SBOS847A July   2022  – December 2022 OPA817

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±5 V
    6. 7.6 Typical Characteristics: VS = ±5 V
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input and ESD Protection
      2. 8.3.2 Feedback Pin
      3. 8.3.3 FET-Input Architecture with Wide Gain-Bandwidth Product
      4. 8.3.4 Device Functional Modes
        1. 8.3.4.1 Power-Down (PD) Pin
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Wideband, High-Input Impedance DAQ Front-End
    2. 9.2 Typical Applications
      1. 9.2.1 High Input Impedance, 200 MHz, Digitizer Front-End Amplifier Design
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Thermal Considerations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2 Design Requirements

Table 9-1 lists the design requirements for a High Input Impedance, 200 MHz, Digitizer Front-End Amplifier.

Table 9-1 Design Requirements
Specification Value
Input Impedance 1 MΩ / 50Ω
Input Range (1 MΩ / 50 Ω) 20 VPP / 2 VPP
Offset Drift 3.5 µV/°C maximum
Noise at Highest Resolution (50 Ω Input) 80 µVRMS