SBOSAB2A february   2023  – july 2023 OPA2863-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±5 V
    6. 7.6 Electrical Characteristics: VS = 3 V
    7. 7.7 Typical Characteristics: VS = ±5 V
    8. 7.8 Typical Characteristics: VS = 3 V
    9. 7.9 Typical Characteristics: VS = 3 V to 10 V
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stage
      2. 8.3.2 Output Stage
        1. 8.3.2.1 Overload Power Limit
      3. 8.3.3 ESD Protection
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Low-Side Current Sensing
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Front-End Gain and Filtering
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) OPA2863-Q1 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 120.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.3 °C/W
RθJB Junction-to-board thermal resistance 63.2 °C/W
ΨJT Junction-to-top characterization parameter 17.2 °C/W
YJB Junction-to-board characterization parameter 62.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.