SBAS803A November 2016 – November 2017 MUX506 , MUX507
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Voltage | Supply | VDD | –0.3 | 40 | V |
VSS | –40 | 0.3 | |||
VDD – VSS | 40 | ||||
Digital pins(2): EN, A0, A1, A2, A3 | VSS – 0.3 | VDD + 0.3 | |||
Analog pins(2): Sx, SxA, SxB, D, DA, DB | VSS – 2 | VDD + 2 | |||
Current(3) | –30 | 30 | mA | ||
Temperature | Operating, TA | –55 | 150 | °C | |
Junction, TJ | 150 | ||||
Storage, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | 2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | 500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VDD(1) | Positive power-supply voltage | Dual supply | 5 | 18 | V | |
Single supply | 10 | 36 | ||||
VSS(2) | Negative power-supply voltage (dual supply) | –5 | –18 | V | ||
VDD – VSS | Supply voltage | 10 | 36 | V | ||
VS | Source pins voltage(3) | VSS | VDD | V | ||
VD | Drain pins voltage | VSS | VDD | V | ||
VEN | Enable pin voltage | VSS | VDD | V | ||
VA | Address pins voltage | VSS | VDD | V | ||
ICH | Channel current (TA = 25°C) | –25 | 25 | mA | ||
TA | Operating temperature | –40 | 125 | °C |
THERMAL METRIC(1) | MUX50x | UNIT | ||
---|---|---|---|---|
PW (TSSOP) | DW (SOIC) | |||
28 PINS | 28 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 79.8 | 53.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 24.0 | 30.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 37.6 | 28.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.2 | 9.0 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.1 | 28.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
ANALOG SWITCH | ||||||||
Analog signal range | TA = –40°C to +125°C | VSS | VDD | V | ||||
RON | On-resistance | VS = 0 V, IS = –1 mA | 125 | 170 | Ω | |||
VS = ±10 V, IS = –1 mA | 145 | 200 | ||||||
TA = –40°C to +85°C | 230 | |||||||
TA = –40°C to +125°C | 250 | |||||||
ΔRON | On-resistance mismatch between channels | VS = ±10 V, IS = –1 mA | 6 | 9 | Ω | |||
TA = –40°C to +85°C | 14 | |||||||
TA = –40°C to +125°C | 16 | |||||||
RFLAT | On-resistance flatness | VS = 10 V, 0 V, –10 V | 20 | 45 | Ω | |||
TA = –40°C to +85°C | 53 | |||||||
TA = –40°C to +125°C | 58 | |||||||
On-resistance drift | VS = 0 V | 0.62 | Ω/°C | |||||
IS(OFF) | Input leakage current | Switch state is off, VS = ±10 V, VD = ±10 V(2) |
–1 | –0.001 | 1 | nA | ||
TA = –40°C to +85°C | –10 | 10 | ||||||
TA = –40°C to +125°C | –25 | 25 | ||||||
ID(OFF) | Output off-leakage current | Switch state is off, VS = ±10 V, VD = ±10 V(2) |
–1 | –0.01 | 1 | nA | ||
TA = -40°C to +85°C | –10 | 10 | ||||||
TA = -40°C to +125°C | –25 | 25 | ||||||
ID(ON) | Output on-leakage current | Switch state is on, VD = ±10 V, VS = floating |
–1 | –0.01 | 1 | nA | ||
TA = –40°C to +85°C | –10 | 10 | ||||||
TA = –40°C to +125°C | –50 | 50 | ||||||
LOGIC INPUT | ||||||||
