SLASEE4C January   2018  – December 2019 MSP430FR2512 , MSP430FR2522

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Pin Attributes
    3. 4.3 Signal Descriptions
    4. 4.4 Pin Multiplexing
    5. 4.5 Buffer Types
    6. 4.6 Connection of Unused Pins
  5. 5Specifications
    1. 5.1       Absolute Maximum Ratings
    2. 5.2       ESD Ratings
    3. 5.3       Recommended Operating Conditions
    4. 5.4       Active Mode Supply Current Into VCC Excluding External Current
    5. 5.5       Active Mode Supply Current Per MHz
    6. 5.6       Low-Power Mode (LPM0) Supply Currents Into VCC Excluding External Current
    7. 5.7       Low-Power Mode (LPM3, LPM4) Supply Currents (Into VCC) Excluding External Current
    8. 5.8       Low-Power Mode (LPMx.5) Supply Currents (Into VCC) Excluding External Current
    9. 5.9       Typical Characteristics - Low-Power Mode Supply Currents
    10. Table 5-1 Typical Characteristics – Current Consumption Per Module
    11. 5.10      Thermal Resistance Characteristics
    12. 5.11      Timing and Switching Characteristics
      1. 5.11.1  Power Supply Sequencing
        1. Table 5-2 PMM, SVS and BOR
      2. 5.11.2  Reset Timing
        1. Table 5-3 Wake-up Times From Low-Power Modes and Reset
      3. 5.11.3  Clock Specifications
        1. Table 5-4 XT1 Crystal Oscillator (Low Frequency)
        2. Table 5-5 DCO FLL, Frequency
        3. Table 5-6 DCO Frequency
        4. Table 5-7 REFO
        5. Table 5-8 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
        6. Table 5-9 Module Oscillator (MODOSC)
      4. 5.11.4  Digital I/Os
        1. Table 5-10 Digital Inputs
        2. Table 5-11 Digital Outputs
        3. 5.11.4.1   Typical Characteristics – Outputs at 3 V and 2 V
      5. 5.11.5  VREF+ Built-in Reference
        1. Table 5-12 VREF+
      6. 5.11.6  Timer_A
        1. Table 5-13 Timer_A
      7. 5.11.7  eUSCI
        1. Table 5-14 eUSCI (UART Mode) Clock Frequency
        2. Table 5-15 eUSCI (UART Mode)
        3. Table 5-16 eUSCI (SPI Master Mode) Clock Frequency
        4. Table 5-17 eUSCI (SPI Master Mode)
        5. Table 5-18 eUSCI (SPI Slave Mode)
        6. Table 5-19 eUSCI (I2C Mode)
      8. 5.11.8  ADC
        1. Table 5-20 ADC, Power Supply and Input Range Conditions
        2. Table 5-21 ADC, 10-Bit Timing Parameters
        3. Table 5-22 ADC, 10-Bit Linearity Parameters
      9. 5.11.9  CapTIvate
        1. Table 5-23 CapTIvate Electrical Characteristics
        2. Table 5-24 CapTIvate Signal-to-Noise Ratio Characteristics
      10. 5.11.10 FRAM
        1. Table 5-25 FRAM
      11. 5.11.11 Debug and Emulation
        1. Table 5-26 JTAG, Spy-Bi-Wire Interface
        2. Table 5-27 JTAG, 4-Wire Interface
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  CPU
    3. 6.3  Operating Modes
    4. 6.4  Interrupt Vector Addresses
    5. 6.5  Bootloader (BSL)
    6. 6.6  JTAG Standard Interface
    7. 6.7  Spy-Bi-Wire Interface (SBW)
    8. 6.8  FRAM
    9. 6.9  Memory Protection
    10. 6.10 Peripherals
      1. 6.10.1  Power-Management Module (PMM)
      2. 6.10.2  Clock System (CS) and Clock Distribution
      3. 6.10.3  General-Purpose Input/Output Port (I/O)
      4. 6.10.4  Watchdog Timer (WDT)
      5. 6.10.5  System (SYS) Module
      6. 6.10.6  Cyclic Redundancy Check (CRC)
      7. 6.10.7  Enhanced Universal Serial Communication Interface (eUSCI_A0, eUSCI_B0)
      8. 6.10.8  Timers (Timer0_A3, Timer1_A3)
      9. 6.10.9  Hardware Multiplier (MPY)
      10. 6.10.10 Backup Memory (BAKMEM)
      11. 6.10.11 Real-Time Clock (RTC)
      12. 6.10.12 10-Bit Analog-to-Digital Converter (ADC)
      13. 6.10.13 CapTIvate Technology
