SLVSH86A December 2023 – June 2024 MCT8314Z
PRODUCTION DATA
The MCT8314Z device consists of an integrated 575-mΩ (combined high-side and low-side FET's on-state resistance) NMOS FETs connected in a three-phase bridge configuration. A doubler charge pump provides the proper gate-bias voltage to the high-side NMOS FETs across a wide operating voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs. The device has three VM motor power-supply pins which are to be connected to the motor-supply voltage.