SLAS768E September 2012 – September 2018 MSP430F6745 , MSP430F6746 , MSP430F6747 , MSP430F6748 , MSP430F6749 , MSP430F6765 , MSP430F6766 , MSP430F6767 , MSP430F6768 , MSP430F6769 , MSP430F6775 , MSP430F6776 , MSP430F6777 , MSP430F6778 , MSP430F6779
PRODUCTION DATA.
PARAMETER | TJ | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
DVCC(PGM/ERASE) | Program and erase supply voltage | 1.8 | 3.6 | V | ||
IPGM | Average supply current from DVCC during program | 3 | 5 | mA | ||
IERASE | Average supply current from DVCC during erase | 6 | 15 | mA | ||
IMERASE, IBANK | Average supply current from DVCC during mass erase or bank erase | 6 | 15 | mA | ||
tCPT | Cumulative program time(1) | 16 | ms | |||
Program and erase endurance | 104 | 105 | cycles | |||
tRetention | Data retention duration | 25°C | 100 | years | ||
tWord | Word or byte program time(2) | 64 | 85 | µs | ||
tBlock, 0 | Block program time for first byte or word(2) | 49 | 65 | µs | ||
tBlock, 1–(N–1) | Block program time for each additional byte or word, except for last byte or word(2) | 37 | 49 | µs | ||
tBlock, N | Block program time for last byte or word(2) | 55 | 73 | µs | ||
tErase | Erase time for segment erase, mass erase, and bank erase when available(2) | 23 | 32 | ms | ||
fMCLK,MGR | MCLK frequency in marginal read mode
(FCTL4.MGR0 = 1 or FCTL4. MGR1 = 1) |
0 | 1 | MHz |