SLVSHS3 November   2024 MMBZ30VCL-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—AEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 ESD Ratings - ISO Specification
    5. 5.5 Recommended Operating Conditions
    6. 5.6 Thermal Information
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6Device and Documentation Support
    1. 6.1 Documentation Support
      1. 6.1.1 Related Documentation
    2. 6.2 Receiving Notification of Documentation Updates
    3. 6.3 Support Resources
    4. 6.4 Trademarks
    5. 6.5 Electrostatic Discharge Caution
    6. 6.6 Glossary
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.7 Electrical Characteristics

over TA = 25°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VFForward VoltageIF = 10mA, TA = 25°C1.1V
VRWMReverse stand-off voltageTA = 25°C24V
VBRBreakdown voltage (1)IT = 10mA, TA = 25°C24.834.8V
VCLAMPClamping voltage (2) IPPM = 0.5A, tp = 10/1000µs3140V
ILEAKLeakage currentVIO = ±24V125nA
SZTemperature CoefficientIZ = 10mA13mV/C
CLLine capacitanceVIO = 0V, f = 1MHz, Vpp = 30mV4.5pF
(1) VBR is defined as the voltage when 10mA is applied and before the device enters into the shallow snapback state
(2) Device stressed with 10/1000 μs exponential decay waveform according to IEC 61643-321