VIH | Logic voltage high | 2 | V | |||||
VIL | Logic voltage low | 0.8 | V | |||||
ID | Input current | 0.1 | µA | |||||
SWITCH DYNAMICS(1) | ||||||||
tON | Enable turn-on time | VS = ±10 V, RL = 300 Ω, CL= 35 pF |
82 | 136 | ns | |||
TA = –40°C to +85°C | 145 | |||||||
TA = –40°C to +125°C | 151 | |||||||
tOFF | Enable turn-off time | VS = ±10 V, RL = 300 Ω, CL= 35 pF |
63 | 78 | ns | |||
TA = –40°C to +85°C | 89 | |||||||
TA = –40°C to +125°C | 97 | |||||||
tt | Transition time | VS = 10 V, RL = 300 Ω, CL= 35 pF, |
97 | 143 | ns | |||
TA = –40°C to +85°C | 151 | |||||||
TA = –40°C to +125°C | 157 | |||||||
tBBM | Break-before-make time delay | VS = 10 V, RL = 300 Ω, CL= 35 pF, TA = –40°C to +125°C | 30 | 54 | ns | |||
QJ | Charge injection | CL = 1 nF, RS = 0 Ω | VS = 0 V | TSSOP package | 0.31 | pC | ||
SOIC package | 0.67 | |||||||
VS = –15 V to +15 V | TSSOP package | ±0.9 | ||||||
SOIC package | ±1.1 | |||||||
Off-isolation | RL = 50 Ω, VS = 1 VRMS, f = 1 MHz |
Nonadjacent channel to D, DA, DB | TSSOP package | –98 | dB | |||
SOIC package | –94 | |||||||
Adjacent channel to D, DA, DB | TSSOP package | –94 | ||||||
SOIC package | –88 | |||||||
Channel-to-channel crosstalk | RL = 50 Ω, VS = 1 VRMS, f = 1 MHz |
Nonadjacent channels | TSSOP package | –100 | dB | |||
SOIC package | –96 | |||||||
Adjacent channels | TSSOP package | –88 | ||||||
SOIC package | –83 | |||||||
CS(OFF) | Input off-capacitance | f = 1 MHz, VS = 0 V | 2.1 | 3 | pF | |||
CD(OFF) | Output off-capacitance | f = 1 MHz, VS = 0 V | MUX506 | 11.1 | 12.2 | pF | ||
MUX507 | 6.4 | 7.5 | ||||||
CS(ON), CD(ON) | Output on-capacitance | f = 1 MHz, VS = 0 V | MUX506 | 13.5 | 15 | pF | ||
MUX507 | 8.7 | 10.2 | ||||||
POWER SUPPLY | ||||||||
VDD supply current | All VA = 0 V or 3.3 V, VS = 0 V, VEN = 3.3 V, |
45 | 59 | µA | ||||
TA = –40°C to +85°C | 62 | |||||||
TA = –40°C to +125°C | 85 | |||||||
VSS supply current | All VA = 0 V or 3.3 V, VS = 0 V, VEN = 3.3 V, |
26 | 34 | µA | ||||
TA = –40°C to +85°C | 37 | |||||||
TA = –40°C to +125°C | 58 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
ANALOG SWITCH | ||||||||
Analog signal range | TA = –40°C to +125°C | VSS | VDD | V | ||||
RON | On-resistance | VS = 10 V, IS = –1 mA | 235 | 340 | Ω | |||
TA = –40°C to +85°C | 390 | |||||||
TA = –40°C to +125°C | 430 | |||||||
ΔRON | On-resistance match | VS = 10 V, IS = –1 mA | 7 | 20 | Ω | |||
TA = –40°C to +85°C | 35 | |||||||
TA = –40°C to +125°C | 40 | |||||||
On-resistance drift | VS = 10 V | 1.07 | Ω/°C | |||||
IS(OFF) | Input leakage current | Switch state is off, VS = 1 V and VD = 10 V, or VS = 10 V and VD = 1 V(1) |
–1 | 0.001 | 1 | nA | ||
TA = –40°C to +85°C | –10 | 10 | ||||||
TA = –40°C to +125°C | –25 | 25 | ||||||
ID(OFF) | Output off leakage current | Switch state is off, VS = 1 V and VD = 10 V, or VS = 10 V and VD = 1 V(1) |
