SBOS799E August   2019  – August 2024 OPA810

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: 10 V
    6. 6.6  Electrical Characteristics: 24 V
    7. 6.7  Electrical Characteristics: 5 V
    8. 6.8  Typical Characteristics: VS = 10 V
    9. 6.9  Typical Characteristics: VS = 24 V
    10. 6.10 Typical Characteristics: VS = 5 V
    11. 6.11 Typical Characteristics: ±2.375-V to ±12-V Split Supply
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 OPA810 Architecture
      2. 7.3.2 ESD Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Split-Supply Operation (±2.375 V to ±13.5 V)
      2. 7.4.2 Single-Supply Operation (4.75 V to 27 V)
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Amplifier Gain Configurations
      2. 8.1.2 Selection of Feedback Resistors
      3. 8.1.3 Noise Analysis and the Effect of Resistor Elements on Total Noise
    2. 8.2 Typical Applications
      1. 8.2.1 Transimpedance Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 High-Z Input Data Acquisition Front-End
      3. 8.2.3 Multichannel Sensor Interface
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Thermal Considerations
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DBV|5
  • DCK|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Typical Characteristics: ±2.375-V to ±12-V Split Supply

at VO = 2 VPP, RF = 1 kΩ, RL = 1 kΩ and TA ≈ 25°C (unless otherwise noted)

OPA810 Open-Loop Gain and Phase vs Frequency
Simulated with no output load
Figure 6-42 Open-Loop Gain and Phase vs Frequency
OPA810 Large-Signal Response vs Supply Voltage
See Figure 8-1, gain = 2 V/V
Figure 6-44 Large-Signal Response vs Supply Voltage
OPA810 Harmonic Distortion vs Frequency vs Supply Voltage
See Figure 8-2, gain = –1 V/V
Figure 6-46 Harmonic Distortion vs Frequency vs Supply Voltage
OPA810 Auxiliary Input Stage Voltage Noise Density vs Frequency
Measured then fit to ideal 1/f model
Figure 6-48 Auxiliary Input Stage Voltage Noise Density vs Frequency
OPA810 Common-Mode Rejection Ratio vs Frequency
VS = 10 V and 24 V
Figure 6-50 Common-Mode Rejection Ratio vs Frequency
OPA810 Power
                        Supply Rejection Ratio vs Frequency
Simulated curves, VS = 24 V
Figure 6-52 Power Supply Rejection Ratio vs Frequency
OPA810 Input
                        Bias Current vs Differential Input Voltage
Abs (VIN,Diff (max)) = VS when VS < 7 V
Figure 6-54 Input Bias Current vs Differential Input Voltage
OPA810 Input
                        Offset Voltage vs Ambient Temperature
32 units, SOIC package
Figure 6-56 Input Offset Voltage vs Ambient Temperature
OPA810 Input
                        Offset Voltage Distribution
27000 units, µ = 16 µV, σ = 63 µV, VS = 24 V
Figure 6-58 Input Offset Voltage Distribution
OPA810 Large-Signal Response vs Supply Voltage
See Figure 8-1, gain = 1 V/V, RF = 0 Ω
Figure 6-43 Large-Signal Response vs Supply Voltage
OPA810 Harmonic Distortion vs Frequency vs Supply Voltage
See Figure 8-1, gain = 2 V/V
Figure 6-45 Harmonic Distortion vs Frequency vs Supply Voltage
OPA810 Input
                        Voltage Noise Density vs Frequency
Measured then fit to ideal 1/f model
Figure 6-47 Input Voltage Noise Density vs Frequency
OPA810 Open-Loop Output Impedance vs Frequency
 
Figure 6-49 Open-Loop Output Impedance vs Frequency
OPA810 Power
                        Supply Rejection Ratio vs Frequency
VS = 5 V and 10 V
Figure 6-51 Power Supply Rejection Ratio vs Frequency
OPA810 Input
                        Bias Current vs Input Common-Mode Voltage
VS = ±12 V
Figure 6-53 Input Bias Current vs Input Common-Mode Voltage
OPA810 Quiescent Current vs Ambient Temperature
32 units, SOIC package, VS = ±5 V
Figure 6-55 Quiescent Current vs Ambient Temperature
OPA810 Quiescent Current Distribution
27000 units, µ = 3.82 mA, σ = 17 µA, VS = 24 V
Figure 6-57 Quiescent Current Distribution
OPA810 Input
                        Offset Voltage Drift Distribution
–40°C to +125°C fit, 32 units, µ = –0.15 µV/°C, σ = 2.5 µV/°C
Figure 6-59 Input Offset Voltage Drift Distribution