SLLSFQ7 November 2023 MCF8329A
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (PVDD, GVDD, AVDD, DVDD, VREG, GCTRL) | ||||||
IPVDDQ | PVDD sleep mode current | VPVDD = 24V, VSPEED/WAKE = 0, TA = 25 °C, AVDD connected to VREG | 3 | 5 | µA | |
VSPEED/WAKE = 0, TA = 125 °C, AVDD connected to VREG | 3.5 | 6 | µA | |||
IPVDDS | PVDD standby mode current | VPVDD = 24 V, VSPEED/WAKE < VEN_SB, DRVOFF = LOW, TA = 25 °C, AVDD connected to VREG | 25 | 28 | mA | |
VSPEED/WAKE < VEN_SB, DRVOFF = LOW, AVDD connected to VREG | 25 | 28 | mA | |||
IPVDD | PVDD active mode current | VPVDD = 24 V, VSPEED/WAKE > VEX_SL, PWM_FREQ_OUT = 0011b (25 kHz), TJ = 25 °C, No FETs and motor connected, AVDD connected to VREG | 28 | 30 | mA | |
VPVDD = 24 V, VSPEED/WAKE > VEX_SL, PWM_FREQ_OUT = 0011b (25 kHz), No FETs and motor connected, AVDD connected to VREG | 28 | 30 | mA | |||
VPVDD = 8 V, VSPEED/WAKE > VEX_SL, PWM_FREQ_OUT = 0011b (25 kHz), TJ = 25 °C, No FETs and motor connected, AVDD not connected to VREG, VREG = 3.3V external | 8.5 | 14.1 | mA | |||
VPVDD = 24 V, VSPEED/WAKE > VEX_SL, PWM_FREQ_OUT = 0011b (25 kHz), No FETs and motor connected, AVDD not connected to VREG, VREG = 3.3V external | 8.5 | 11.1 | mA | |||
IVREG | VREG pin active mode current | VSPEED/WAKE > VEX_SL, PWM_FREQ_OUT = 0011b (25 kHz), VREG connected to AVDD | 25 | mA | ||
ILBSx | Bootstrap pin leakage current | VBSTx = VSHx = 60V, VGVDD = 0V, VSPEED/WAKE = LOW | 5 | 10 | 16 | µA |
ILBS_TRAN | Bootstrap pin active mode transient leakage current | GLx = GHx = Switching at 20kHz, No FETs connected | 60 | 115 | 300 | µA |
VGVDD_RT | GVDD Gate driver regulator voltage (Room Temperature) | VPVDD ≥ 40 V, IGS = 10 mA, TJ= 25°C | 11.8 | 13 | 15 | V |
22 V ≤VPVDD ≤ 40 V, IGS = 30 mA, TJ= 25°C | 11.8 | 13 | 15 | V | ||
8 V ≤VPVDD ≤ 22 V, IGS = 30 mA, TJ= 25°C | 11.8 | 13 | 15 | V | ||
6.75 V ≤VPVDD ≤ 8 V, IGS = 10 mA, TJ= 25°C | 11.8 | 13 | 14.5 | V | ||
4.5 V ≤VPVDD ≤ 6.75 V, IGS = 10 mA, TJ= 25°C | 2*VPVDD - 1 | 13.5 | V | |||
VGVDD | GVDD Gate driver regulator voltage | VPVDD ≥ 40 V, IGS = 10 mA | 11.5 | 15.5 | V | |
22 V ≤VPVDD ≤ 40 V, IGS = 30 mA | 11.5 | 15.5 | V | |||
8 V ≤VPVDD ≤ 22 V; IGS = 30 mA | 11.5 | 15.5 | V | |||
6.75 V ≤VPVDD ≤ 8 V, IGS = 10 mA | 11.5 | 14.5 | V | |||
4.5 V ≤VPVDD ≤ 6.75 V, IGS = 10 mA | 2*VPVDD - 1.4 | 13.5 | V | |||
VAVDD_RT | AVDD Analog regulator voltage (Room Temperature) | VPVDD ≥ 6 V, 0 mA ≤ IAVDD ≤ 30 mA, TJ= 25°C | 3.26 | 3.3 | 3.33 | V |
VPVDD ≥ 6 V, 30 mA ≤ IAVDD ≤ 80 mA, TJ= 25°C | 3.2 | 3.3 | 3.4 | V | ||
VPVDD ≤ 6 V, 0 mA ≤ IAVDD ≤ 50 mA, TJ= 25°C | 3.13 | 3.3 | 3.46 | V | ||
VDVDD | Digital regulator voltage | VREG = 3.3V | 1.4 | 1.55 | 1.65 | V |
VAVDD | AVDD Analog regulator voltage | VPVDD ≥ 6 V, 0 mA ≤ IAVDD ≤ 80 mA | 3.2 | 3.3 | 3.4 | V |
VPVDD ≤ 6 V, 0 mA ≤ IAVDD ≤ 50 mA | 3.125 | 3.3 | 3.5 | V | ||
VGCTRL | Gate control volatge | VPVDD > 4.5 V | 4.9 | 5.7 | 6.5 | V |
