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  • OPA161x SoundPlus High-Performance, Bipolar-Input Audio Operational Amplifiers

    • SBOS450C July   2009  – August 2014 OPA1611 , OPA1612

      PRODUCTION DATA.  

  • CONTENTS
  • SEARCH
  • OPA161x SoundPlus High-Performance, Bipolar-Input Audio Operational Amplifiers
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics: VS = ±2.25 V to ±18 V
    5. 6.5 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Dissipation
      2. 7.3.2 Electrical Overstress
      3. 7.3.3 Operating Voltage
      4. 7.3.4 Input Protection
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Noise Performance
      1. 8.2.1 Detailed Design Procedure
      2. 8.2.2 Application Curve
      3. 8.2.3 Basic Noise Calculations
    3. 8.3 Total Harmonic Distortion Measurements
    4. 8.4 Capacitive Loads
    5. 8.5 Application Circuit
  9. 9 Power-Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
  13. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • D|8
    • MSOI002K
  • DRG|8
    • MPDS151B
Thermal pad, mechanical data (Package|Pins)
  • DRG|8
    • QFND084H
Orderable Information
  • sbos450c_oa
  • sbos450c_pm
search No matches found.
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    • Full reading width
    • Comfortable reading width
    • Expanded reading width
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DATA SHEET

OPA161x SoundPlus High-Performance, Bipolar-Input Audio Operational Amplifiers

1 Features

  • Superior Sound Quality
  • Ultralow Noise: 1.1 nV/√Hz at 1 kHz
  • Ultralow Distortion:
    0.000015% at 1 kHz
  • High Slew Rate: 27 V/μs
  • Wide Bandwidth: 40 MHz (G = +1)
  • High Open-Loop Gain: 130 dB
  • Unity Gain Stable
  • Low Quiescent Current:
    3.6 mA per Channel
  • Rail-to-Rail Output
  • Wide Supply Range: ±2.25 V to ±18 V
  • Single and Dual Versions Available

2 Applications

  • Professional Audio Equipment
  • Microphone Preamplifiers
  • Analog and Digital Mixing Consoles
  • Broadcast Studio Equipment
  • Audio Test And Measurement
  • High-End A/V Receivers

3 Description

The OPA1611 (single) and OPA1612 (dual) bipolar-input operational amplifiers achieve very low
1.1-nV/√Hz noise density with an ultralow distortion of 0.000015% at 1 kHz. The OPA1611 and OPA1612 offer rail-to-rail output swing to within 600 mV with a 2-kΩ load, which increases headroom and maximizes dynamic range. These devices also have a high output drive capability of ±30 mA.

These devices operate over a very wide supply range of ±2.25 V to ±18 V, on only 3.6 mA of supply current per channel. The OPA1611 and OPA1612 op amps are unity-gain stable and provide excellent dynamic behavior over a wide range of load conditions.

The dual version features completely independent circuitry for lowest crosstalk and freedom from interactions between channels, even when overdriven or overloaded.

Both the OPA1611 and OPA1612 are available in SOIC-8 packages and the OPA1612 is available in SON-8. These devices are specified from –40°C to +85°C.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
OPA1611 SOIC (8) 4.90 mm × 3.91 mm
OPA1612 SOIC (8) 4.90 mm × 3.91 mm
SON (8) 3.00 mm × 3.00 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

THD+N Ratio vs Output Amplitude

tc_thdn_vout_amp_bos450.gif

Functional Block Diagram

pg1_fbd_bos450.gif

4 Revision History

Changes from B Revision (July 2011) to C Revision

  • Changed format to meet latest data sheet standards; added new sections, and moved existing sectionsGo
  • Added SON-8 (DRG) package to data sheetGo
  • Changed SO to SOIC throughout document to match industry standard termGo
  • Added front-page curveGo
  • Added title to block diagramGo
  • Deleted Package Information table; see package option addendumGo

Changes from A Revision (August 2009) to B Revision

  • Revised Features list itemsGo
  • Updated front-page figureGo
  • Added max specification for input voltage noise density at f = 1kHz Go
  • Corrected typo in footnote 1 for Electrical CharacteristicsGo
  • Revised Figure 4Go
  • Updated Figure 7Go
  • Changed Figure 9Go
  • Revised Figure 11Go
  • Corrected typo in Figure 15Go
  • Updated Figure 29Go
  • Revised fourth paragraph of Electrincal Overstress sectionGo
  • Revised table in Figure 34Go