–1 | 0.01 | 1 | nA | ||
TA = –40°C to +85°C | –10 | 10 | ||||||
TA = –40°C to +125°C | –25 | 25 | ||||||
ID(ON) | Output on leakage current | Switch state is on, VD = 1 V and 10 V, VS = floating |
–1 | 0.02 | 1 | nA | ||
TA = –40°C to +85°C | –10 | 10 | ||||||
TA = –40°C to +125°C | –50 | 50 | ||||||
LOGIC INPUT | ||||||||
VIH | Logic voltage high | 2.0 | V | |||||
VIL | Logic voltage low | 0.8 | V | |||||
ID | Input current | 0.1 | µA | |||||
SWITCH DYNAMIC CHARACTERISTICS(2) | ||||||||
tON | Enable turn-on time | VS = 8 V, RL = 300 Ω, CL= 35 pF |
90 | 145 | ns | |||
TA = –40°C to +85°C | 145 | |||||||
TA = –40°C to +125°C | 149 | |||||||
tOFF | Enable turn-off time | VS = 8 V, RL = 300 Ω, CL= 35 pF |
66 | 84 | ns | |||
TA = –40°C to +85°C | 94 | |||||||
TA = –40°C to +125°C | 102 | |||||||
tt | Transition time | VS = 8 V, CL= 35 pF | 107 | 147 | ns | |||
VS = 8 V, RL = 300 Ω, CL= 35 pF, |
TA = –40°C to +85°C | 153 | ||||||
VS = 8 V, RL = 300 Ω, CL= 35 pF, |
TA = –40°C to +125°C | 155 | ||||||
tBBM | Break-before-make time delay | VS = 8 V, RL = 300 Ω, CL= 35 pF, TA = –40°C to +125°C | 30 | 54 | ns | |||
QJ | Charge injection | CL = 1 nF, RS = 0 Ω | VS = 6 V | TSSOP package | 0.12 | pC | ||
SOIC package | 0.38 | |||||||
VS = 0 V to 12 V | TSSOP | ±0.17 | ||||||
SOIC package | ±0.48 | |||||||
Off-isolation | RL = 50 Ω, VS = 1 VRMS, f = 1 MHz |
Nonadjacent channel to D, DA, DB | TSSOP package | –97 | dB | |||
SOIC package | –94 | |||||||
Adjacent channel to D, DA, DB | TSSOP package | –94 | ||||||
SOIC package | –88 | |||||||
Channel-to-channel crosstalk | RL = 50 Ω, VS = 1 VRMS, f = 1 MHz |
Nonadjacent channels | TSSOP package | –100 | dB | |||
SOIC package | –99 | |||||||
Adjacent channels | TSSOP | -88 | ||||||
SOIC package | -83 | |||||||
CS(OFF) | Input off-capacitance | f = 1 MHz, VS = 6 V | 2.4 | 3.4 | pF | |||
CD(OFF) | Output off-capacitance | f = 1 MHz, VS = 6 V | MUX506 | 14 | 15.4 | pF | ||
MUX507 | 7.8 | 9.1 | ||||||
CS(ON), CD(ON) | Output on-capacitance | f = 1 MHz, VS = 6 V | MUX506 | 16.2 | 18 | pF | ||
MUX507 | 9.9 | 11.6 | ||||||
POWER SUPPLY | ||||||||
VDD supply current | All VA = 0 V or 3.3 V, VS= 0 V, VEN = 3.3 V |
41 | 59 | µA | ||||
TA = –40°C to +85°C | 62 | |||||||
TA = –40°C to +125°C | 83 | |||||||
VSS supply current | All VA = 0 V or 3.3 V, VS = 0 V, VEN = 3.3 V |
22 | 34 | µA | ||||
TA = –40°C to +85°C | 37 | |||||||
TA = –40°C to +125°C | 57 |
VDD = 24 V, VSS = 0 V |
VDD = 15 V, VSS = –15 V |
MUX506, source-to-drain |
Drain-to-source |
MUX506, VDD = 15 V, VSS = –15 V |
MUX506, VDD = 30 V, VSS = 0 V |
MUX506, VDD = 12 V, VSS = 0 V |
VDD = 15 V, VSS = –15 V |
VDD = 12 V, VSS = 0 V |
VDD = 12 V, VSS = –12 V |
VDD = 12 V, VSS = 0 V |
MUX507, source-to-drain |
MUX507, VDD = 15 V, VSS = –15 V |
MUX507, VDD = 30 V, VSS = 0 V |
MUX507, VDD = 12 V, VSS = 0 V |