SBOS867C August   2017  – October 2023 OPA838

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = 5 V
    6. 7.6 Electrical Characteristics: VS = 3 V
    7. 7.7 Typical Characteristics: VS = 5 V
    8. 7.8 Typical Characteristics: VS = 3 V
    9. 7.9 Typical Characteristics: Over Supply Range
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Common-Mode Voltage Range
      2. 8.3.2 Output Voltage Range
      3. 8.3.3 Power-Down Operation
      4. 8.3.4 Trade-Offs in Selecting The Feedback Resistor Value
      5. 8.3.5 Driving Capacitive Loads
    4. 8.4 Device Functional Modes
      1. 8.4.1 Split-Supply Operation (±1.35 V to ±2.7 V)
      2. 8.4.2 Single-Supply Operation (2.7 V to 5.4 V)
      3. 8.4.3 Power Shutdown Operation
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Noninverting Amplifier
      2. 9.1.2 Inverting Amplifier
      3. 9.1.3 Output DC Error Calculations
      4. 9.1.4 Output Noise Calculations
    2. 9.2 Typical Applications
      1. 9.2.1 High-Gain Differential I/O Designs
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Transimpedance Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 TINA-TI™ Simulation Model Features
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12.   Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.6 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.