GATE DRIVERS (GHx, GLx, SHx, SLx) | ||||||
VGSHx_LO | High-side gate drive low level voltage | IGHx = -100 mA; VGVDD = 12V; No FETs connected | 0.05 | 0.11 | 0.24 | V |
VGSHx_HI | High-side gate drive high level voltage (VBSTx - VGHx) | IGHx = 100 mA; VGVDD = 12V; No FETs connected | 0.28 | 0.44 | 0.82 | V |
VGSLx_LO | Low-side gate drive low level voltage | IGLx = -100 mA; VGVDD = 12V; No FETs connected | 0.05 | 0.11 | 0.27 | V |
VGSLx_HI | Low-side gate drive high level voltage (VGVDD - VGLx) | IGLx = 100 mA; VGVDD = 12V; No FETs connected | 0.28 | 0.44 | 0.82 | V |
RDS(ON)_PU_HS | High-side pullup switch resistance | IGHx = 100 mA; VGVDD= 12V | 2.7 | 4.5 | 8.4 | Ω |
RDS(ON)_PD_HS | High-side pulldown switch resistance | IGHx = 100 mA; VGVDD = 12V | 0.5 | 1.1 | 2.4 | Ω |
RDS(ON)_PU_LS | Low-side pullup switch resistance | IGLx = 100 mA; VGVDD = 12V | 2.7 | 4.5 | 8.3 | Ω |
RDS(ON)_PD_LS | Low-side pulldown switch resistance | IGLx = 100 mA; VGVDD = 12V | 0.5 | 1.1 | 2.8 | Ω |
IDRIVEP_HS | High-side peak source gate current | VGSHx = 12V | 550 | 1000 | 1575 | mA |
IDRIVEN_HS | High-side peak sink gate current | VGSHx = 0V | 1150 | 2000 | 2675 | mA |
IDRIVEP_LS | Low-side peak source gate current | VGSLx = 12V | 550 | 1000 | 1575 | mA |
IDRIVEN_LS | Low-side peak sink gate current | VGSLx = 0V | 1150 | 2000 | 2675 | mA |
RPD_LS | Low-side passive pull down | GLx to LSS | 80 | 100 | 120 | kΩ |
RPDSA_HS | High-side semiactive pull down | GHx to SHx, VGSHx = 2V | 8 | 10 | 12.5 | kΩ |
BOOTSTRAP DIODES | ||||||
VBOOTD | Bootstrap diode forward voltage | IBOOT = 100 µA | 0.8 | V | ||
IBOOT = 100 mA | 1.6 | V | ||||
RBOOTD | Bootstrap dynamic resistance (ΔVBOOTD/ΔIBOOT) | IBOOT = 100 mA and 50 mA | 4.5 | 5.5 | 9 | Ω |
LOGIC-LEVEL INPUTS (BRAKE, DIR, EXT_CLK, SCL, SDA, SPEED/WAKE) | ||||||
VIL | Input logic low voltage | AVDD = 3 to 3.6 V | 0.25*AVDD | V | ||
VIH | Input logic high voltage | AVDD = 3 to 3.6 V | 0.65*AVDD | V | ||
VHYS | Input hysteresis | 50 | 500 | 800 | mV | |
IIL | Input logic low current | AVDD = 3 to 3.6 V | -0.15 | 0.15 | µA | |
IIH | Input logic high current | AVDD = 3 to 3.6 V | -0.3 | 0.1 | µA | |
RPD_SPEED | Input pulldown resistance | SPEED/WAKE pin To GND | 0.6 | 1 | 1.4 | MΩ |
LOGIC-LEVEL INPUTS (DRVOFF) | ||||||
VIL | Input logic low voltage | 0.8 | V | |||
VIH | Input logic high voltage | 2.2 | V | |||
VHYS | Input hysteresis | 200 | 400 | 650 | mV | |
IIL | Input logic low current | Pin Voltage = 0 V; | -1 | 0 | 1 | µA |
IIH | Input logic high current | Pin Voltage = 5 V; | 7 | 20 | 35 | µA |
RPD_DRVOFF | Input pulldown resistance | DRVOFF To GND | 100 | 200 | 300 | kΩ |
OPEN-DRAIN OUTPUTS (nFAULT, FG) | ||||||
VOL | Output logic low voltage | IOD =-5 mA | 0.4 | V | ||
IOZ | Output logic high current | VOD = 3.3 V | 0 | 0.5 | µA | |
SPEED INPUT - ANALOG MODE | ||||||
