SNVS174I February 2003 – February 2015 LP3852 , LP3855
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Lead temperature (soldering, 5 sec.) | 260 | °C | ||
Power dissipation(2) | Internally limited | |||
Input supply voltage (survival) | –0.3 | 7.5 | V | |
Shutdown input voltage (survival) | –0.3 | 7.5 | ||
Output voltage (survival)(3), (4) | –0.3 | 6 | ||
IOUT (survival) | Short-circuit protected | |||
Maximum voltage for ERROR pin | VIN | |||
Maximum voltage for SENSE pin | VOUT | |||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Input supply voltage(1) | 2.5 | 7 | V | ||
Shutdown input voltage | −0.3 | 7 | |||
Maximum operating current (DC) | 1.5 | A | |||
Junction temperature | −40 | 125 | °C |
THERMAL METRIC(1) | LP3852/LP3855 | UNIT | |||
---|---|---|---|---|---|
NDC | KTT | NDH | |||
5 PINS | 5 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance, High-K | 65.2 | 40.3 | 32 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 47.2 | 43.4 | 43.8 | |
RθJB | Junction-to-board thermal resistance | 9.9 | 23.1 | 18.6 | |
ψJT | Junction-to-top characterization parameter | 3.4 | 11.5 | 8.8 | |
ψJB | Junction-to-board characterization parameter | 9.7 | 22 | 18 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 1 | 1.2 |
PARAMETER | TEST CONDITIONS | MIN(2) | TYP(1) | MAX(2) | UNIT | |
---|---|---|---|---|---|---|
VOUT | Output voltage tolerance(3) | VOUT +1 V ≤ VIN ≤ 7 V 10 mA ≤ IOUT ≤ 1.5 A |
–1.5% | 0 | 1.5% | |
For –40°C ≤ TJ ≤ 125°C | –3% | 3% | ||||
ΔVOUT/ΔVIN | Output voltage line regulation(3) | VOUT +1 V ≤ VIN ≤ 7 V | 0.02% | |||
For –40°C ≤ TJ ≤ 125°C | 0.06% | |||||
ΔVOUT/ΔIOUT | Output voltage load regulation(3) | 10 mA ≤ IOUT ≤ 1.5 A | 0.06% | |||
For –40°C ≤ TJ ≤ 125°C | 0.12% | |||||
VIN - VOUT | Dropout voltage TO-263 and TO-220(4) |
IOUT = 150 mA | 24 | 35 | mV | |
For –40°C ≤ TJ ≤ 125°C | 45 | |||||
IOUT = 1.5A | 240 | 280 | ||||
For –40°C ≤ TJ ≤ 125°C | 380 | |||||
Dropout voltage SOT(4), (5) |
IOUT = 150mA | 26 | 35 | |||
For –40°C ≤ TJ ≤ 125°C | 45 | |||||
IOUT = 1.5 A | 260 | 320 | ||||
For –40°C ≤ TJ ≤ 125°C | 435 | |||||
IGND | Ground pin current in normal operation mode | IOUT = 150 mA | 3 | 9 | mA | |
For –40°C ≤ TJ ≤ 125°C | 10 | |||||
IOUT = 1.5 A | 3 | 9 | ||||
For –40°C ≤ TJ ≤ 125°C | 10 | |||||
IGND | Ground pin current in shutdown mode | VSD ≤ 0.3V | 0.01 | 10 | µA | |
-40°C ≤ TJ ≤ 85°C | 50 | |||||
IOUT(PK) | Peak output current | VO ≥ VO(NOM) – 4% | 1.8 | A | ||
SHORT CIRCUIT PROTECTION | ||||||
ISC | Short circuit current | 3.2 | A | |||
SHUTDOWN INPUT | ||||||
VSDT | Shutdown threshold | VSDT Rising from 0.3 V until Output = ON |
1.3 | V | ||
For –40°C ≤ TJ ≤ 125°C | 2 | |||||
VSDT Falling from 2 V until Output = OFF |
1.3 | |||||
For –40°C ≤ TJ ≤ 125°C | 0.3 | |||||
TdOFF | Turnoff delay | IOUT = 1.5 A | 20 | µs | ||
TdON | Turnon delay | IOUT = 1.5 A | 25 | µs | ||
ISD | SD input current | VSD = VIN | 1 | nA | ||
ERROR PIN | ||||||
VT | Threshold | See(6) | 10% | |||
For –40°C ≤ TJ ≤ 125°C | 5% | 16% | ||||
VTH | Threshold hysteresis | See(6) | 5% | |||
For –40°C ≤ TJ ≤ 125°C | 2% | 8% | ||||
VEF(Sat) | ERROR pin saturation | Isink = 100 µA | 0.02 | V | ||
For –40°C ≤ TJ ≤ 125°C | 0.1 | |||||
Td | Flag reset delay | 1 | µs | |||
Ilk | ERROR pin leakage current | 1 | nA | |||
Imax | ERROR pin sink current | VError = 0.5 V | 1 | mA | ||
AC PARAMETERS | ||||||
PSRR | Ripple rejection | VIN = VOUT + 1 V COUT = 10 µF VOUT = 3.3V, f = 120 Hz |
73 | dB | ||
VIN = VOUT + 0.5 V COUT = 10 µF VOUT = 3.3V, f = 120 Hz |
57 | |||||
ρn(l/f) | Output noise density | f = 120 Hz | 0.8 | µV | ||
en | Output noise voltage | BW = 10Hz – 100 kHz VOUT = 2.5 V |
150 | µV (rms) | ||
BW = 300 Hz – 300 kHz VOUT = 2.5 V |
100 |
CIN = COUT = 100 µF, OSCON | ||
CIN = COUT = 100 µF, Tantalum | ||
CIN = 2 X 10 µF Ceramic | ||||
COUT = 2 X 10µF Ceramic | ||||
IOUT = 1.5 A | ||
CIN = COUT = 100 µF, POSCAP | ||
CIN = 2 X 10 µF Ceramic | ||
COUT = 2 X 10µF Ceramic | ||