SBOS279F September 2003 – September 2016 OPA2373 , OPA2374 , OPA373 , OPA374 , OPA4374
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | Supply | 7 | V | |
Signal input pin(2) | −0.5 | (V+) + 0.5 | ||
Current | Signal input pin(2) | –10 | 10 | mA |
Output short-circuit(3) | Continuous | |||
Temperature | Operating, TA | –55 | 150 | °C |
Junction, TJ | 150 | |||
Storage, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±3000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | ±1.35 (2.7) | ±2.75 (5.5) | V | |
TA | Operating temperature | –40 | 125 | °C |
THERMAL METRIC(1) | OPA373 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DBV (SOT-23) | |||
8 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 128.4 | 184.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 76.7 | 146.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 68.8 | 36.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 27.9 | 33.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 68.3 | 35.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | — | °C/W |
THERMAL METRIC(1) | OPA374 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DBV (SOT-23) | |||
8 PINS | 5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 125.1 | 220.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 71.7 | 129 | °C/W |
RθJB | Junction-to-board thermal resistance | 65.5 | 46.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 26.2 | 21 | °C/W |
ψJB | Junction-to-board characterization parameter | 65 | 45.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | — | °C/W |
THERMAL METRIC(1) | OPA2373 | UNIT | ||
---|---|---|---|---|
DGS (VSON) | DRC (VSSOP) | |||
10 PINS | 10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 170.6 | 56.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 59.8 | 76.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 91 | 30.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 10.4 | 3.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 89.6 | 30.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 11.4 | °C/W |
THERMAL METRIC(1) | OPA2374 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DCN (SOT-23) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 117.8 | 171.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 63.1 | 73.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 58.4 | 106.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 19.3 | 15.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 57.9 | 105.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | — | °C/W |
THERMAL METRIC(1) | OPA4374 | UNIT | ||
---|---|---|---|---|
D (SOIC) | PW (TSSOP) | |||
14 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 86.5 | 112.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 45 | 34.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 41.1 | 57.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 12.3 | 2.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 40.8 | 56.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | — | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | |||||||
VOS | Input offset voltage | VS = 5 V | 1 | 5 | mV | ||
Input offset voltage versus temperature |
TA = –40°C to 125°C | 6.5 | mV | ||||
dVOS/dT | Input offset voltage versus drift |
TA = –40°C to +125°C | 3 | µV/°C | |||
PSRR | Input offset voltage versus power supply |
VS = 2.7 V to 5.5 V, VCM < (V+) – 2 V |
TA = 25°C | 25 | 100 | µV/V | |
TA = –40°C to 125°C | 150 | ||||||
Channel separation, DC | 0.4 | µV/V | |||||
At f = 1 kHz | 128 | dB | |||||
INPUT VOLTAGE | |||||||
VCM | Common-mode voltage range | (V–) – 0.2 | (V+) + 0.2 | V | |||
CMRR | Common-mode rejection ratio | (V–) – 0.2 V < VCM < (V+) – 2 V | TA = 25°C | 80 | 90 | dB | |
TA = –40°C to 125°C | 70 | ||||||
VS = 5.5 V, (V–) – 0.2 V < VCM < (V+) + 0.2 V |
TA = 25°C | 66 | dB | ||||
TA = –40°C to 125°C | 60 | dB | |||||
INPUT BIAS CURRENT | |||||||
IB | Input bias current | ±0.5 | ±10 | pA | |||
IOS | Input offset current | ±0.5 | ±10 | pA | |||
INPUT IMPEDANCE | |||||||
Differential | 1013 || 3 | Ω || pF | |||||
Common-mode | 1013 || 6 | Ω || pF | |||||
NOISE | |||||||
Input voltage noise | VCM < (V+) – 2 V, f = 0.1 Hz to 10 Hz | 10 | µVPP | ||||
en | Input voltage noise density | VCM < (V+) – 2 V, f = 10 kHz | 15 | nV/√Hz | |||
in | Input current noise density | VCM < (V+) – 2 V, f = 10 kHz | 4 | fA/√Hz | |||
OPEN-LOOP GAIN | |||||||
AOL | Open-loop voltage gain | VS = 5 V, RL = 100 kΩ, 0.025 V < VO < 4.975 V |
TA = 25°C | 94 | 110 | dB | |
TA = –40°C to 125°C | 80 | ||||||
VS = 5 V, RL = 5 kΩ, 0.125 V < VO < 4.875 V |
TA = 25°C | 94 | 106 | dB | |||
TA = –40°C to 125°C | 80 | ||||||
OUTPUT | |||||||
Voltage output swing from rail | RL = 100 kΩ | TA = 25°C | 18 | 25 | mV | ||
TA = –40°C to 125°C | 25 | mV | |||||
RL = 5 kΩ | TA = 25°C | 100 | 125 | mV | |||
TA = –40°C to 125°C | 125 | mV | |||||
ISC | Short-circuit current | See Typical Characteristics | |||||
CLOAD | Capacitive load drive | See Typical Characteristics | |||||
RO | Open-loop output impedance | f = 1 MHz, IO = 0 mA | 220 | Ω | |||
FREQUENCY RESPONSE | |||||||
GBW | Gain-bandwidth product | CL = 100 pF | 6.5 | MHz | |||
SR | Slew rate | CL = 100 pF, G = +1 | 5 | V/µs | |||
tS | Settling time | 0.1%, CL = 100 pF, VS = 5 V, 2-V step, G = +1 |
1 | µs | |||
0.01%, CL = 100 pF, VS = 5 V, 2-V step, G = +1 |
1.5 | µs | |||||
Overload recovery time | CL = 100 pF, VIN ● Gain > VS | 0.3 | µs | ||||
THD+N | Total harmonic distortion + noise | CL = 100 pF, VS = 5 V, VO = 3 VPP, G = +1, f = 1 kHz |
0.0013% | ||||
ENABLE OR SHUTDOWN | |||||||
tOFF | Turnoff time | 3 | µs | ||||
tON | Turnon time | 12 | µs | ||||
VL | Logic low threshold | Shutdown | V– | (V–) + 0.8 | V | ||
VH | Logic high threshold | Amplifier is active | (V–) + 2 | V+ | V | ||
Input bias current of Enable pin | 0.2 | µA | |||||
IQ(sd) | Quiescent current at shutdown (per amplifier) |
< 0.5 | 1 | µA | |||
POWER SUPPLY | |||||||
VS | Specified voltage range | 2.7 | 5.5 | V | |||
Operating voltage range | 2.3 to 5.5 | V | |||||
IQ | Quiescent current (per amplifier) |
IO = 0 mA | TA = 25°C | 585 | 750 | µA | |
TA = –40°C to 125°C | 800 | µA | |||||
TEMPERATURE | |||||||
Specified range | –40 | 125 | °C | ||||
TA | Operating range | –55 | 150 | °C | |||
Tstg | Storage range | –65 | 150 | °C |