SLASEX5C October   2022  – January 2024 MSPM0L1105 , MSPM0L1106

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 POR and BOR
      2. 7.6.2 Power Supply Ramp
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
        1. 7.9.1.1 SYSOSC Typical Frequency Accuracy
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
    10. 7.10 Digital IO
      1. 7.10.1 Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
      4. 7.12.4 Typical Connection Diagram
    13. 7.13 Temperature Sensor
    14. 7.14 VREF
      1. 7.14.1 Voltage Characteristics
      2. 7.14.2 Electrical Characteristics
    15. 7.15 GPAMP
      1. 7.15.1 Electrical Characteristics
      2. 7.15.2 Switching Characteristics
    16. 7.16 I2C
      1. 7.16.1 I2C Characteristics
      2. 7.16.2 I2C Filter
      3. 7.16.3 I2C Timing Diagram
    17. 7.17 SPI
      1. 7.17.1 SPI
      2. 7.17.2 SPI Timing Diagram
    18. 7.18 UART
    19. 7.19 TIMx
    20. 7.20 Emulation and Debug
      1. 7.20.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0L110x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 GPAMP
    16. 8.16 CRC
    17. 8.17 UART
    18. 8.18 SPI
    19. 8.19 I2C
    20. 8.20 WWDT
    21. 8.21 Timers (TIMx)
    22. 8.22 Device Analog Connections
    23. 8.23 Input/Output Diagrams
    24. 8.24 Bootstrap Loader (BSL)
    25. 8.25 Serial Wire Debug Interface
    26. 8.26 Device Factory Constants
    27. 8.27 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGS|28
  • DYY|16
  • RGE|24
  • RHB|32
  • RTR|16
  • DGS|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.9 SRAM

MSPM0Lxx MCUs include a low-power high-performance SRAM memory with zero wait state access across the supported CPU frequency range of the device. SRAM memory can be used for storing volatile information such as the call stack, heap, global data, and code. The SRAM memory content is fully retained in run, sleep, stop, and standby operating modes and is lost in shutdown mode. A write protection mechanism is provided to allow the application to prevent unintended modifications to a portion of the SRAM memory. SRAM write protection is useful when placing executable code into SRAM to provide a level of protection against unintentional overwrites of code by either the CPU or DMA. Placing code in SRAM can improve performance of critical loops by enabling zero wait state operation and lower power consumption.