A dual bank of non-volatile flash memory (up to
256kB/512kB total) and a separate data flash bank (16kB) is provided for storing executable
program code and application data.
Key features of the flash include:
- Hardware ECC protection (encode and
decode) with single bit error correction and double bit error detection
- In-circuit program and erase operations
supported across the entire recommended supply range
- Small 1kB sector sizes (minimum erase
resolution of 1kB)
- Up to 100,000 program/erase cycles on
the lower 32kB of the flash memory (and data flash bank), with up to 10,000
program/erase cycles on the remaining flash memory (devices with 32kB support 100,000
cycles on the entire flash memory)
- Bank address swap for in-system, over-the-air (OTA) firmware updates
For a complete description of the flash
memory, see the NVM chapter of the MSPM0 G-Series 80MHz
Microcontrollers Technical Reference Manual.