VANA_FS | Analog full-speed voltage | 2.95 | 3 | 3.05 | V | |
VANA_RES | Analog voltage resolution | 732 | μV | |||
SPEED INPUT - PWM MODE | ||||||
ƒPWM | PWM input frequency | 0.01 | 95 | kHz | ||
ResPWM | PWM input resolution | fPWM = 0.01 to 0.35 kHz | 11 | 12 | 13 | bits |
fPWM = 0.35 to 2 kHz | 12 | 13 | 14 | bits | ||
fPWM = 2 to 3.5 kHz | 11 | 11.5 | 12 | bits | ||
fPWM = 3.5 to 7 kHz | 13 | 13.5 | 14 | bits | ||
fPWM = 7 to 14 kHz | 12 | 12.5 | 13 | bits | ||
fPWM = 14 to 29.2 kHz | 11 | 11.5 | 12 | bits | ||
fPWM = 29.3 to 60 kHz | 10 | 10.5 | 11 | bits | ||
fPWM = 60 to 95 kHz | 8 | 9 | 10 | bits | ||
SPEED INPUT - FREQUENCY MODE | ||||||
ƒPWM_FREQ | PWM input frequency range | Duty cycle = 50% | 3 | 32767 | Hz | |
SLEEP MODE | ||||||
VEN_SL | Analog voltage to enter sleep mode | SPEED_MODE = 00b (analog mode) | 40 | mV | ||
VEX_SL | Analog voltage to exit sleep mode | 2.6 | V | |||
tDET_ANA | Time needed to detect wake up signal on SPEED/WAKE pin | SPEED_MODE = 00b (analog mode), VSPEED/WAKE > VEX_SL | 0.5 | 1 | 1.5 | μs |
tWAKE | Wakeup time from sleep mode | VSPEED/WAKE > VEX_SL to DVDD voltage available, SPEED_MODE = 00b (analog mode) | 3 | 5 | ms | |
tEX_SL_DR_ANA | Time taken to drive motor after exiting from sleep mode | SPEED_MODE = 00b (analog mode) VSPEED/WAKE > VEX_SL, ISD detection disabled |
30 | ms | ||
tDET_PWM | Time needed to detect wake up signal on SPEED pin | SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode), VSPEED/WAKE > VIH |
0.5 | 1 | 1.5 | μs |
tWAKE_PWM | Wakeup time from sleep mode | VSPEED/WAKE > VIH to DVDD voltage available and release nFault, SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode) | 3 | 5 | ms | |
tEX_SL_DR_PWM | Time taken to drive motor after wakeup from sleep state | SPEED_MODE = 01b (PWM mode) VSPEED/WAKE > VIH, ISD detection disabled |
30 | ms | ||
tDET_SL_ANA | Time needed to detect sleep command | SPEED_MODE = 00b (analog mode) VSPEED/WAKE < VEN_SL, SLEEP_ENTRY_TIME = 00b or 01b |
0.5 | 1 | 2 | ms |
tDET_SL_PWM | Time needed to detect sleep command | SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode), VSPEED/WAKE < VIL(PWM mode and Frequency mode), SLEEP_ENTRY_TIME = 00b | 0.035 | 0.05 | 0.065 | ms |
SPEED_MODE = 01b (PWM mode), or 11b (Frequency mode), VSPEED/WAKE < VIL(PWM mode and Frequency mode), SLEEP_ENTRY_TIME = 01b | 0.14 | 0.2 | 0.26 | ms | ||
SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode) or 00b (analog mode), VSPEED/WAKE < VIL(PWM mode and Frequency mode), VSPEED/WAKE < VEN_SL (analog mode), SLEEP_ENTRY_TIME = 10b | 14 | 20 | 26 | ms | ||
SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode) or 00b (analog mode), VSPEED/WAKE < VIL(PWM mode and Frequency mode), VSPEED/WAKE < VEN_SL (analog mode), SLEEP_ENTRY_TIME = 11b | 140 | 200 | 260 | ms | ||
tEN_SL | Time needed to stop driving motor after detecting sleep command | VSPEED/WAKE < VEN_SL (analog mode) or VSPEED/WAKE < VIL (PWM and frequency mode) | 1 | 2 | ms | |