5 Pin Configuration and Functions

D Package
OPA1611, SOIC-8
(Top View)
po_1611so_bos450.gif
D Package
OPA1612, SOIC-8
(Top View)
po_1612so_bos450.gif
DRG Package
OPA1612, SON-8
(Top View)
po_2211dfn_bos377.gif
1. NC denotes no internal connection. Pin can be left floating or connected to any voltage between (V–) and (V+).
2. Exposed thermal die pad on underside; connect thermal die pad to V–. Soldering the thermal pad improves heat dissipation and provides specified performance.

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
D (OPA1611) D (OPA1612) DRG (OPA1612)
–IN 2 — — I Inverting input
+IN 3 — — I Noninverting input
–IN A — 2 2 I Inverting input, channel A
+IN A — 3 3 I Noninverting input, channel A
–IN B — 6 6 I Inverting input, channel B
+IN B — 5 5 I Noninverting input, channel B
NC 1, 5, 8 — — — No internal connection
OUT 6 — — O Output
OUT A — 1 1 O Output, channel A
OUT B — 7 7 O Output, channel B
V– 4 4 4 — Negative (lowest) power supply
V+ 7 8 8 — Positive (highest) power supply

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage VS = (V+) – (V–) 40 V
Input voltage (V–) – 0.5 (V+) + 0.5 V
Input current (all pins except power-supply pins) ±10 mA
Output short-circuit(2) Continuous
Operating temperature (TA) –55 +125 °C
Junction temperature (TJ) 200 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Short-circuit to VS / 2 (ground in symmetrical dual supply setups), one amplifier per package.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 +150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –3000 3000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –1000 1000
Machine model (MM) –200 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage (V+ – V–) 4.5 (±2.25) 36 (±18) V
Specified temperature –40 +85 °C

6.4 Electrical Characteristics: VS = ±2.25 V to ±18 V

At TA = +25°C and RL = 2 kΩ, unless otherwise noted. VCM = VOUT = midsupply, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AUDIO PERFORMANCE
THD+N Total harmonic distortion + noise G = +1, f = 1 kHz, VO = 3 VRMS 0.000015%
–136 dB
IMD Intermodulation distortion SMPTE/DIN two-tone, 4:1 (60 Hz and 7 kHz),
G = +1, VO = 3 VRMS		 0.000015%
–136 dB
DIM 30 (3-kHz square wave and 15-kHz sine wave), G = +1, VO = 3 VRMS 0.000012%
–138 dB
CCIF twin-tone (19 kHz and 20 kHz), G = +1,
VO = 3 VRMS		 0.000008%
–142 dB
FREQUENCY RESPONSE
GBW Gain-bandwidth product G = 100 80 MHz
G = 1 40 MHz
SR Slew rate G = –1 27 V/μs
Full-power bandwidth(1) VO = 1 VPP 4 MHz
Overload recovery time G = –10 500 ns
Channel separation (dual) f = 1 kHz –130 dB
NOISE
Input voltage noise f = 20 Hz to 20 kHz 1.2 μVPP
en Input voltage noise density(2) f = 10 Hz 2 nV/√Hz
f = 100 Hz 1.5 nV/√Hz
f = 1 kHz 1.1 1.5 nV/√Hz
In Input current noise density f = 10 Hz 3 pA/√Hz
f = 1 kHz 1.7 pA/√Hz
OFFSET VOLTAGE
VOS Input offset voltage VS = ±15 V ±100 ±500 μV
dVOS/dT VOS over temperature(2) TA = –40°C to +85°C 1 4 μV/°C
PSRR Power-supply rejection ratio VS = ±2.25 V to ±18 V 0.1 1 μV/V
INPUT BIAS CURRENT
IB Input bias current VCM = 0 V ±60 ±250 nA
VCM = 0 V, DRG package only ±60 ±300 nA
IB over temperature(2) TA = –40°C to +85°C 350 nA
IOS Input offset current VCM = 0 V ±25 ±175 nA
INPUT VOLTAGE RANGE
VCM Common-mode voltage range (V–) + 2 (V+) – 2 V
CMRR Common-mode rejection ratio (V–) + 2 V ≤ VCM ≤ (V+) – 2 V 110 120 dB
INPUT IMPEDANCE
Differential 20k || 8 Ω || pF
Common-mode 109 || 2 Ω || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain (V–) + 0.2 V ≤ VO ≤ (V+) – 0.2 V, RL = 10 kΩ 114 130 dB
(V–) + 0.6 V ≤ VO ≤ (V+) – 0.6 V, RL = 2 kΩ 110 114 dB
OUTPUT
VOUT Voltage output RL = 10 kΩ, AOL ≥ 114 dB (V–) + 0.2 (V+) – 0.2 V
RL = 2 kΩ, AOL ≥ 110 dB (V–) + 0.6 (V+) – 0.6 V
IOUT Output current See Figure 27 mA
ZO Open-loop output impedance See Figure 28 Ω
ISC Short-circuit current +55 mA
–62 mA
CLOAD Capacitive load drive See Typical Characteristics pF
POWER SUPPLY
VS Specified voltage ±2.25 ±18 V
IQ Quiescent current (per channel) IOUT = 0 A 3.6 4.5 mA
IQ over Temperature(2) TA = –40°C to +85°C 5.5 mA
TEMPERATURE RANGE
Specified range –40 +85 °C
Operating range –55 +125 °C
θJA Thermal resistance, SOIC-8 150 °C/W
(1) Full-power bandwidth = SR / (2π × VP), where SR = slew rate.
(2) Specified by design and characterization.

