SLASFC9 December   2024 MSPM0L1117

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Device Comparison Table
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      11
    3. 6.3 Signal Descriptions
      1.      13
      2.      14
      3.      15
      4.      16
      5.      17
      6.      18
      7.      19
      8.      20
      9.      21
      10.      22
      11.      23
      12.      24
      13.      25
      14.      26
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 Power Supply Ramp
      2. 7.6.2 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
        1. 7.9.1.1 SYSOSC Typical Frequency Accuracy
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 Low Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
      4. 7.12.4 Typical Connection Diagram
    13. 7.13 Temperature Sensor
    14. 7.14 VREF
      1. 7.14.1 Voltage Characteristics
      2. 7.14.2 Electrical Characteristics
    15. 7.15 I2C
      1. 7.15.1 I2C Characteristics
      2. 7.15.2 I2C Filter
      3. 7.15.3 I2C Timing Diagram
    16. 7.16 SPI
      1. 7.16.1 SPI
      2. 7.16.2 SPI Timing Diagram
    17. 7.17 UART
    18. 7.18 TIMx
    19. 7.19 TRNG Electrical Characteristics
    20. 7.20 TRNG Switching Characteristics
    21. 7.21 Emulation and Debug
      1. 7.21.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Functional Block Diagram
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode
    4. 8.4  Security
    5. 8.5  Power Management Unit (PMU)
    6. 8.6  Clock Module (CKM)
    7. 8.7  DMA
    8. 8.8  Events
    9. 8.9  Memory
      1. 8.9.1 Memory Organization
      2. 8.9.2 Peripheral File Map
      3. 8.9.3 Peripheral Interrupt Vector
    10. 8.10 Flash Memory
    11. 8.11 SRAM
    12. 8.12 GPIO
    13. 8.13 IOMUX
    14. 8.14 ADC
    15. 8.15 Temperature Sensor
    16. 8.16 VREF
    17. 8.17 TRNG
    18. 8.18 AESADV
    19. 8.19 Keystore
    20. 8.20 CRC-P
    21. 8.21 UART
    22. 8.22 I2C
    23. 8.23 SPI
    24. 8.24 Low-Frequency Sub System (LFSS)
    25. 8.25 RTC_B
    26. 8.26 IWDT_B
    27. 8.27 WWDT
    28. 8.28 Timers (TIMx)
    29. 8.29 Device Analog Connections
    30. 8.30 Input/Output Diagrams
    31. 8.31 Serial Wire Debug Interface
    32. 8.32 Bootstrap Loader (BSL)
    33. 8.33 Device Factory Constants
    34. 8.34 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Documentation Support
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.11 SRAM

MSPM0L111x MCUs include a low power, high performance SRAM memory with zero wait state access across the supported CPU frequency range of the device. MSPM0 MCUs also provide up to 16KB SRAM. SRAM memory may be used for storing volatile information such as the call stack, heap, global data, and code.

The SRAM memory content is fully retained in run, sleep, stop, and standby operating modes and is lost in shutdown mode.

A write protection mechanism is provided to allow the application to prevent unintended modifications to the SRAM memory. Write protection is useful when placing executable code into SRAM as it provides a level of protection against unintentional overwrites of code by either the CPU or DMA. Placing code in SRAM can improve performance of critical loops by enabling zero wait state operation and lower power consumption.