SLFS023H April   1978  – December 2024 NA556 , NE556 , SA556 , SE556

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Monostable Operation
      2. 6.3.2 Astable Operation
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Pulse-Width Modulation
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Pulse-Position Modulation
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Application Curves
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|14
  • DB|14
  • N|14
  • NS|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) NA556, NE556 SE556 NA556, NE556, SA556 NE556 UNIT
D
(SOIC)		 J
(CDIP)		 N
(PDIP)		 NS
(SOP)
14 PINS 14 PINS 14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 91.4 86.1 73.4 89.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.7 38.8 51.7 47.3 °C/W
RθJB Junction-to-board thermal resistance 49.6 73.5 47.6 52.9 °C/W
ψJT Junction-to-top characterization parameter 12.3 32.4 29.5 11.3 °C/W
ψJB Junction-to-board characterization parameter 49.1 68.7 47.0 52.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 20.1 N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application report.