SNOSCT6F March 2013 – January 2017 LP38798
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
VIN, VIN(CP) | –0.3 | 22 | V |
VOUT, VOUT(FB) | –0.3 | VIN + 0.3 | V |
VSET | –0.3 | VIN + 0.3 | V |
VFB | –0.3 | VIN + 0.3 | V |
VEN | –0.3 | 6 | V |
Power dissipation(2) | Internally Limited | ||
IOUT (Survival) | Internally Limited | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±250 |
MIN | MAX | UNIT | |
---|---|---|---|
Input voltage, VIN | 3 | 20 | V |
Output voltage, VOUT | 1.2 | (VIN – VDO) | V |
Enable voltage, VEN | 0 | 5 | V |
Junction temperature, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | LP38798 | UNIT | |
---|---|---|---|
DNT (WSON) | |||
12 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 35.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 29.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 12.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 12.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN(1) | TYP(2) | MAX(1) | UNIT | |
---|---|---|---|---|---|---|
VFB | Feedback voltage | VIN = 5.5 V TJ = 25°C |
1.188 | 1.2 | 1.212 | V |
5.5 V ≤ VIN ≤ 20 V | 1.176 | 1.2 | 1.224 | |||
VOS | VOUT – VSET | 0 | 3.5 | 16 | mV | |
IFB | Feedback pin current | VFB = 1.2 V | 0 | 1 | µA | |
ISET | SET pin internal current sink | VIN = 3 V, VSET = 2.5 V | 46 | μA | ||
VIN = 5.5 V, VSET = 5 V | 25.2 | 52 | 67.8 | |||
VIN = 12.5 V, VSET = 12 V | 71 | |||||
ΔVOUT / ΔVIN | Line regulation(3) | 5.5 V ≤ VIN ≤ 20 V IOUT = 10 mA |
0.005 | %/V | ||
ΔVOUT / ΔIOUT | Load regulation(4) | VIN = 5.5 V 10 mA ≤ IOUT ≤ 800 mA |
–0.2 | %/A | ||
VDO | Dropout voltage(5) | IOUT = 800 mA | 200 | 420 | mV | |
UVLO | Undervoltage lock-out | VIN Rising until output is On | 2.47 | 2.65 | 2.83 | V |
ΔUVLO | UVLO hysteresis | VIN Falling from > UVLO threshold until output is Off | 180 | mV | ||
IGND | Ground pin current(6) | IOUT = 800 mA | 1.4 | 2.25 | mA | |
VIN = 20 V, IOUT = 800 mA | 1.6 | 2.51 | ||||
IQ | Ground pin current, quiescent(6) | IOUT = 0 mA | 1.4 | 2.1 | mA | |
VIN = 20 V, IOUT = 0 mA | 1.5 | 2.2 | ||||
ISD | Ground pin current, shutdown(6) | VEN = 0 V | 9 | 20 | µA | |
VIN = 20 V, VEN = 0 V | 12 | 40 | ||||
ISC | Short-circuit current | RLOAD = 0 Ω | 850 | 1200 | 1600 | mA |
ΔVCP | VCP – VIN | 2.8 | V | |||
VIN = 20 V | 2.3 | |||||
tSTART | Start-up time | From VEN > VEN(ON) to VOUT ≥ 98% of VOUT(NOM) | 155 | 300 | µs | |
PSRR | Power Supply Rejection Ratio | VOUT = 1.2 V, f = 10 kHz | 110 | dB | ||
VOUT = 5 V, f = 10 kHz | 90 | |||||
VOUT = 1.2 V, f = 100 kHz | 90 | |||||
VOUT = 5 V, f = 100 kHz | 60 | |||||
VOUT = 1.2 V, f = 1 MHz | 70 | |||||
VOUT = 5 V, f = 1 MHz | 60 | |||||
eN | Output noise voltage (RMS) | VIN = 3 V, VOUT = 1.2 V COUT = 1 µF X7R BW = 10 Hz to 100 kHz |
4.96 | µV(RMS) | ||
VIN = 3 V, VOUT = 1.2 V BW = 10 Hz to 100 kHz |
5.21 | |||||
VIN = 3 V, VOUT = 1.2 V BW = 10 Hz to 10 MHz |
11.53 | |||||
VIN = 6 V, VOUT = 5 V COUT = 1 µF X7R BW = 10 Hz to 100 kHz |
5.38 | |||||
VIN = 6 V, VOUT = 5 V BW = 10 Hz to 100 kHz |
5.43 | |||||
VIN = 6 V, VOUT = 5 V BW = 10 Hz to 10 MHz |
11.58 | |||||
ENABLE INPUT | ||||||
VEN(ON) | Enable ON threshold voltage | VEN rising from 500 mV until Output is ON | 1.14 | 1.24 | 1.34 | V |
ΔVEN | Enable threshold voltage hysteresis | VEN falling from VEN(ON) | 110 | mV | ||
IEN(IL) | EN pin pullup current | VEN = 500 mV | 2 | 3 | µA | |
IEN(IH) | EN pin pullup current | VEN = 2 V | 2 | 3 | ||
VEN(CLAMP) | Enable pin clamp voltage | EN pin = Open | 5 | V | ||
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown | Junction temperature (TJ) rising | 170 | °C | ||
ΔTSD | Thermal shutdown hysteresis | Junction temperature (TJ) falling from TSD | 12 |