SNOS405B November   1999  – May 2017 MAX660

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 MAX660 Test Circuit
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Voltage Inverter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Capacitor Selection
          2. 9.2.1.2.2 Paralleling Devices
          3. 9.2.1.2.3 Cascading Devices
          4. 9.2.1.2.4 Regulating Output Voltage
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Positive Voltage Doubler
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
    3. 9.3 Split V+ in Half
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

(1)(2)
MIN MAX UNIT
Supply voltage (V+ to GND, or GND to OUT) 6 V
LV (OUT − 0.3 V) GND + 3 V)
FC, OSC The least negative of (OUT − 0.3 V)(V+ − 6 V) to (V+ 0.3 V)
V+ and OUT continuous output current 120 mA
Output short-circuit duration to GND(3) 1 sec
Power dissipation, TA = 25°C(4) 735 mW
TJ, maximum(4) 150 °C
Operating junction temperature −40 85 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and must be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.
(4) The maximum allowable power dissipation is calculated by using PD_MAX = (TJ_MAX − TA) / RθJA, where TJ_MAX is the maximum junction temperature, TA is the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V+ (supply voltage) Inverter, LV = open 3.5 5.5 V
Inverter, LV = GND 1.5 5.5
Doubler, LV = out 2.5 5.5
Junction temperature (TJ) –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) MAX660 UNIT
SOIC (D)
8 PINS
RθJA Junction-to-ambient thermal resistance 114.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 61.4 °C/W
RθJB Junction-to-board thermal resistance 55.5 °C/W
ψJT Junction-to-top characterization parameter 9.8 °C/W
ψJB Junction-to-board characterization parameter 54.9 °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

6.5 Electrical Characteristics

Unless otherwise specified: Limits apply for TJ = 25°C, V+ = 5 V, FC = open, C1 = C2 = 150 μF.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V+(3) Supply voltage RL = 1 kΩ Inverter LV = open(2),
TJ = –40°C to 85°C		 3.5 5.5 V
Inverter, LV = GND,
TJ = –40°C to 85°C		 1.5 5.5
Doubler, LV = OUT,
TJ = –40°C to 85°C		 2.5 5.5
IQ Supply current No load, LV = open FC = open 0.12 mA
FC = open,
TJ = –40°C to 85°C		 0.5
FC = V+ 1
FC = V+,
TJ = –40°C to 85°C		 3
IL Output current TA ≤ 85°C, OUT ≤ −4 V 100 mA
TA > 85°C, OUT ≤ −3.8 V 100
ROUT Output resistance(3) IL = 100 mA TA ≤ 85°C 6.5 10 Ω
TJ = –40°C to 85°C 10
TA > 85°C, TJ = –40°C to 85°C 12
ƒOSC Oscillator frequency OSC = open FC = open 10 kHz
FC = open, TJ = –40°C to 85°C 5
FC = V+ 80
FC = V+, TJ = –40°C to 85°C 40
IOSC OSC input current FC = open ±2 µA
FC = V+ ±16
PEFF Power efficiency RL (1 kΩ) between V+ and OUT 98%
RL (1 kΩ) between V+ and OUT
TJ = –40°C to 85°C		 96%
RL (500 Ω) between GND and OUT 96%
RL (500 Ω) between GND and OUT
TJ = –40°C to 85°C		 92%
IL = 100 mA to GND 88%
VOEFF Voltage conversion efficiency No load 99.96%
No load, TJ = –40°C to 85°C 99%
(1) In the test circuit, capacitors C1 and C2 are 0.2-Ω maximum ESR capacitors. Capacitors with higher ESR increase output resistance, reduce output voltage, and efficiency.
(2) The minimum limit for this parameter is different from the limit of 3 V for the industry-standard 660 product. For inverter operation with supply voltage below 3.5 V, connect the LV pin to GND.
(3) Specified output resistance includes internal switch resistance and capacitor ESR.

6.6 Typical Characteristics

Circuit of Voltage Inverter and Positive Voltage Doubler.
MAX660 10089836.png Figure 1. Supply Current vs Supply Voltage
MAX660 10089838.png Figure 3. Output Source Resistance vs Supply Voltage
MAX660 10089840.png Figure 5. Efficiency vs Load Current
MAX660 10089813.png Figure 7. Efficiency vs Oscillator Frequency
MAX660 10089816.png
FC = V+
Figure 9. Oscillator Frequency Supply Voltage
MAX660 10089818.png
FC = V+
Figure 11. Oscillator Frequency vs Temperature
MAX660 10089837.png Figure 2. Supply Current vs Oscillator Frequency
MAX660 10089839.png Figure 4. Output Source Resistance vs Temperature
MAX660 10089841.png Figure 6. Output Voltage Drop vs Load Current
MAX660 10089814.png Figure 8. Output Voltage vs Oscillator Frequency
MAX660 10089817.png
FC = Open
Figure 10. Oscillator Frequency vs Supply Voltage
MAX660 10089819.png
FC = Open
Figure 12. Oscillator Frequency vs Temperature