SBOS196I December   2001  – February 2024 OPA656

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Electrical Characteristics: High Grade DC Specifications
    7. 6.7 Typical Characteristics: VS = ±5 V
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Feature Description
      1. 7.2.1 Input and ESD Protection
    3. 7.3 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Wideband, Noninverting Operation
      2. 8.1.2 Wideband, Inverting Gain Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Demonstration Fixtures
        2. 8.4.1.2 Thermal Considerations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The OPA656 combines a wideband, unity-gain stable, voltage-feedback operational amplifier with a low-noise junction gate field-effect transistor (JFET) input stage to offer an ultra high dynamic-range amplifier for transimpedance applications and high-speed data acquisition front-ends. Extremely low dc errors give good precision in both optical applications and test and measurement.

The OPA656 features ultra-low input voltage noise (6nV/√Hz) to achieve a very low integrated noise in transimpedance applications. The combination of high input impedance and low input voltage noise makes the OPA656 an excellent wideband transimpedance amplifier in optical test and communication equipment, as well as medical and scientific instrumentation.

The OPA656 features a wide gain bandwidth of 230MHz. The large-signal bandwidth of 150MHz and low distortion make the OPA656 an excellent choice in high-speed digitizer front-ends, active probes, and other test and measurement front ends.

The OPA656 is specified to operate over the industrial temperature range of –40°C to +85°C.
Package Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2)
OPA656 D (SOIC, 8) 4.9mm × 6mm
DBV (SOT-23, 5) 2.9mm × 2.8mm
(1) For more information, see Section 11.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.
GUID-20230831-SS0I-X8HH-P0QX-DQRHLGJVLLXG-low.svgWideband Photodiode Transimpedance Amplifier
GUID-20230831-SS0I-DZXL-X0GC-CZRT9CTH4JF4-low.svg100‑kΩ Transimpedance Bandwidth