SLASEE4C January   2018  – December 2019 MSP430FR2512 , MSP430FR2522

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Pin Attributes
    3. 4.3 Signal Descriptions
    4. 4.4 Pin Multiplexing
    5. 4.5 Buffer Types
    6. 4.6 Connection of Unused Pins
  5. 5Specifications
    1. 5.1       Absolute Maximum Ratings
    2. 5.2       ESD Ratings
    3. 5.3       Recommended Operating Conditions
    4. 5.4       Active Mode Supply Current Into VCC Excluding External Current
    5. 5.5       Active Mode Supply Current Per MHz
    6. 5.6       Low-Power Mode (LPM0) Supply Currents Into VCC Excluding External Current
    7. 5.7       Low-Power Mode (LPM3, LPM4) Supply Currents (Into VCC) Excluding External Current
    8. 5.8       Low-Power Mode (LPMx.5) Supply Currents (Into VCC) Excluding External Current
    9. 5.9       Typical Characteristics - Low-Power Mode Supply Currents
    10. Table 5-1 Typical Characteristics – Current Consumption Per Module
    11. 5.10      Thermal Resistance Characteristics
    12. 5.11      Timing and Switching Characteristics
      1. 5.11.1  Power Supply Sequencing
        1. Table 5-2 PMM, SVS and BOR
      2. 5.11.2  Reset Timing
        1. Table 5-3 Wake-up Times From Low-Power Modes and Reset
      3. 5.11.3  Clock Specifications
        1. Table 5-4 XT1 Crystal Oscillator (Low Frequency)
        2. Table 5-5 DCO FLL, Frequency
        3. Table 5-6 DCO Frequency
        4. Table 5-7 REFO
        5. Table 5-8 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
        6. Table 5-9 Module Oscillator (MODOSC)
      4. 5.11.4  Digital I/Os
        1. Table 5-10 Digital Inputs
        2. Table 5-11 Digital Outputs
        3. 5.11.4.1   Typical Characteristics – Outputs at 3 V and 2 V
      5. 5.11.5  VREF+ Built-in Reference
        1. Table 5-12 VREF+
      6. 5.11.6  Timer_A
        1. Table 5-13 Timer_A
      7. 5.11.7  eUSCI
        1. Table 5-14 eUSCI (UART Mode) Clock Frequency
        2. Table 5-15 eUSCI (UART Mode)
        3. Table 5-16 eUSCI (SPI Master Mode) Clock Frequency
        4. Table 5-17 eUSCI (SPI Master Mode)
        5. Table 5-18 eUSCI (SPI Slave Mode)
        6. Table 5-19 eUSCI (I2C Mode)
      8. 5.11.8  ADC
        1. Table 5-20 ADC, Power Supply and Input Range Conditions
        2. Table 5-21 ADC, 10-Bit Timing Parameters
        3. Table 5-22 ADC, 10-Bit Linearity Parameters
      9. 5.11.9  CapTIvate
        1. Table 5-23 CapTIvate Electrical Characteristics
        2. Table 5-24 CapTIvate Signal-to-Noise Ratio Characteristics
      10. 5.11.10 FRAM
        1. Table 5-25 FRAM
      11. 5.11.11 Debug and Emulation
        1. Table 5-26 JTAG, Spy-Bi-Wire Interface
        2. Table 5-27 JTAG, 4-Wire Interface
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  CPU
    3. 6.3  Operating Modes
    4. 6.4  Interrupt Vector Addresses
    5. 6.5  Bootloader (BSL)
    6. 6.6  JTAG Standard Interface
    7. 6.7  Spy-Bi-Wire Interface (SBW)
    8. 6.8  FRAM
    9. 6.9  Memory Protection
    10. 6.10 Peripherals
      1. 6.10.1  Power-Management Module (PMM)
      2. 6.10.2  Clock System (CS) and Clock Distribution
      3. 6.10.3  General-Purpose Input/Output Port (I/O)
      4. 6.10.4  Watchdog Timer (WDT)
      5. 6.10.5  System (SYS) Module
      6. 6.10.6  Cyclic Redundancy Check (CRC)
      7. 6.10.7  Enhanced Universal Serial Communication Interface (eUSCI_A0, eUSCI_B0)
      8. 6.10.8  Timers (Timer0_A3, Timer1_A3)
      9. 6.10.9  Hardware Multiplier (MPY)
      10. 6.10.10 Backup Memory (BAKMEM)
      11. 6.10.11 Real-Time Clock (RTC)
      12. 6.10.12 10-Bit Analog-to-Digital Converter (ADC)
      13. 6.10.13 CapTIvate Technology
      14. 6.10.14 Embedded Emulation Module (EEM)
    11. 6.11 Input/Output Diagrams
      1. 6.11.1 Port P1 (P1.0 to P1.7) Input/Output With Schmitt Trigger
      2. 6.11.2 Port P2 (P2.0 to P2.6) Input/Output With Schmitt Trigger
    12. 6.12 Device Descriptors
    13. 6.13 Memory
      1. 6.13.1 Memory Organization
      2. 6.13.2 Peripheral File Map
    14. 6.14 Identification
      1. 6.14.1 Revision Identification
      2. 6.14.2 Device Identification
      3. 6.14.3 JTAG Identification
  7. 7Applications, Implementation, and Layout
    1. 7.1 Device Connection and Layout Fundamentals
      1. 7.1.1 Power Supply Decoupling and Bulk Capacitors
      2. 7.1.2 External Oscillator
      3. 7.1.3 JTAG
      4. 7.1.4 Reset
      5. 7.1.5 Unused Pins
      6. 7.1.6 General Layout Recommendations
      7. 7.1.7 Do's and Don'ts
    2. 7.2 Peripheral- and Interface-Specific Design Information
      1. 7.2.1 ADC Peripheral
        1. 7.2.1.1 Partial Schematic
        2. 7.2.1.2 Design Requirements
        3. 7.2.1.3 Layout Guidelines
      2. 7.2.2 CapTIvate Peripheral
        1. 7.2.2.1 Device Connection and Layout Fundamentals
        2. 7.2.2.2 Measurements
          1. 7.2.2.2.1 SNR
          2. 7.2.2.2.2 Sensitivity
          3. 7.2.2.2.3 Power
    3. 7.3 CapTIvate Technology Evaluation
  8. 8Device and Documentation Support
    1. 8.1  Getting Started and Next Steps
    2. 8.2  Device Nomenclature
    3. 8.3  Tools and Software
    4. 8.4  Documentation Support
    5. 8.5  Related Links
    6. 8.6  Community Resources
    7. 8.7  Trademarks
    8. 8.8  Electrostatic Discharge Caution
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • RHL|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.8 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.