SBOS342C December   2008  – November 2015 OPA659

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Related Operational Amplifier Products
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Feature Description
      1. 8.2.1 Input and ESD Protection
    3. 8.3 Device Functional Modes
      1. 8.3.1 Split-Supply Operation (±3.5 V to ±6.5 V)
      2. 8.3.2 Single-Supply Operation (7 V to 13 V)
  9. Application Information
    1. 9.1 Application Information
      1. 9.1.1 Wideband, Noninverting Operation
      2. 9.1.2 Wideband, Inverting Gain Operation
      3. 9.1.3 Operating Suggestions
        1. 9.1.3.1 Setting Resistor Values To Minimize Noise
        2. 9.1.3.2 Frequency Response Control
        3. 9.1.3.3 Driving Capacitive Loads
        4. 9.1.3.4 Distortion Performance
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Pad Information
    4. 11.4 Schematic and PCB Layout
    5. 11.5 Evaluation Module
      1. 11.5.1 Bill of Materials
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Layout

11.1 Layout Guidelines

Achieving optimum performance with a high-frequency amplifier such as the OPA659 requires careful attention to PCB layout parasitics and external component types. Recommendations that can optimize device performance include the following

  1. Minimize parasitic capacitance to any AC ground for all of the signal input/output (I/O) pins. Parasitic capacitance on the output and inverting input pins can cause instability: on the noninverting input, it can react with the source impedance to cause unintentional band-limiting. To reduce unwanted capacitance, a window around the signal I/O pins should be opened in all of the ground and power planes around those pins. Otherwise, ground and power planes should be unbroken elsewhere on the board.
  2. Minimize the distance (less than 0.25 inches, or 6.35 mm) from the power-supply pins to the high-frequency, 0.1-μF decoupling capacitors. At the device pins, the ground and power plane layout should not be in close proximity to the signal I/O pins. Use a single point ground, located away from the input pins, for the positive and negative supply high-frequency, 0.1-μF decoupling capacitors. Avoid narrow power and ground traces to minimize inductance between the pins and the decoupling capacitors. The power-supply connections should always be decoupled with these capacitors. Larger (2.2 μF to 10 μF) decoupling capacitors, effective at lower frequencies, should also be used on the supply pins. These larger capacitors may be placed somewhat farther from the device and may be shared among several devices in the same area of the PCB.
  3. Careful selection and placement of external components preserves the high-frequency performance of the OPA659. Resistors should be a very low reactance type. Surface-mount resistors work best and allow a tighter overall layout. Metal film and carbon composition, axially-leaded resistors can also provide good high-frequency performance. Again, keep the leads and PCB trace length as short as possible. Never use wirewound-type resistors in a high-frequency application. The inverting input pin is the most sensitive to parasitic capacitance; consequently, always position the feedback resistor as close to the negative input as possible. The output is also sensitive to parasitic capacitance; therefore, position a series output resistor (in this case, RISO) as close to the output pin as possible. Other network components, such as noninverting input termination resistors, should also be placed close to the package. Even with a low parasitic capacitance, excessively high resistor values can create significant time constants that can degrade device performance. Good axial metal film or surface-mount resistors have approximately 0.2 pF in shunt with the resistor. For resistor values greater than 1.5 kΩ, this parasitic capacitance can add a pole and/or zero below 500 MHz that can affect circuit operation. Keep resistor values as low as possible, consistent with load driving considerations. TI recommends keeping RF || RG less than 250 Ω. This low value ensures that the resistor noise terms remain low, and minimizes the effects of the parasitic capacitance. Transimpedance applications (for example, see Figure 39) can use the feedback resistor required by the application as long as the feedback compensation capacitor is set given consideration to all parasitic capacitance terms on the inverting node.
  4. Connections to other wideband devices on the board may be made with short direct traces or through onboard transmission lines. For short connections, consider the trace and the input to the next device as a lumped capacitive load. Relatively wide traces (50 mils to 100 mils, or 1.27 cm to 2.54 cm) should be used. Estimate the total capacitive load and set RISO from Figure 24. Low parasitic capacitive loads (less than 5 pF) may not need an RISO because the OPA659 is nominally compensated to operate with a 2-pF parasitic load. Higher parasitic capacitive loads without an RISO are allowed as the signal gain increases (increasing the unloaded phase margin). If a long trace is required, and the 6-dB signal loss intrinsic to a doubly-terminated transmission line is acceptable, implement a matched impedance transmission line using microstrip or stripline techniques (consult an ECL design handbook for microstrip and stripline layout techniques). A 50-Ω environment is normally not necessary onboard, and in fact a higher impedance environment improves distortion as shown in the distortion versus load plots. With a characteristic board trace impedance defined based on board material and trace dimensions, a matching series resistor into the trace from the output of the OPA659 is used as well as a terminating shunt resistor at the input of the destination device. Remember also that the terminating impedance is the parallel combination of the shunt resistor and the input impedance of the destination device: this total effective impedance should be set to match the trace impedance. If the 6-dB attenuation of a doubly-terminated transmission line is unacceptable, a long trace can be series-terminated at the source end only. Treat the trace as a capacitive load in this case, and set the series resistor value as shown in Figure 24. This configuration does not preserve signal integrity as well as a doubly-terminated line. If the input impedance of the destination device is low, there will be some signal attenuation as a result of the voltage divider formed by the series output into the terminating impedance.
  5. Socketing a high-speed part such as the OPA659 is not recommended. The additional lead length and pin-to-pin capacitance introduced by the socket can create an extremely troublesome parasitic network that can make it almost impossible to achieve a smooth, stable frequency response. Best results are obtained by soldering the OPA659 directly onto the board.
  6. The thermal slug on bottom of OPA659 DRB package must be tied to the most negative supply. The DRB package is a thermally-enhanced package. Best results are obtained by soldering the exposed metal tab on the bottom of the OPA659 DRB directly to a metal plane on the PCB that is connected to the most negative supply voltage of the operational amplifier. For general layout guidelines, refer to the EVM layout in the Schematic and PCB Layout section.