6.5 Typical Characteristics

At TA = +25°C, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
tc_v_curr_dens_freq_bos450.gif
Figure 1. Input Voltage Noise Density and Input Current Noise Density vs Frequency
tc_vnoise_spec_dens_rs_bos450.gif
Figure 3. Voltage Noise vs Source Resistance
tc_gain_phase_fqcy_bos450.gif
Figure 5. Gain and Phase vs Frequency
tc_thdn_fqcy_01_bos450.gif
Figure 7. THD+N Ratio vs Frequency
tc_thdn_fqcy_03_bos450.gif
Figure 9. THD+N Ratio vs Frequency
tc_thdn_vout_amp_bos450.gif
Figure 11. THD+N Ratio vs Output Amplitude
tc_chan_sep_fqcy_bos450.gif
Figure 13. Channel Separation vs Frequency
tc_sm_signal_step_g1_bos450.gif
Figure 15. Small-Signal Step Response (100 mV)
tc_lg_signal_step_g1_bos450.gif
Figure 17. Large-Signal Step Response
tc_sm_sig_osht_cload_g1_bos450.gif
Figure 19. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
tc_aol_temp_bos450.gif
Figure 21. Open-Loop Gain vs Temperature
tc_ib_ios_vcm_bos450.gif
Figure 23. IB and IOS vs Common-Mode Voltage
tc_iq_vsup_bos450.gif
Figure 25. Quiescent Current vs Supply Voltage
tc_vout_iout_bos450.gif
Figure 27. Output Voltage vs Output Current
tc_noise_bos450.gif
Figure 2. 0.1-Hz to 10-Hz Noise
tc_vout_max_freq_bos450.gif
Figure 4. Maximum Output Voltage vs Frequency
tc_closed_lp_gain_fqcy_bos450.gif
Figure 6. Closed-Loop Gain vs Frequency
tc_thdn_fqcy_02_bos450.gif
Figure 8. THD+N Ratio vs Frequency
tc_thdn_fqcy_04_bos450.gif
Figure 10. THD+N Ratio vs Frequency
tc_imd_amp_bos450.gif
Figure 12. Intermodulation Distortion vs Output Amplitude
tc_cmrr_psrr_freq_bos450.gif
Figure 14. CMRR and PSRR vs Frequency
(Referred to Input)
tc_sm_signal_step_g-1_bos450.gif
Figure 16. Small-Signal Step Response (100 mV)
tc_lg_signal_step_g-1_bos450.gif
Figure 18. Large-Signal Step Response
tc_sm_sig_osht_cload_g-1_bos450.gif
Figure 20. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
tc_ib_ios_temp_bos450.gif
Figure 22. IB and IOS vs Temperature
tc_iq_temp_bos450.gif
Figure 24. Quiescent Current vs Temperature
tc_isc_temp_bos450.gif
Figure 26. Short-Circuit Current vs Temperature
tc_oloop-frq_bos450.gif
Figure 28. Open-Loop Output Impedance vs Frequency

 
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