      14. 6.10.14 Embedded Emulation Module (EEM)
    11. 6.11 Input/Output Diagrams
      1. 6.11.1 Port P1 (P1.0 to P1.7) Input/Output With Schmitt Trigger
      2. 6.11.2 Port P2 (P2.0 to P2.6) Input/Output With Schmitt Trigger
    12. 6.12 Device Descriptors
    13. 6.13 Memory
      1. 6.13.1 Memory Organization
      2. 6.13.2 Peripheral File Map
    14. 6.14 Identification
      1. 6.14.1 Revision Identification
      2. 6.14.2 Device Identification
      3. 6.14.3 JTAG Identification
  7. 7Applications, Implementation, and Layout
    1. 7.1 Device Connection and Layout Fundamentals
      1. 7.1.1 Power Supply Decoupling and Bulk Capacitors
      2. 7.1.2 External Oscillator
      3. 7.1.3 JTAG
      4. 7.1.4 Reset
      5. 7.1.5 Unused Pins
      6. 7.1.6 General Layout Recommendations
      7. 7.1.7 Do's and Don'ts
    2. 7.2 Peripheral- and Interface-Specific Design Information
      1. 7.2.1 ADC Peripheral
        1. 7.2.1.1 Partial Schematic
        2. 7.2.1.2 Design Requirements
        3. 7.2.1.3 Layout Guidelines
      2. 7.2.2 CapTIvate Peripheral
        1. 7.2.2.1 Device Connection and Layout Fundamentals
        2. 7.2.2.2 Measurements
          1. 7.2.2.2.1 SNR
          2. 7.2.2.2.2 Sensitivity
          3. 7.2.2.2.3 Power
    3. 7.3 CapTIvate Technology Evaluation
  8. 8Device and Documentation Support
    1. 8.1  Getting Started and Next Steps
    2. 8.2  Device Nomenclature
    3. 8.3  Tools and Software
    4. 8.4  Documentation Support
    5. 8.5  Related Links
    6. 8.6  Community Resources
    7. 8.7  Trademarks
    8. 8.8  Electrostatic Discharge Caution
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • RHL|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Table 5-22 ADC, 10-Bit Linearity Parameters

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
EI Integral linearity error (10-bit mode) Veref+ reference 2.4 V to 3.6 V –2 2 LSB
Integral linearity error (8-bit mode) 2.0 V to 3.6 V –2 2
ED Differential linearity error (10-bit mode) Veref+ reference 2.4 V to 3.6 V –1 1 LSB
Differential linearity error (8-bit mode) 2.0 V to 3.6 V –1 1
EO Offset error (10-bit mode) Veref+ reference 2.4 V to 3.6 V –6.5 6.5 mV
Offset error (8-bit mode) 2.0 V to 3.6 V –6.5 6.5
EG Gain error (10-bit mode) Veref+ as reference 2.4 V to 3.6 V –2.0 2.0 LSB
Internal 1.5-V reference –3.0% 3.0%
Gain error (8-bit mode) Veref+ as reference 2.0 V to 3.6 V –2.0 2.0 LSB
Internal 1.5-V reference –3.0% 3.0%
ET Total unadjusted error (10-bit mode) Veref+ as reference 2.4 V to 3.6 V –2.0 2.0 LSB
Internal 1.5-V reference –3.0% 3.0%
Total unadjusted error (8-bit mode) Veref+ as reference 2.0 V to 3.6 V –2.0 2.0 LSB
Internal 1.5-V reference –3.0% 3.0%
VSENSOR See (1) ADCON = 1, INCH = 0Ch,
TA = 0℃		 3 V 913 mV
TCSENSOR See (2) ADCON = 1, INCH = 0Ch 3 V 3.35 mV/℃
tSENSOR (sample) Sample time required if channel 12 is selected(3) ADCON = 1, INCH = 0Ch, Error of conversion result ≤1 LSB,
AM and all LPMs above LPM3		 3 V 30 µs
ADCON = 1, INCH = 0Ch, Error of conversion result ≤1 LSB, LPM3 3 V 100
(1) The temperature sensor offset can vary significantly. TI recommends a single-point calibration to minimize the offset error of the built-in temperature sensor.
(2) The device descriptor structure contains calibration values for 30℃ and 85℃ for each available reference voltage level. The sensor voltage can be computed as VSENSE = TCSENSOR × (Temperature, ℃) + VSENSOR, where TCSENSOR and VSENSOR can be computed from the calibration values for higher accuracy.
(3) The typical equivalent impedance of the sensor is 700 kΩ. The sample time required includes the sensor on time, tSENSOR(on).