11.2 Layout Example

OPA659 Layout_sbos342.gif Figure 43. Layout Recommendation

11.3 Thermal Pad Information

The DRB package includes an exposed thermal pad for increased thermal performance. When using this package, TI recommends to distribute the negative supply as a power plane, and tie the thermal pad to this supply with multiple vias for proper power dissipation. For proper operation, the thermal pad must be tied to the most negative supply voltage. TI recommends using five evenly-spaced vias under the device as shown in the EVM layer views (see Figure 45). For more general data and detailed information about the exposed thermal pad, go to www.ti.com/thermal.

11.4 Schematic and PCB Layout

Figure 44 is the OPA659EVM schematic. Layers 1 through 4 of the PCB are shown in Figure 45. TI recommends following the layout of the external components near to the amplifier, ground plane construction, and power routing as closely as possible.

OPA659 schm_bos342.gif Figure 44. OPA659EVM Schematic
OPA659 ai_pcb_bos342.gif Figure 45. OPA659EVM Layers 1 Through 4

11.5 Evaluation Module

11.5.1 Bill of Materials

Table 6 lists the bill of material for the OPA659EVM as supplied from TI.

Table 6. OPA659EVM Parts List

ITEM DESCRIPTION SMD SIZE REFERENCE
DESIGNATOR
QUANTITY MANUFACTURER
PART NUMBER
1 Cap, 10 μF, Tantalum, 10%, 35V D C1, C2 2 (AVX) TAJ106K035R
2 Cap, 0.1 μF, Ceramic, X7R, 16V 0603 C3, C4 2 (AVX) 0603YC104KAT2A
3 Open 0603 R1, R2 2
4 Resistor, 0 Ω 0603 R4 1 (ROHM) MCR03EZPJ000
5 Resistor, 49.9 Ω, 1/10 W, 1% 0603 R3, R5 2 (ROHM) MCR03EZPFX49R9
6 Jack, Banana Receptance, 0.25 inch diameter hole J4, J5, J8 3 (SPC) 813
7 Connector, Edge, SMA PCB Jack J1, J2, J3 3 (JOHNSON) 142-0701-801
8 Test Point, Black TP1 1 (KEYSTONE) 5001
9 IC, OPA659 U1 1 (TI) OPA659DRB
10 Standoff, 4-40 HEX, 0.625 inch length 4 (KEYSTONE) 1808
11 Screw, Phillips, 4-40, 0.25 inch 4 SHR-0440-016-SN
12 Board, Printed Circuit 1 (TI) EDGE# 6506173
13 Bead, Ferrite, 3 A, 80 Ω 1206 FB1, FB2 2 (STEWARD) HI1206N800R-00