.6  Switching Frequency (RT)
      7. 7.3.7  Synchronization (SYNC/MODE)
      8. 7.3.8  Output Enable (EN)
      9. 7.3.9  Programmable System UVLO (EN)
      10. 7.3.10 Internal LDO and BIAS_SEL
      11. 7.3.11 Power Good (PGOOD) and Power Good Pull-Up (PGOOD_PU)
      12. 7.3.12 Mode Select (Auto or FPWM)
      13. 7.3.13 Soft Start and Voltage Tracking
      14. 7.3.14 Voltage Dropout
      15. 7.3.15 Overcurrent Protection (OCP)
      16. 7.3.16 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active Mode
      2. 7.4.2 Auto Mode
      3. 7.4.3 FPWM Mode
      4. 7.4.4 Shutdown Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Voltage Setpoint
        2. 8.2.2.2 Setting the Switching Frequency
        3. 8.2.2.3 Input Capacitors
        4. 8.2.2.4 Output Capacitor Selection
        5. 8.2.2.5 Feed-Forward Capacitor (CFF)
        6. 8.2.2.6 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Theta JA vs PCB Area
    4. 10.4 Package Specifications
    5. 10.5 EMI
      1. 10.5.1 EMI Plots
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RLX|41
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) LMZM33606 UNIT
RLX(B2QFN)
41 PINS
RθJA Junction-to-ambient thermal resistance (2) 13.9 °C/W
ψJT Junction-to-top characterization parameter (3) 1.2 °C/W
ψJB Junction-to-board characterization parameter (4) 6.2 °C/W
TSHDN Thermal Shutdown Temperature 160 °C
Thermal Shutdown Hysteresis 25 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance, RθJA, applies to devices soldered directly to a 75 mm x 75 mm double-sided PCB with 2 oz. copper and natural convection cooling. Additional airflow reduces RθJA.
(3) The junction-to-top board characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (section 6 and 7). TJ = ψJT × Pdis + TT; where Pdis is the power dissipated in the device and TT is the temperature of the top of the device.
(4) The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB × Pdis + TB; where Pdis is the power dissipated in the device and TB is the temperature of the board 1mm from the device.