SBOS861A June   2017  – June 2018 OPA180-Q1 , OPA2180-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Low Noise (Peak-to-Peak Noise = 250 nV)
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions: OPA180-Q1
    2.     Pin Functions: OPA2180-Q1
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: OPA180-Q1
    5. 7.5 Thermal Information: OPA2180-Q1
    6. 7.6 Electrical Characteristics: VS = ±2 V to ±18 V (VS = 4 V to 36 V)
    7. 7.7 Typical Characteristics: Table of Graphs
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Characteristics
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Phase-Reversal Protection
      4. 8.3.4 Capacitive Load and Stability
      5. 8.3.5 Electrical Overstress
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Bipolar ±10-V Analog Output from a Unipolar Voltage Output DAC
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Component Selection
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Discrete INA + Attenuation
      3. 9.2.3 RTD Amplifier
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Thermal Information: OPA2180-Q1

THERMAL METRIC(1) OPA2180-Q1 UNIT
DGK (VSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 159.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 37.4 °C/W
RθJB Junction-to-board thermal resistance 48.5 °C/W
ψJT Junction-to-top characterization parameter 1.2 °C/W
ψJB Junction-to-board characterization parameter 77.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.