SLAS789D June 2014 – August 2018 MSP430FR5986 , MSP430FR5987 , MSP430FR5988 , MSP430FR5989 , MSP430FR59891 , MSP430FR6987 , MSP430FR6988 , MSP430FR6989 , MSP430FR69891
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | VCC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|---|
VOL(ESICHx) | Voltage drop due to ON-resistance of excitation transistor (see Figure 5-21) | I(ESICHx) = 2 mA, ESITEN = 1 | 3 V | 0.3 | V | ||
VOH(ESICHx) | Voltage drop due to ON-resistance of damping transistor(1) (see Figure 5-21) | I(ESICHx) = –200 µA, ESITEN = 1 | 3 V | 0.1 | V | ||
VOL(ESICOM) | I(ESICOM) = 3 mA, ESISH = 1 | 2.2 V, 3 V | 0 | 0.1 | V | ||
IESICHx(tri-state) | V(ESICHx) = 0 V to AVCC, port function disabled,
ESISH = 1 |
3 V | –50 | 50 | nA |
Table 5-37 lists the sample timing of the ESI.