SBOS809A
November 2016 – June 2017
OPA2172-Q1
,
OPA4172-Q1
PRODUCTION DATA.
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
EMI Rejection
8.3.2
Phase-Reversal Protection
8.3.3
Capacitive Load and Stability
8.4
Device Functional Modes
8.4.1
Common-Mode Voltage Range
8.4.2
Electrical Overstress
8.4.3
Overload Recovery
9
Applications and Implementation
9.1
Application Information
9.2
Typical Applications
9.2.1
Capacitive Load Drive Solution Using an Isolation Resistor
9.2.1.1
Design Requirements
9.2.1.2
Detailed Design Procedure
9.2.1.3
Application Curve
9.2.2
Bidirectional Current Source
9.2.3
JFET-Input Low-Noise Amplifier
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Device Support
12.1.1
Development Support
12.1.1.1
TINA-TI (Free Software Download)
12.2
Documentation Support
12.2.1
Related Documentation
12.3
Related Links
12.4
Receiving Notification of Documentation Updates
12.5
Community Resources
12.6
Trademarks
12.7
Electrostatic Discharge Caution
12.8
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
PW|14
MPDS360A
Thermal pad, mechanical data (Package|Pins)
Orderable Information
sbos809a_oa
sbos809a_pm
5
Device Comparison Table
Table 1.
Device Comparison
DEVICE
PACKAGE
OPA2172-Q1 (dual)
VSSOP-8
OPA4172-Q1 (quad)
TSSOP-14
Table 2.
Device Family Comparison
DEVICE
QUIESCENT CURRENT
(I
Q
)
GAIN BANDWIDTH PRODUCT
(GBP)
VOLTAGE NOISE DENSITY
(e
n
)
OPAx172
1600 µA
10 MHz
7 nV/√
Hz
OPAx171
475 µA
3.0 MHz
14 nV/√
Hz
OPAx170
110 µA
1.2 MHz
19 nV/√
Hz