STANDBY MODE | ||||||
tEX_SB_DR_ANA | Time taken to drive motor after exiting standby mode | SPEED_MODE = 00b (analog mode) VSPEED > VEN_SB, ISD detection disabled |
6 | ms | ||
tEX_SB_DR_PWM | Time taken to drive motor after exiting standby mode | SPEED_MODE = 01b (PWM mode) VSPEED > VIH, ISD detection disabled |
6 | ms | ||
tDET_SB_ANA | Time needed to detect standby mode | SPEED_MODE = 00b (analog mode) VSPEED < VEN_SB |
0.5 | 1 | 2 | ms |
tEN_SB_PWM | Time needed to detect standby command | SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode), VSPEED < VIL, SLEEP_ENTRY_TIME = 00b |
0.035 | 0.05 | 0.065 | ms |
SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode), VSPEED < VIL, SLEEP_ENTRY_TIME = 01b |
0.14 | 0.2 | 0.26 | ms | ||
SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode), VSPEED < VIL, SLEEP_ENTRY_TIME = 10b |
14 | 20 | 26 | ms | ||
SPEED_MODE = 01b (PWM mode) or 11b (Frequency mode), VSPEED < VIL, SLEEP_ENTRY_TIME = 11b |
140 | 200 | 260 | ms | ||
tEN_SB_DIG | Time needed to detect standby mode | SPEED_MODE = 10b (I2C mode), SPEED_CMD = 0 | 1 | 2 | ms | |
tEN_SB | Time needed to stop driving motor after detecting standby command | VSPEED < VEN_SL (analog mode) or VSPEED < VIL (PWM mode) or SPEED command = 0 (I2C mode) | 1 | 2 | ms | |
OSCILLATOR | ||||||
fOSCREF | External clock reference | EXT_CLK_CONFIG = 000b | 8 | kHz | ||
EXT_CLK_CONFIG = 001b | 16 | kHz | ||||
EXT_CLK_CONFIG = 010b | 32 | kHz | ||||
EXT_CLK_CONFIG = 011b | 64 | kHz | ||||
EXT_CLK_CONFIG = 100b | 128 | kHz | ||||
EXT_CLK_CONFIG = 101b | 256 | kHz | ||||
EXT_CLK_CONFIG = 110b | 512 | kHz | ||||
EXT_CLK_CONFIG = 111b | 1024 | kHz | ||||
PROTECTION CIRCUITS | ||||||
VVREG_UVLO | Regulator input undervoltage lockout (VREG-UVLO) | Supply rising | 1.8 | 1.9 | 2 | V |
Supply falling | 1.7 | 1.8 | 1.9 | V | ||
VVREG_UVLO_HYS | Regulator UVLO hysteresis | Rising to falling threshold | 30 | 100 | 160 | mV |
tVREG_UVLO_DEG | Regulator UVLO deglitch time | 5 | µs | |||
VDVDD_UVLO | Digital regulator undervoltage lockout (DVDD-UVLO) | Supply rising | 1.2 | 1.25 | 1.32 | V |
VDVDD_UVLO | Digital regulator undervoltage lockout (DVDD-UVLO) | Supply falling | 1.25 | 1.35 | 1.45 | V |
VPVDD_UV | PVDD undervoltage lockout threshold | VPVDD rising | 4.3 | 4.4 | 4.5 | V |
VPVDD falling | 4 | 4.1 | 4.25 | |||
VPVDD_UV_HYS | PVDD undervoltagelockout hysteresis | Rising to falling threshold | 225 | 265 | 325 | mV |
tPVDD_UV_DG | PVDD undervoltage deglitch time | 10 | 20 | 30 | µs | |
VAVDD_POR | AVDD supply POR threshold | AVDD rising | 2.7 | 2.85 | 3.0 | V |
AVDD falling | 2.5 | 2.65 | 2.8 | |||
VAVDD_POR_HYS | AVDD POR hysteresis | Rising to falling threshold | 170 | 200 | 250 | mV |
tAVDD_POR_DG | AVDD POR deglitch time | 7 | 12 | 22 | µs | |
VGVDD_UV | GVDD undervoltage threshold | VGVDD rising | 7.3 | 7.5 | 7.8 | V |
