SNVS128L March 2000 – December 2023 LP2982
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
∆VOUT | Output voltage tolerance | IL = 1 mA | Legacy chip (standard grade) | –1.5 | 1.5 | % | |
Legacy chip (A grade) | –1.0 | 1.0 | |||||
New chip | –0.5 | 0.5 | |||||
1 mA < IL < 50 mA | Legacy chip (standard grade) | –2 | 2 | ||||
Legacy chip (A grade) | –1.5 | 1.5 | |||||
New chip | –0.5 | 0.5 | |||||
1 mA < IL < 50 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip (standard grade) | –3.5 | 3.5 | ||||
Legacy chip (A grade) | –2 | 2 | |||||
New chip | –1 | 1 | |||||
ΔVOUT(ΔVIN) | Line regulation | VO(NOM) + 1 V < VIN < 16 V | Legacy chip | 0.007 | 0.014 | %/V | |
New chip | 0.002 | 0.014 | |||||
VO(NOM) + 1 V < VIN < 16 V, –40°C ≤ TJ ≤ 125°C | Legacy chip | 0.007 | 0.032 | ||||
New chip | 0.002 | 0.032 | |||||
ΔVOUT(ΔILOAD) | Load regulation | 1 mA < IL < 50 mA, –40°C ≤ TJ ≤ 125°C, VIN = VO(NOM)+0.5 V | New chip | 0.1 | 0.5 | %/A | |
VDO | Dropout voltage(1) | IOUT = 0 mA | Legacy chip | 1 | 3 | mV | |
New chip | 1 | 2.75 | |||||
IOUT = 0 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 5 | |||||
New chip | 3 | ||||||
IOUT = 1 mA | Legacy chip | 7 | 10 | ||||
New chip | 11.5 | 14 | |||||
IOUT = 1 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 15 | |||||
New chip | 17 | ||||||
IOUT = 10 mA | Legacy chip | 40 | 60 | ||||
New chip | 98 | 115 | |||||
IOUT = 10 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 90 | |||||
New chip | 148 | ||||||
IOUT = 50 mA | Legacy chip | 120 | 150 | ||||
New chip | 120 | 145 | |||||
IOUT = 50 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 225 | |||||
New chip | 184 | ||||||
IOUT = 80 mA | Legacy chip | 180 | 225 | ||||
New chip | 150 | 165 | |||||
IOUT = 80 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 325 | |||||
New chip | 204 | ||||||
IGND | GND pin current | IOUT = 0 mA | Legacy chip | 65 | 95 | µA | |
New chip | 69 | 95 | |||||
IOUT = 0 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 125 | |||||
New chip | 123 | ||||||
IOUT = 1 mA | Legacy chip | 80 | 110 | ||||
New chip | 78 | 110 | |||||
IOUT = 1 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 170 | |||||
New chip | 140 | ||||||
IOUT = 10 mA | Legacy chip | 140 | 220 | µA | |||
New chip | 175 | 210 | |||||
IOUT = 10 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 460 | |||||
New chip | 250 | ||||||
IOUT = 50 mA | Legacy chip | 375 | 600 | µA | |||
New chip | 380 | 440 | |||||
IOUT = 50 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 1200 | µA | ||||
New chip | 650 | µA | |||||
IOUT = 80 mA | Legacy chip | 525 | 750 | µA | |||
New chip | 575 | 720 | µA | ||||
IOUT = 80 mA, –40°C ≤ TJ ≤ 125°C | Legacy chip | 1400 | µA | ||||
900 | µA | ||||||
VON/OFF < 0.3 V, VIN = 16 V | Legacy chip | 0.01 | 0.8 | µA | |||
New chip | 1.25 | 1.75 | µA | ||||
VON/OFF < 0.15 V, VIN = 16 V, –40°C ≤ TJ ≤ 125°C | Legacy chip | 0.1 | 2 | µA | |||
New chip | 1.12 | 2.75 | µA | ||||
VUVLO+ | Rising bias supply UVLO | VIN rising, –40°C ≤ TJ ≤ 125°C | New chip | 2.2 | 2.4 | V | |
VUVLO- | Falling bias supply UVLO | VIN falling, –40°C ≤ TJ ≤ 125°C | 1.9 | V | |||
VUVLO(HYST) | UVLO hysteresis | –40°C ≤ TJ ≤ 125°C | 0.130 | V | |||
IO(MAX) | Short Output Current | RL = 0 Ω (steady state) | Legacy chip | 150 | mA | ||
New chip | 150 | mA | |||||
IO(PK) | Peak Output Current | VOUT ≥ VO(NOM) –5% (steady state) | Legacy chip | 100 | 150 | mA | |
New chip | 100 | 150 | mA | ||||
VON/OFF | ON/OFF input voltage | Low = Output OFF | Legacy chip | 0.55 | V | ||
New chip | 0.72 | ||||||
Low = Output OFF, VOUT + 1 < VIN < 16 V, –40°C ≤ TJ ≤ 125°C | Legacy chip | 0.15 | |||||
New chip | 0.15 | ||||||
High = Output ON | Legacy chip | 1.4 | |||||
New chip | 0.85 | ||||||
High = Output ON, VOUT + 1 < VIN < 16 V, –40°C ≤ TJ ≤ 125°C | Legacy chip | 1.6 | |||||
New chip | 1.6 | ||||||
ION/OFF | ON/OFF input current | VON/OFF = 0 V | Legacy chip | 0.01 | µA | ||
New chip | 0.42 | ||||||
VON/OFF = 0 V, VOUT + 1 < VIN < 16 V, –40°C ≤ TJ ≤ 125°C | Legacy chip | –2 | µA | ||||
New chip | –0.9 | µA | |||||
VON/OFF = 5 V | Legacy chip | 5 | µA | ||||
New chip | 0.011 | µA | |||||
VON/OFF = 5 V, VOUT + 1 < VIN < 16 V, –40°C ≤ TJ ≤ 125°C | Legacy chip | 15 | µA | ||||
New chip | 2.20 | µA | |||||
ΔVO/ΔVIN | Ripple rejection | f = 1 kHz, CBYPASS = 10 nF, COUT = 10 µF | Legacy chip | 45 | dB | ||
New chip | 78 | ||||||
f = 100 kHz, CBYPASS = 10 nF , ILOAD = 50 mA | 45 | dB | |||||
Vn | Output noise voltage | Bandwidth = 300 Hz to 50 kHz, CNR/SS = 10 nF, COUT = 2.2 µF, VOUT = 1.8 V, ILOAD = 150 mA | Legacy chip | 30 | µVRMS | ||
New chip | 30 | ||||||
Bandwidth = 10 Hz to 100 kHz, CNR/SS = 10 nF, COUT = 2.2 µF, VOUT = 3.3 V, ILOAD = 150 mA | 50 | ||||||
Tsd+ | Thermal shutdown threshold | Shutdown, temperature increasing | New chip | 170 | °C | ||
Tsd- | Reset, temperature decreasing | 150 |