SLASF86B October   2023  – May 2024 MSPM0G3105-Q1 , MSPM0G3106-Q1 , MSPM0G3107-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Ramp
      1. 7.6.1 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
        1. 7.9.1.1 SYSOSC Typical Frequency Accuracy
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 System Phase Lock Loop (SYSPLL)
      4. 7.9.4 Low Frequency Crystal/Clock
      5. 7.9.5 High Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1 Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
    13. 7.13 Typical Connection Diagram
    14. 7.14 Temperature Sensor
    15. 7.15 VREF
      1. 7.15.1 Voltage Characteristics
      2. 7.15.2 Electrical Characteristics
    16. 7.16 GPAMP
      1. 7.16.1 Electrical Characteristics
      2. 7.16.2 Switching Characteristics
    17. 7.17 I2C
      1. 7.17.1 I2C Timing Diagram
      2. 7.17.2 I2C Characteristics
      3. 7.17.3 I2C Filter
    18. 7.18 SPI
      1. 7.18.1 SPI
      2. 7.18.2 SPI Timing Diagram
    19. 7.19 UART
    20. 7.20 TIMx
    21. 7.21 TRNG
      1. 7.21.1 TRNG Electrical Characteristics
      2. 7.21.2 TRNG Switching Characteristics
    22. 7.22 Emulation and Debug
      1. 7.22.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0G310x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 GPAMP
    16. 8.16 TRNG
    17. 8.17 AES
    18. 8.18 CRC
    19. 8.19 UART
    20. 8.20 I2C
    21. 8.21 SPI
    22. 8.22 CAN-FD
    23. 8.23 WWDT
    24. 8.24 RTC
    25. 8.25 Timers (TIMx)
    26. 8.26 Device Analog Connections
    27. 8.27 Input/Output Diagrams
    28. 8.28 Serial Wire Debug Interface
    29. 8.29 Bootstrap Loader (BSL)
    30. 8.30 Device Factory Constants
    31. 8.31 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGS|28
  • PM|64
  • RGZ|48
  • RHB|32
  • DGS|32
  • PT|48
  • DGS|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.9 SRAM

MSPM0Gxx MCUs include a low power, high performance SRAM memory with zero wait state access across the supported CPU frequency range of the device. MSPM0Gxx MCUs also provides up to 32KB of SRAM with hardware parity. SRAM memory can be used for storing volatile information such as the call stack, heap, global data, and code. The SRAM memory content is fully retained in run, sleep, stop, and standby operating modes and is lost in shutdown mode. A write protection mechanism is provided to allow the application to prevent unintended modifications to the SRAM memory. Write protection is useful when placing executable code into SRAM as it provides a level of protection against unintentional overwrites of code by either the CPU or DMA. Placing code in SRAM can improve performance of critical loops by enabling zero wait state operation and lower power consumption.