SLAS701B November 2010 – June 2018 MSP430AFE221 , MSP430AFE222 , MSP430AFE223 , MSP430AFE231 , MSP430AFE232 , MSP430AFE233 , MSP430AFE251 , MSP430AFE252 , MSP430AFE253
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | VCC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|---|
VCC(PGM/ERASE) | Program and erase supply voltage | 2.2 | 3.6 | V | |||
fFTG | Flash timing generator frequency | 257 | 476 | kHz | |||
IPGM | Supply current from VCC during program | 2.2 V, 3.6 V | 1 | 5 | mA | ||
IERASE | Supply current from VCC during erase | 2.2 V, 3.6 V | 1 | 7 | mA | ||
tCPT | Cumulative program time(1) | 2.2 V, 3.6 V | 10 | ms | |||
tCMErase | Cumulative mass erase time | 2.2 V, 3.6 V | 20 | ms | |||
Program and erase endurance | 104 | 105 | cycles | ||||
tRetention | Data retention duration | TJ = 25°C | 100 | years | |||
tWord | Word or byte program time | See (2) | 30 | tFTG | |||
tBlock, 0 | Block program time for first byte or word | See (2) | 25 | tFTG | |||
tBlock, 1-63 | Block program time for each additional byte or word | See (2) | 18 | tFTG | |||
tBlock, End | Block program end-sequence wait time | See (2) | 6 | tFTG | |||
tMass Erase | Mass erase time | See (2) | 10593 | tFTG | |||
tSeg Erase | Segment erase time | See (2) | 4819 | tFTG |