VGVDD falling | 6.4 | 6.7 | 6.9 | V | ||
VGVDD_UV_HYS | GVDD undervoltage hysteresis | Rising to falling threshold | 800 | 900 | 1000 | mV |
tGVDD_UV_DG | GVDD undervoltage deglitch time | 5 | 10 | 15 | µs | |
VBST_UV | Bootstrap undervoltage threshold | VBSTx- VSHx; VBSTx rising | 3.9 | 4.45 | 5 | V |
VBSTx- VSHx; VBSTx falling | 3.7 | 4.2 | 4.8 | V | ||
VBST_UV_HYS | Bootstrap undervoltage hysteresis | Rising to falling threshold | 150 | 220 | 285 | mV |
tBST_UV_DG | Bootstrap undervoltage deglitch time | 2 | 4 | 6 | µs | |
VDS_LVL | VDS overcurrent protection threshold Reference | SEL_VDS_LVL = 0000 | 0.04 | 0.06 | 0.08 | V |
SEL_VDS_LVL = 0001 | 0.09 | 0.12 | 0.15 | V | ||
SEL_VDS_LVL = 0010 | 0.14 | 0.18 | 0.23 | V | ||
SEL_VDS_LVL = 0011 | 0.19 | 0.24 | 0.29 | V | ||
SEL_VDS_LVL = 0100 | 0.23 | 0.3 | 0.37 | V | ||
SEL_VDS_LVL = 0101 | 0.3 | 0.36 | 0.43 | V | ||
SEL_VDS_LVL = 0110 | 0.35 | 0.42 | 0.5 | V | ||
SEL_VDS_LVL = 0111 | 0.4 | 0.48 | 0.56 | V | ||
SEL_VDS_LVL = 1000 | 0.5 | 0.6 | 0.7 | V | ||
SEL_VDS_LVL = 1001 | 0.65 | 0.8 | 0.9 | V | ||
SEL_VDS_LVL = 1010 | 0.85 | 1 | 1.15 | V | ||
SEL_VDS_LVL = 1011 | 1 | 1.2 | 1.34 | V | ||
SEL_VDS_LVL = 1100 | 1.2 | 1.4 | 1.58 | V | ||
SEL_VDS_LVL = 1101 | 1.4 | 1.6 | 1.78 | V | ||
SEL_VDS_LVL = 1110 | 1.6 | 1.8 | 2 | V | ||
SEL_VDS_LVL = 1111 | 1.7 | 2 | 2.2 | V | ||
VSENSE_LVL | VSENSE overcurrent protection threshold | LSS to GND pin = 0.5V | 0.48 | 0.5 | 0.52 | V |
tDS_BLK | VDS overcurrent protection blanking time | 0.5 | 1 | 2.7 | µs | |
tDS_DG | VDS and VSENSE overcurrent protection deglitch time | 1.5 | 3 | 5 | µs | |
tSD_SINK_DIG | DRVOFF peak sink current duration | 3 | 5 | 7 | µs | |
tSD_DIG | DRVOFF digital shutdown delay | 0.5 | 1.5 | 2.2 | µs | |
tSD | DRVOFF analog shutdown delay | 7 | 14 | 21 | µs | |
TOTSD | Thermal shutdown temperature | TJ rising; | 160 | 170 | 187 | °C |
THYS | Thermal shutdown hysteresis | 16 | 20 | 23 | °C | |
I2C Serial Interface | ||||||
VI2C_L | LOW-level input voltage | -0.5 | 0.3*AVDD | V | ||
VI2C_H | HIGH-level input voltage | 0.7*AVDD | 5.5 | V | ||
VI2C_HYS | Hysterisis | 0.05*AVDD | V | |||
VI2C_OL | LOW-level output voltage | open-drain at 2mA sink current | 0 | 0.4 | V | |
II2C_OL | LOW-level output current | VI2C_OL = 0.6V | 6 | mA | ||
II2C_IL | Input current on SDA and SCL | -10(1) | 10(1) | µA | ||
Ci | Capacitance for SDA and SCL | 10 | pF | |||
tof | Output fall time from VI2C_H(min) to VI2C_L(max) | Standard Mode | 250(2) | ns | ||
Fast Mode | 250(2) | ns | ||||
tSP | Pulse width of spikes that must be suppressed by the input filter | Fast Mode | 0 | 50(3) | ns | |
EEPROM | ||||||
EEProg | Programing voltage | 1.35 | 1.5 | 1.65 | V | |
EERET | Retention | TA = 25 ℃ | 100 | Years | ||
TJ = -40 to 150 ℃ | 10 | Years | ||||
EEEND | Endurance | TJ = -40 to 150 ℃ | 1000 | Cycles | ||
TJ = -40 to 85 ℃ | 20000 | Cycles |