SBOS955 February   2019 OPA2356-EP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Output Drive
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Transimpedance Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 8.2.1.2.2 OPA2356-EP Design Procedure
            1. 8.2.1.2.2.1 Optimizing the Transimpedance Circuit
        3. 8.2.1.3 Application Curve
      2. 8.2.2 High-Impedance Sensor Interface
      3. 8.2.3 Driving ADCs
      4. 8.2.4 Active Filter
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.1 Transimpedance Amplifier

Wide gain bandwidth, low input bias current, low input voltage, and current noise make the OPA2356-EP a preferred wideband photodiode transimpedance amplifier. Low-voltage noise is important because photodiode capacitance causes the effective noise gain of the circuit to increase at high frequency.

The key elements to a transimpedance design, as shown in Figure 30, are the expected diode capacitance (C(D)), which must include the parasitic input common-mode and differential-mode input capacitance (4 pF + 5 pF), the desired transimpedance gain (R(FB)), and the gain-bandwidth (GBW) for the OPA2356-EP (20 MHz). With these three variables set, the feedback capacitor value (C(FB)) is set to control the frequency response. C(FB) includes the stray capacitance of R(FB), which is 0.2 pF for a typical surface-mount resistor.

OPA2356-EP ai_trans_amp_dual_sbos212.gif
1. C(FB) is optional to prevent gain peaking. C(FB) includes the stray capacitance of R(FB).
Figure 30. Dual-Supply Transimpedance Amplifier