SBOS196I December 2001 – February 2024 OPA656
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The OPA656 is built using a very high-speed complementary bipolar process. The internal junction breakdown voltages are relatively low for these very small geometry devices. These breakdowns are reflected in the table of Absolute Maximum Ratings. Figure 7-1 shows how all device pins are protected with internal ESD protection diodes to the power supplies.
Along with ESD protection, these diodes provide moderate protection to input overdrive voltages greater than the supplies. The protection diodes typically support 10 mA of continuous current. Where higher currents are possible (for example, in systems with ±12‑V supply parts driving into the OPA656), add current limiting series resistors into the two inputs. Keep these resistor values as low as possible because high values degrade both noise performance and frequency response.