SBOS223H December   2001  – October 2024 OPA690

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics OPA690IDBV, VS = ±5 V
    6. 6.6  Electrical Characteristics OPA690IDBV, VS = 5 V
    7. 6.7  Electrical Characteristics OPA690ID, VS = ±5 V
    8. 6.8  Electrical Characteristics OPA690ID, VS = 5 V
    9. 6.9  Typical Characteristics: OPA690IDBV, VS = ±5V
    10. 6.10 Typical Characteristics: OPA690IDBV, VS = 5V
    11. 6.11 Typical Characteristics: OPA690ID, VS = ±5V
    12. 6.12 Typical Characteristics: OPA690ID, VS = 5V
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Wideband Voltage-Feedback Operation
      2. 7.3.2 Input and ESD Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Operation
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Bandwidth Versus Gain: Noninverting Operation
      2. 8.1.2 Inverting Amplifier Operation
      3. 8.1.3 Optimizing Resistor Values
      4. 8.1.4 Output Current and Voltage
      5. 8.1.5 Driving Capacitive Loads
      6. 8.1.6 Distortion Performance
      7. 8.1.7 Noise Performance
      8. 8.1.8 DC Accuracy and Offset Control
      9. 8.1.9 Thermal Analysis
    2. 8.2 Typical Applications
      1. 8.2.1 High-Performance DAC Transimpedance Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
      2. 8.2.2 Single-Supply Active Filters
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Application Curve
      3. 8.2.3 High-Power Line Driver
        1. 8.2.3.1 Design Requirements
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Macromodels and Applications Support
      2. 9.1.2 Demonstration Fixtures
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DBV|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Optimizing Resistor Values

Because the OPA690 is a unity-gain stable, voltage-feedback op amp, a wide range of resistor values can be used for the feedback and gain-setting resistors. The primary limits on these values are set by dynamic range (noise and distortion) and parasitic capacitance considerations. For a noninverting unity-gain follower application, make the feedback connection with a 25-Ω resistor, not a direct short. This connection isolates the inverting input capacitance from the output pin and improves the frequency response flatness. Usually, for G > 1 V/V applications, the feedback-resistor value must be between 200 Ω and 1.5 kΩ. For values less than 200 Ω, the feedback network presents additional output loading that can degrade the harmonic distortion performance of the OPA690.

A good practice is to target the parallel combination of RF and RG (see Figure 7-1) to be less than approximately 300 Ω. The combined impedance RF || RG interacts with the inverting input capacitance, placing an additional pole in the feedback network, and thus, a zero in the forward response. Assuming a 2-pF total parasitic on the inverting node, holding RF || RG < 300 Ω keeps this pole greater than 250 MHz. Alone, this constraint implies that the feedback resistor RF can increase to several kΩ at high gains. This result is acceptable as long as the pole formed by RF and any parasitic capacitance appearing in parallel is kept out of the frequency range of interest.